发明授权
- 专利标题: Method of manufacturing an electrode for an energy storage device
- 专利标题(中): 制造储能装置用电极的方法
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申请号: US13806104申请日: 2011-06-14
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公开(公告)号: US09368249B2公开(公告)日: 2016-06-14
- 发明人: Katsuji Nakamura , Kaichi Tsuruta , Yuji Ozaki , Shigeaki Watarai , Hidenori Takagi , Yutaka Ohori
- 申请人: Katsuji Nakamura , Kaichi Tsuruta , Yuji Ozaki , Shigeaki Watarai , Hidenori Takagi , Yutaka Ohori
- 申请人地址: JP Tokyo
- 专利权人: Senju Metal Industry Co., Ltd.
- 当前专利权人: Senju Metal Industry Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Chernoff, Vilhauer, McClung & Stenzel, LLP
- 优先权: JP2010-145566 20100625
- 国际申请: PCT/JP2011/063575 WO 20110614
- 国际公布: WO2011/162126 WO 20111229
- 主分类号: H01R43/16
- IPC分类号: H01R43/16 ; H01B1/02 ; C23C18/16 ; C23C18/18 ; C23C18/54 ; H01G11/24 ; H01G11/66 ; H01M2/20 ; H01M2/30 ; H01B13/32 ; C25D5/12 ; C25D5/44 ; C23C18/36 ; C23C18/52
摘要:
Zn layer 21 or Zn alloy layer, Ni layer 22, and Sn layer 23 or Sn alloy layer are formed on a connecting terminal part 10a of a positive electrode composed of Al by plating. Accordingly, this can solder Cu negative electrode, which is composed of metal that is different species from Al, through Sn layer 23 or Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. Further, since the contacting area is increased in comparison with the conventional jointing by the spot-welding or the conventional fastening by a bolt so that the resistance value at the contacting point is reduced, the voltage drop of the energy storage device by contact resistance can be reduced.
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