Invention Grant
- Patent Title: TiN film forming method and storage medium
- Patent Title (中): TiN成膜方法和储存介质
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Application No.: US14156372Application Date: 2014-01-15
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Publication No.: US09133548B2Publication Date: 2015-09-15
- Inventor: Hideaki Yamasaki , Shinya Okabe , Takeshi Yamamoto , Toru Onishi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2013-009278 20130122; JP2013-206983 20131002
- Main IPC: H01L21/44
- IPC: H01L21/44 ; C23C16/56 ; C23C16/34 ; C23C16/44 ; H01L21/768 ; H01L21/033 ; H01L21/311 ; H01L21/3205 ; H01L21/321
Abstract:
A TiN film forming method repeatedly performs for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying a Ti-containing gas and a nitriding gas into the processing chamber, and forming a TiN film on a surface of the substrate by generating a plasma of the supplied gases. The TiN film forming method includes a Ti film forming step of forming a Ti film by supplying a processing gas containing Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates.
Public/Granted literature
- US20140206189A1 TiN FILM FORMING METHOD AND STORAGE MEDIUM Public/Granted day:2014-07-24
Information query
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