Invention Grant
US09257571B1 Memory gate first approach to forming a split gate flash memory cell device
有权
存储器门第一种形成分离栅闪存单元器件的方法
- Patent Title: Memory gate first approach to forming a split gate flash memory cell device
- Patent Title (中): 存储器门第一种形成分离栅闪存单元器件的方法
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Application No.: US14477911Application Date: 2014-09-05
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Publication No.: US09257571B1Publication Date: 2016-02-09
- Inventor: Yuan-Tai Tseng , Yu-Hsing Chang , Chang-Ming Wu , Shih-Chang Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweller & Associates, LLC
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L29/792 ; H01L29/51 ; H01L29/423 ; H01L29/66 ; H01L21/28 ; H01L21/311 ; H01L21/3213
Abstract:
A split gate flash memory cell device with a line-shaped charge trapping dielectric structure is provided. A semiconductor substrate includes a first source/drain region and a second source/drain region. A select gate and a memory gate are spaced over the semiconductor substrate between the first and second source/drain regions. A line-shaped charge trapping dielectric structure is arranged between the semiconductor substrate and the memory gate. A method for manufacturing the split gate flash memory cell device is also provided.
Information query
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