公开(公告)号：US20150004803A1

公开(公告)日：2015-01-01

申请号：US14370732

申请日：2012-12-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideaki Yamasaki ,  Takeshi Yamamoto

IPC: H01L21/033 ,  H01L21/02

CPC classification number: H01L21/0332 ,  C23C16/34 ,  C23C16/56 ,  H01L21/02274

Abstract: When forming a TiN film to be formed as a metallic hard mask for etching a film formed on a substrate to be processed, a first step and a second step are repeated a plurality of times to form a TiN film having reduced film stress. In the first step (step 1), the substrate to be processed is conveyed into a processing chamber, TiCl4 gas and a nitriding gas are fed into the processing chamber, the interior of which being kept in a depressurized state during this time, and a plasma from the gases is generated to form a TiN unit film. In the second step (step 2), a nitriding gas is fed into the processing container, a plasma of the gas is generated, and the TiN unit film is subjected to plasma nitriding.

Abstract translation: 当形成要形成为用于蚀刻形成在待处理基板上的膜的金属硬掩模的TiN膜时，第一步骤和第二步骤重复多次以形成具有降低膜应力的TiN膜。 在第一步骤（步骤1）中，将待处理的基板输送到处理室中，将TiCl 4气体和氮化气体进料到处理室内，在该处理室内部保持处于减压状态， 产生来自气体的等离子体以形成TiN单元膜。 在第二步骤（步骤2）中，将氮化气体进料到处理容器中，产生气体的等离子体，并对TiN单元膜进行等离子体氮化处理。

公开(公告)号：US09133548B2

公开(公告)日：2015-09-15

申请号：US14156372

申请日：2014-01-15

Applicant: Tokyo Electron Limited

Inventor： Hideaki Yamasaki ,  Shinya Okabe ,  Takeshi Yamamoto ,  Toru Onishi

IPC: H01L21/44 ,  C23C16/56 ,  C23C16/34 ,  C23C16/44 ,  H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/321

CPC classification number: C23C16/56 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4405 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/76856

Abstract: A TiN film forming method repeatedly performs for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying a Ti-containing gas and a nitriding gas into the processing chamber, and forming a TiN film on a surface of the substrate by generating a plasma of the supplied gases. The TiN film forming method includes a Ti film forming step of forming a Ti film by supplying a processing gas containing Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates.

Abstract translation: 对于多个待处理基板重复执行TiN膜形成方法，将每个基板装载到处理室中，将含Ti气体和氮化气体供给到处理室中的步骤，以及在表面上形成TiN膜 通过产生所供应的气体的等离子体。 TiN膜形成方法包括：Ti膜形成步骤，通过在形成TiN膜之后，在处理室中不存在基板的状态下将预定的含Ti气体的处理气体供给到处理室中来形成Ti膜， 基板数量。

公开(公告)号：US09257278B2

公开(公告)日：2016-02-09

申请号：US14370732

申请日：2012-12-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideaki Yamasaki ,  Takeshi Yamamoto

IPC: H01L21/31 ,  H01L21/033 ,  C23C16/34 ,  C23C16/56 ,  H01L21/02

CPC classification number: H01L21/0332 ,  C23C16/34 ,  C23C16/56 ,  H01L21/02274

Abstract: When forming a TiN film to be formed as a metallic hard mask for etching a film formed on a substrate to be processed, a first step and a second step are repeated a plurality of times to form a TiN film having reduced film stress. In the first step (step 1), the substrate to be processed is conveyed into a processing chamber, TiCl4 gas and a nitriding gas are fed into the processing chamber, the interior of which being kept in a depressurized state during this time, and a plasma from the gases is generated to form a TiN unit film. In the second step (step 2), a nitriding gas is fed into the processing container, a plasma of the gas is generated, and the TiN unit film is subjected to plasma nitriding.

Abstract translation: 当形成要形成为用于蚀刻形成在待处理基板上的膜的金属硬掩模的TiN膜时，第一步骤和第二步骤重复多次以形成具有降低膜应力的TiN膜。 在第一步骤（步骤1）中，将待处理的基板输送到处理室中，将TiCl 4气体和氮化气体进料到处理室内，在该处理室内部保持处于减压状态， 产生来自气体的等离子体以形成TiN单元膜。 在第二步骤（步骤2）中，将氮化气体进料到处理容器中，产生气体的等离子体，并对TiN单元膜进行等离子体氮化处理。