中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

22 records (took 0.04 seconds)

    Purging method
    1.
    发明授权
    Purging method 有权

    公开(公告)号：US10519542B2

    公开(公告)日：2019-12-31

    申请号：US15847980

    申请日：2017-12-20

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Hideaki Yamasaki ,  Takeshi Itatani

    IPC: C23C16/44 ,  H01L21/673 ,  H01L21/687 ,  H01L21/67 ,  C23C16/458

    Abstract: A purging method for purging an interior of a processing container of a substrate processing apparatus after a film forming process is executed on a wafer in the processing container, includes a first process of pressurizing a first gas in a first line of the substrate processing apparatus and then discharging the first gas into the processing container, and a second process of supplying a second gas into the processing container. The second process is executed after execution of the first process, the first gas includes an inert gas, and the second gas includes a hydrogen gas, a nitrogen-containing gas, a rare gas or a combination of these gases.

    Method of removing silicon oxide film
    2.
    发明授权
    Method of removing silicon oxide film 有权

    公开(公告)号：US10504740B2

    公开(公告)日：2019-12-10

    申请号：US16038863

    申请日：2018-07-18

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Hideaki Yamasaki ,  Takamichi Kikuchi ,  Seishi Murakami

    IPC: H01L21/311 ,  H01L21/02 ,  H01L21/768 ,  H01J37/00 ,  H01L21/67 ,  H01L21/683

    Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.

    TiN film forming method and storage medium
    3.
    发明授权
    TiN film forming method and storage medium 有权
    TiN成膜方法和储存介质

    公开(公告)号：US09133548B2

    公开(公告)日：2015-09-15

    申请号：US14156372

    申请日：2014-01-15

    Applicant: Tokyo Electron Limited

    Inventor： Hideaki Yamasaki ,  Shinya Okabe ,  Takeshi Yamamoto ,  Toru Onishi

    IPC: H01L21/44 ,  C23C16/56 ,  C23C16/34 ,  C23C16/44 ,  H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/321

    CPC classification number: C23C16/56 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4405 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/76856

    Abstract: A TiN film forming method repeatedly performs for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying a Ti-containing gas and a nitriding gas into the processing chamber, and forming a TiN film on a surface of the substrate by generating a plasma of the supplied gases. The TiN film forming method includes a Ti film forming step of forming a Ti film by supplying a processing gas containing Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates.

    Abstract translation: 对于多个待处理基板重复执行TiN膜形成方法，将每个基板装载到处理室中，将含Ti气体和氮化气体供给到处理室中的步骤，以及在表面上形成TiN膜 通过产生所供应的气体的等离子体。 TiN膜形成方法包括：Ti膜形成步骤，通过在形成TiN膜之后，在处理室中不存在基板的状态下将预定的含Ti气体的处理气体供给到处理室中来形成Ti膜， 基板数量。

    Method for forming TiN and storage medium
    7.
    发明授权
    Method for forming TiN and storage medium 有权
    用于形成TiN和存储介质的方法

    公开(公告)号：US09257278B2

    公开(公告)日：2016-02-09

    申请号：US14370732

    申请日：2012-12-12

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Hideaki Yamasaki ,  Takeshi Yamamoto

    IPC: H01L21/31 ,  H01L21/033 ,  C23C16/34 ,  C23C16/56 ,  H01L21/02

    CPC classification number: H01L21/0332 ,  C23C16/34 ,  C23C16/56 ,  H01L21/02274

    Abstract: When forming a TiN film to be formed as a metallic hard mask for etching a film formed on a substrate to be processed, a first step and a second step are repeated a plurality of times to form a TiN film having reduced film stress. In the first step (step 1), the substrate to be processed is conveyed into a processing chamber, TiCl4 gas and a nitriding gas are fed into the processing chamber, the interior of which being kept in a depressurized state during this time, and a plasma from the gases is generated to form a TiN unit film. In the second step (step 2), a nitriding gas is fed into the processing container, a plasma of the gas is generated, and the TiN unit film is subjected to plasma nitriding.

    Abstract translation: 当形成要形成为用于蚀刻形成在待处理基板上的膜的金属硬掩模的TiN膜时，第一步骤和第二步骤重复多次以形成具有降低膜应力的TiN膜。 在第一步骤（步骤1）中，将待处理的基板输送到处理室中，将TiCl 4气体和氮化气体进料到处理室内，在该处理室内部保持处于减压状态， 产生来自气体的等离子体以形成TiN单元膜。 在第二步骤（步骤2）中，将氮化气体进料到处理容器中，产生气体的等离子体，并对TiN单元膜进行等离子体氮化处理。

    Stress reducing method
    8.
    发明授权
    Stress reducing method 有权

    公开(公告)号：US12221693B2

    公开(公告)日：2025-02-11

    申请号：US18096217

    申请日：2023-01-12

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Takuya Kawaguchi ,  Takanobu Hotta ,  Hideaki Yamasaki

    IPC: C23C16/44 ,  C23C16/06 ,  C23C16/34

    Abstract: There is provided a stress reducing method comprising: preparing a film forming apparatus configured to form a tungsten film on a substrate in a chamber by supplying a tungsten raw material gas and a reducing gas into the chamber; and making at least a part of a tungsten film deposited on an in-chamber component into a chlorine-containing tungsten film whose film stress is reduced by adjusting a chlorine concentration, when performing pre-coating in the chamber and/or when forming the tungsten film on the substrate, using the tungsten raw material gas and the reducing gas.

Patent Agency Ranking