公开(公告)号：US09515143B2

公开(公告)日：2016-12-06

申请号：US14211327

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-joo Lee ,  Young-jae Song ,  Min Wang ,  Sung-kyu Jang ,  Jae-young Choi

IPC: H01L29/12 ,  H01L29/16 ,  H01L21/02 ,  H01L29/267 ,  H01L29/778

CPC classification number: H01L29/1606 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/267 ,  H01L29/778 ,  H01L29/7781

Abstract: A method of manufacturing a heterogeneous layered structure includes growing a hexagonal boron nitride sheet directly on a metal substrate in a chamber, increasing a temperature of the chamber to about 300° C. to about 1500° C., and forming a graphene sheet on the hexagonal boron nitride sheet by supplying a carbon source into the chamber while thermally treating the hexagonal boron nitride sheet at the increased temperature.

Abstract translation: 制造非均匀层状结构的方法包括在室内的金属基材上直接生长六方氮化硼片，将该室的温度升高至约300℃至约1500℃，并在其上形成石墨烯片 通过在增加的温度下对六方氮化硼片进行热处理而将碳源供应到室中，从而形成六方氮化硼片。

公开(公告)号：US09368177B2

公开(公告)日：2016-06-14

申请号：US14282470

申请日：2014-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwansoo Suh ,  Insu Jeon ,  Min-woo Kim ,  Young-jae Song ,  Min Wang ,  Qinke Wu ,  Sung-joo Lee ,  Sung-kyu Jang ,  Seong-jun Jung

IPC: H01L29/66 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

CPC classification number: G11C11/161 ,  G11C2213/35 ,  H01L27/22 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/30

Abstract: Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.

Abstract translation: 提供磁阻结构，制造磁阻结构的方法以及包括磁阻结构的电子器件。 制造磁阻结构的方法包括：形成六方氮化硼层，在氮化硼层上形成石墨烯层，根据嵌入工艺在氮化硼层和石墨烯层之间形成第一磁性材料层; 以及在所述石墨烯层上形成第二磁性材料层。