发明授权
- 专利标题： Reversed stack MTJ
- 专利标题（中）： 反转堆叠MTJ
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申请号： US14016343申请日： 2013-09-03
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公开(公告)号： US09196825B2公开(公告)日： 2015-11-24
- 发明人: Wei-Hang Huang , Fu-Ting Sung , Chern-Yow Hsu , Shih-Chang Liu , Chia-Shiung Tsai
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Eschweiler & Associates, LLC
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L43/12 ; H01L43/02 ; H01L43/08
摘要：
An integrated circuit device includes a substrate and a magnetic tunneling junction (MTJ). The MTJ includes at least a pinned layer, a barrier layer, and a free layer. The MTJ is formed over a surface of the substrate. Of the pinned layer, the barrier layer, and the free layer, the free layer is formed first and is closest to the surface. This enables a spacer to be formed over a perimeter region of the free layer prior to etching the free layer. Any damage to the free layer that results from etching or other free layer edge-defining process is kept at a distance from the tunneling junction by the spacer.
公开/授权文献
- US20150061052A1 Reversed Stack MTJ 公开/授权日：2015-03-05
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