公开(公告)号：US10738374B2

公开(公告)日：2020-08-11

申请号：US15398337

申请日：2017-01-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya Okabe ,  Hideaki Yamasaki ,  Junya Oka ,  Yuuji Kobayashi ,  Takamichi Kikuchi

IPC: H01L21/58 ,  C23C4/134 ,  H01J37/32 ,  C23C16/458 ,  C23C16/44 ,  C23C4/11 ,  C23C4/137 ,  C23C4/18 ,  H01L21/687

Abstract: There is provided a method of performing a surface treatment with respect to a metal mounting table for mounting a substrate to be plasma-processed, the mounting table functioning as a lower electrode configured to generate a plasma by a high frequency power applied between an upper electrode and the lower electrode. The method includes: performing a first surface treatment by spraying a non-sublimation blast material as a non-sublimation material onto a mounting surface of the metal mounting table on which the substrate is mounted, followed by a second surface treatment by spraying a sublimation blast material as a sublimation material onto the mounting surface.

公开(公告)号：US10731248B2

公开(公告)日：2020-08-04

申请号：US15405818

申请日：2017-01-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideaki Yamasaki ,  Shinya Okabe ,  Takeshi Itatani

IPC: C23C16/54 ,  C23C16/44 ,  C23C16/455

Abstract: A vacuum processing apparatus for processing a substrate under a vacuum atmosphere includes a vacuum processing module, a vacuum transfer module, a gate valve and a control unit. The vacuum processing module includes a processing chamber, a mounting table and a first gas supply unit. The vacuum transfer module includes a transfer chamber airtightly connected to the processing chamber through the transfer port, a transfer unit and a second gas supply unit. The gate valve is configured to open and close the transfer port for the substrate. The control unit is configured to open the gate valve in a state where a flow rate of an inert gas supplied from the first gas supply unit is smaller than a flow rate of an inert gas supplied from the second gas supply unit and a pressure in the processing chamber is lower than a pressure in the transfer chamber.

公开(公告)号：US11626290B2

公开(公告)日：2023-04-11

申请号：US17397561

申请日：2021-08-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Osamu Yokoyama ,  Kwangpyo Choi ,  Kazuki Hashimoto ,  Rio Shimizu ,  Takashi Kobayashi ,  Takashi Sakuma ,  Shinya Okabe

IPC: H01L21/311 ,  H01L21/67

Abstract: A method of etching silicon oxide on a surface of a substrate is provided. The method comprises alternately repeating heating the substrate to a heating temperature of 60° C. or higher, supplying hydrogen fluoride gas and ammonia gas onto the substrate to react with the silicon oxide, and modifying the silicon oxide to obtain a reaction product, and removing at least a portion of the reaction product from the substrate while stopping the supply of the above gases and continuing to heat the substrate at the heating temperature; and when a process gas that is at least one of the hydrogen fluoride gas and the ammonia gas is supplied, while continuing to supply the process gas from an upstream side of a flow path, closing a valve disposed in the flow path to pressurize the process gas in the flow path, and then opening the valve.

公开(公告)号：US11069512B2

公开(公告)日：2021-07-20

申请号：US15671906

申请日：2017-08-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya Okabe ,  Takashi Mochizuki ,  Hideaki Yamasaki ,  Nagayasu Hiramatsu ,  Kazuki Dempoh

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/04 ,  C23C16/34 ,  C23C16/509 ,  C23C16/14 ,  C23C16/56 ,  H01L21/768 ,  C23C16/06 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/285

Abstract: A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.

公开(公告)号：US09133548B2

公开(公告)日：2015-09-15

申请号：US14156372

申请日：2014-01-15

Applicant: Tokyo Electron Limited

Inventor： Hideaki Yamasaki ,  Shinya Okabe ,  Takeshi Yamamoto ,  Toru Onishi

IPC: H01L21/44 ,  C23C16/56 ,  C23C16/34 ,  C23C16/44 ,  H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/321

CPC classification number: C23C16/56 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4405 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/76856

Abstract: A TiN film forming method repeatedly performs for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying a Ti-containing gas and a nitriding gas into the processing chamber, and forming a TiN film on a surface of the substrate by generating a plasma of the supplied gases. The TiN film forming method includes a Ti film forming step of forming a Ti film by supplying a processing gas containing Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates.

Abstract translation: 对于多个待处理基板重复执行TiN膜形成方法，将每个基板装载到处理室中，将含Ti气体和氮化气体供给到处理室中的步骤，以及在表面上形成TiN膜 通过产生所供应的气体的等离子体。 TiN膜形成方法包括：Ti膜形成步骤，通过在形成TiN膜之后，在处理室中不存在基板的状态下将预定的含Ti气体的处理气体供给到处理室中来形成Ti膜， 基板数量。

公开(公告)号：US10319585B2

公开(公告)日：2019-06-11

申请号：US15722343

申请日：2017-10-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohichi Satoh ,  Shinya Okabe ,  Nagayasu Hiramatsu ,  Motoko Nakagomi ,  Yuji Kobayashi

IPC: H01L21/4763 ,  H01L21/44 ,  H01L21/02 ,  H01J37/32 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/455 ,  C23C16/509 ,  H01J37/26

Abstract: A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.