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    SEMI ADDITIVE MANUFACTURING PROCESS FOR PRODUCING PRINTED ELECTRONICS
    2.
    发明申请
    SEMI ADDITIVE MANUFACTURING PROCESS FOR PRODUCING PRINTED ELECTRONICS 有权

    公开(公告)号：US20230074639A1

    公开(公告)日：2023-03-09

    申请号：US17795342

    申请日：2021-01-27

    Applicant: CREATIVE IC3D LTD

    Inventor： Yacov MAZUZ

    IPC: H05K3/10 ,  H05K3/18 ,  H05K3/24 ,  C25D3/38 ,  C23C18/54

    Abstract: A method for producing a structure, comprising providing a Composite Conductive Substrate (CCS) with a conductive layer, a non-conductive layer and a release layer, implemented on top of the conductive layer; determining an empty conductive pattern for each layer of the structure; printing a layer of non-conductive matter on the CCS, such that the conductive pattern of the first layer left empty from the non-conductive matter; on top of the release layer, below which the conductive layer is implemented, filling the empty conductive pattern with conductive matter by electroplating; peeling the filled conductive matter or peeling the filled conductive matter and the printed non-conductive matter, from the conductive layer of the CCS.

    PLATING STACK
    3.
    发明申请
    PLATING STACK 有权

    公开(公告)号：US20230065609A1

    公开(公告)日：2023-03-02

    申请号：US17799962

    申请日：2021-02-03

    Applicant: JAPAN PURE CHEMICAL CO., LTD.

    Inventor： Kenji Yoshiba ,  Yusuke Yaguchi ,  Hiroshi Minowa

    IPC: C23C18/16 ,  C23C18/24 ,  C23C18/42 ,  C23C18/34 ,  C23C18/54

    Abstract: The problem of the present invention is to provide a plating stack (a stack of plating films) for applying on surface of conductor circuits or the like, the plating stack can maintain high bond strength when solder is bonded on that and can be produced stably.
    In the method for producing a plating stack of the present invention, a plating layer A mainly composed of a second metal is deposited on an object to be plated S mainly composed of a first metal by a substitution reaction, then a plating layer B mainly composed of palladium is deposited on the plating layer A, and then a plating layer C mainly composed of nickel is deposited on the plating layer B by a redox reaction. The first metal is, for example, copper. The second metal is, for example, gold, platinum or silver.

    Metal-coated reactive powders and methods for making the same
    4.
    发明授权
    Metal-coated reactive powders and methods for making the same 有权

    公开(公告)号：US11542605B1

    公开(公告)日：2023-01-03

    申请号：US16842883

    申请日：2020-04-08

    Applicant: HRL Laboratories, LLC

    Inventor： John H. Martin ,  Adam F. Gross

    IPC: C23C18/16 ,  B32B15/01 ,  C23C18/54

    Abstract: The disclosed process is capable of depositing thin layers of a wide variety of metals onto powders of magnesium, aluminum, and their alloys. A material is provided that comprises particles containing a reactive metal coated with a noble metal that has a less-negative standard reduction potential than the reactive metal. The coating has a thickness from 1 nanometer to 100 microns, for example. A method of forming an immersion deposit on a reactive metal comprises: combining a reactive metal, an ionic liquid, and a noble metal salt; depositing the noble metal on the reactive metal by a surface-displacement reaction, thereby generating the immersion deposit on the reactive metal; and removing the ionic liquid from the immersion deposit. The material may be present in an article or object (e.g., a sintered part) containing from 0.25 wt % to 100 wt % of a coated reactive metal as disclosed herein.

    SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD
    8.
    发明申请
    SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD 有权

    公开(公告)号：US20210317581A1

    公开(公告)日：2021-10-14

    申请号：US17264472

    申请日：2019-07-18

    Applicant: Tokyo Electron Limited

    Inventor： Takafumi Niwa ,  Yuichiro Inatomi

    IPC: C23C18/16 ,  C23C18/54 ,  H01L21/67 ,  H01L21/768

    Abstract: A substrate liquid processing apparatus includes a substrate holder 52 configured to attract, hold and rotate a substrate W; a heating device configured to heat the substrate holder 52 from an outside thereof; a plating liquid supply 53 configured to supply a plating liquid L1 onto the substrate W being rotated while being held by the substrate holder 52; and a controller 3 configured to control operations of the substrate holder 52, the heating device and the plating liquid supply 53. The controller 3 controls the heating device to heat the substrate holder 52 to equal to or higher than 50° C. before the substrate W is held by the substrate holder 52.

    Method for producing hollow structure, plated composite, and hollow structure
    10.
    发明授权
    Method for producing hollow structure, plated composite, and hollow structure 有权

    公开(公告)号：US11060191B2

    公开(公告)日：2021-07-13

    申请号：US16331188

    申请日：2018-02-22

    Applicant: ASAHI DENKA KENKYUSHO CO., LTD.

    Inventor： Masanori Mizoguchi

    IPC: C25D5/44 ,  C25D1/02 ,  C25D5/48 ,  C23C18/16 ,  C23C18/18 ,  C25D3/38 ,  C23C18/38 ,  C25D1/08 ,  C23F1/00 ,  C23C18/54

    Abstract: A method for producing a hollow structure useful as a base material for a heat sink or the like which increases a heat dissipation property of devices mounted in various kinds of electronic apparatuses, without sacrificing downsizing, thinning, weight reduction, and multifunctionality, and provides a hollow structure. The method including: producing a plated composite by coating a surface of a core made of aluminum to form a copper plating layer; cutting off part of the plated composite to expose cut surfaces of the core; and turning a part corresponding to the core into a hollow part by immersing the plated composite in a sodium solution which dissolves aluminum but does not dissolve copper and selectively dissolving and removing only the aluminum, thereby producing a hollow structure whose skeletal part is composed of all copper plating layers.

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