Invention Grant
- Patent Title: Magnetic resistance structure, method of manufacturing the magnetic resistance structure, and electronic device including the magnetic resistance structure
- Patent Title (中): 磁阻结构，磁阻结构的制造方法以及包含磁阻结构的电子器件
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Application No.: US14282470Application Date: 2014-05-20
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Publication No.: US09368177B2Publication Date: 2016-06-14
- Inventor: Hwansoo Suh , Insu Jeon , Min-woo Kim , Young-jae Song , Min Wang , Qinke Wu , Sung-joo Lee , Sung-kyu Jang , Seong-jun Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.,Sungkyunkwan University Foundation for Corporate Colaboration
- Current Assignee: Samsung Electronics Co., Ltd.,Sungkyunkwan University Foundation for Corporate Colaboration
- Current Assignee Address: KR Gyeonggi-do KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0137885 20131113
- Main IPC: H01L29/66
- IPC: H01L29/66 ; G11C11/16 ; H01L43/08 ; H01L43/12 ; H01L27/22
Abstract:
Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.
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