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公开(公告)号:US08748932B2
公开(公告)日:2014-06-10
申请号:US13358145
申请日:2012-01-25
申请人: Jong Pil Jeong , Jung Hyun Hwang , Chong Cook Kim , Sung Jin Son
发明人: Jong Pil Jeong , Jung Hyun Hwang , Chong Cook Kim , Sung Jin Son
IPC分类号: H01L33/00
CPC分类号: H01L33/145 , H01L33/025 , H01L33/04 , H01L33/10 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要: Provided are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type semiconductor layer, a light emitting layer over the first conductive type semiconductor layer, an electron blocking layer over the light emitting layer, and a second conductive type semiconductor layer over the electron blocking layer. The electron blocking layer comprises a pattern having a height difference.
摘要翻译: 提供了发光器件,制造发光器件的方法,发光器件封装和照明系统。 发光器件包括第一导电类型半导体层,第一导电类型半导体层上的发光层,发光层上的电子阻挡层,以及电子阻挡层上的第二导电类型半导体层。 电子阻挡层包括具有高度差的图案。
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公开(公告)号:US20130168711A1
公开(公告)日:2013-07-04
申请号:US13732694
申请日:2013-01-02
申请人: Jeong Pil JEONG , Jung Hyun HWANG , Chong Cook KIM
发明人: Jeong Pil JEONG , Jung Hyun HWANG , Chong Cook KIM
IPC分类号: H01L33/32
CPC分类号: H01L33/32 , F21K9/232 , F21Y2115/10 , H01L33/04 , H01L33/20 , H01L33/382 , H01L33/42 , H01L33/44 , H01L2224/48091 , H01L2924/0002 , H01L2924/00014 , H01L2924/00
摘要: Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer; and a nitride semiconductor layer having a refractive index less than a refractive index of the second conductive semiconductor layer on the second conductive semiconductor layer.
摘要翻译: 公开了一种发光器件,其制造方法,发光器件封装和照明系统。 发光装置包括:基板; 在所述基板上的第一导电半导体层; 在第一导电半导体层上的有源层; 第二导电半导体层; 以及氮化物半导体层,其折射率小于第二导电半导体层上的第二导电半导体层的折射率。
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公开(公告)号:US06987788B2
公开(公告)日:2006-01-17
申请号:US10617833
申请日:2003-07-14
申请人: Chong Cook Kim , Ki Won Moon
发明人: Chong Cook Kim , Ki Won Moon
IPC分类号: H01S5/00
CPC分类号: H01S5/2231 , H01S5/2031 , H01S5/3211 , H01S5/3213 , H01S5/32316 , H01S2301/18
摘要: A high power semiconductor laser device includes a semiconductor substrate, a lower clad layer formed on the semiconductor substrate, a lower guide layer formed on the lower clad layer, an active layer formed on the lower guide layer, an upper guide layer formed on the active layer, and an upper clad layer formed on the upper guide layer. The lower and upper clad layers have the same refractivity. The lower clad layer includes a high refractivity layer, which is spaced from the lower guide layer by a constant distance, and has a refractivity higher than that of the upper clad layer.
摘要翻译: 高功率半导体激光器件包括半导体衬底,形成在半导体衬底上的下覆盖层,形成在下覆盖层上的下引导层,形成在下引导层上的有源层,形成在活性层上的上引导层 层,以及形成在上引导层上的上覆层。 下层和上层包层具有相同的折射率。 下包覆层包括高折射率层,其与下引导层间隔一定距离,并且具有比上覆层更高的折射率。
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公开(公告)号:US20120187365A1
公开(公告)日:2012-07-26
申请号:US13358145
申请日:2012-01-25
申请人: Jong Pil JEONG , Jung Hyun HWANG , Chong Cook KIM , Sung Jin SON
发明人: Jong Pil JEONG , Jung Hyun HWANG , Chong Cook KIM , Sung Jin SON
IPC分类号: H01L33/04
CPC分类号: H01L33/145 , H01L33/025 , H01L33/04 , H01L33/10 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要: Provided are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type semiconductor layer, a light emitting layer over the first conductive type semiconductor layer, an electron blocking layer over the light emitting layer, and a second conductive type semiconductor layer over the electron blocking layer. The electron blocking layer comprises a pattern having a height difference.
摘要翻译: 提供了发光器件,制造发光器件的方法,发光器件封装和照明系统。 发光器件包括第一导电类型半导体层,第一导电类型半导体层上的发光层,发光层上的电子阻挡层,以及电子阻挡层上的第二导电类型半导体层。 电子阻挡层包括具有高度差的图案。
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公开(公告)号:US20120241770A1
公开(公告)日:2012-09-27
申请号:US13429623
申请日:2012-03-26
申请人: Jong Ho NA , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
发明人: Jong Ho NA , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
IPC分类号: H01L33/00
CPC分类号: H01L33/06 , H01L33/007 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/0002 , H01L2924/12032 , H01L2924/00 , H01L2924/00014
摘要: Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.
摘要翻译: 公开了一种发光器件,其制造方法,发光器件封装和照明系统。 发光器件包括第一导电半导体层,在第一导电层上包括阱层和阻挡层的有源层以及有源层上的第二导电半导体层。 阱层包括最靠近第一导电半导体层并且具有第一能带隙的第一阱层,最靠近第二导电半导体层的第三阱层并具有第三能带隙,以及插入在第一和第二阱层之间的第二阱层, 第三阱层并具有第二能带隙。 第三阱层的第三能带隙大于第二阱层的第二能带隙。
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公开(公告)号:US09029875B2
公开(公告)日:2015-05-12
申请号:US13429623
申请日:2012-03-26
申请人: Jong Ho Na , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
发明人: Jong Ho Na , Se Hwan Sim , Chong Cook Kim , Jae In Yoon , Jong Pil Jeong , Jung Hyun Hwang , Dong Han Yoo
CPC分类号: H01L33/06 , H01L33/007 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/0002 , H01L2924/12032 , H01L2924/00 , H01L2924/00014
摘要: Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer comprising a well layer and a barrier layer on the first conductive layer, and a second conductive semiconductor layer on the active layer. The well layer includes a first well layer closest to the first conductive semiconductor layer and having a first energy bandgap, a third well layer closest to the second conductive semiconductor layer and having a third energy bandgap, and a second well layer interposed between the first and third well layers and having a second energy bandgap. The third energy bandgap of the third well layer is greater than the second energy bandgap of the second well layer.
摘要翻译: 公开了一种发光器件,其制造方法,发光器件封装和照明系统。 发光器件包括第一导电半导体层,在第一导电层上包括阱层和阻挡层的有源层以及有源层上的第二导电半导体层。 阱层包括最靠近第一导电半导体层并且具有第一能带隙的第一阱层,最靠近第二导电半导体层的第三阱层并具有第三能带隙,以及插入在第一和第二阱层之间的第二阱层, 第三阱层并具有第二能带隙。 第三阱层的第三能带隙大于第二阱层的第二能带隙。
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