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    LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20120241770A1

    公开(公告)日：2012-09-27

    申请号：US13429623

    申请日：2012-03-26

    申请人： Jong Ho NA ,  Se Hwan Sim ,  Chong Cook Kim ,  Jae In Yoon ,  Jong Pil Jeong ,  Jung Hyun Hwang ,  Dong Han Yoo

    发明人： Jong Ho NA ,  Se Hwan Sim ,  Chong Cook Kim ,  Jae In Yoon ,  Jong Pil Jeong ,  Jung Hyun Hwang ,  Dong Han Yoo

    IPC分类号： H01L33/00

    CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/0002 ,  H01L2924/12032 ,  H01L2924/00 ,  H01L2924/00014

    摘要： Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.

    摘要翻译： 公开了一种发光器件，其制造方法，发光器件封装和照明系统。 发光器件包括第一导电半导体层，在第一导电层上包括阱层和阻挡层的有源层以及有源层上的第二导电半导体层。 阱层包括最靠近第一导电半导体层并且具有第一能带隙的第一阱层，最靠近第二导电半导体层的第三阱层并具有第三能带隙，以及插入在第一和第二阱层之间的第二阱层， 第三阱层并具有第二能带隙。 第三阱层的第三能带隙大于第二阱层的第二能带隙。

    Light emitting device, light emitting device package and illumination system
    6.
    发明授权
    Light emitting device, light emitting device package and illumination system 有权

    公开(公告)号：US10283673B2

    公开(公告)日：2019-05-07

    申请号：US14316326

    申请日：2014-06-26

    申请人： Oh Min Kwon ,  Jong Pil Jeong

    发明人： Oh Min Kwon ,  Jong Pil Jeong

    IPC分类号： H01L33/24 ,  H01L33/22 ,  H01L33/06

    摘要： A light emitting device is provided. The light emitting device includes a first semiconductor layer, an active layer including a plurality of well layers and a plurality of barrier layers on the first semiconductor layer, a second semiconductor layer on the active layer, and an electrode layer on the second semiconductor layer. A top surface of a first barrier layer adjacent to the second semiconductor layer includes an uneven surface and has a larger area than an area of a top surface of a second barrier layer, wherein the first barrier layer has a thickness thicker than a thickness of the second barrier layer.

    Light emitting device, light emitting device package and illumination system
    8.
    发明授权
    Light emitting device, light emitting device package and illumination system 有权
    发光装置，发光装置封装和照明系统

    公开(公告)号：US08796705B2

    公开(公告)日：2014-08-05

    申请号：US12977841

    申请日：2010-12-23

    申请人： Oh Min Kwon ,  Jong Pil Jeong

    发明人： Oh Min Kwon ,  Jong Pil Jeong

    IPC分类号： H01L33/00

    CPC分类号： H01L33/24 ,  H01L33/06 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A light emitting device is provided. The light emitting device includes a first conductive type semiconductor layer, an active layer including a plurality of well layers and a plurality of barrier layers on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. An upper surface of at least first barrier layer among the barrier layers includes an uneven surface. The first barrier layer is disposed more closely to the second conductive type semiconductor layer than to the first conductive type semiconductor layer.

    摘要翻译： 提供了一种发光器件。 发光器件包括第一导电类型半导体层，在第一导电类型半导体层上包括多个阱层的有源层和多个势垒层以及有源层上的第二导电型半导体层。 阻挡层中的至少第一阻挡层的上表面包括不平坦表面。 与第一导电型半导体层相比，第一阻挡层设置得更靠近第二导电类型半导体层。

    LIGHT EMITTING DEVICE
    10.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20130043457A1

    公开(公告)日：2013-02-21

    申请号：US13459635

    申请日：2012-04-30

    申请人： Dong Hun KANG ,  Sang Hyun Lee ,  Sung Yi Jung ,  Jong Pil Jeong

    发明人： Dong Hun KANG ,  Sang Hyun Lee ,  Sung Yi Jung ,  Jong Pil Jeong

    IPC分类号： H01L33/04

    CPC分类号： H01L33/06 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a first conductive semiconductor layer; a superlattice layer on the first conductive semiconductor layer; an active layer on the superlattice layer; and a second conductive semiconductor layer on the active layer. The superlattice layer comprises InxGa(1−x)N(0

    摘要翻译： 提供了发光器件，其制造方法，发光器件封装和照明系统。 发光器件包括：第一导电半导体层; 在第一导电半导体层上的超晶格层; 在超晶格层上的活性层; 以及在所述有源层上的第二导电半导体层。 超晶格层包括掺杂有n型掺杂剂的In x Ga（1-x）N（0