公开(公告)号：US20130133924A1

公开(公告)日：2013-05-30

申请号：US13806104

申请日：2011-06-14

申请人： Katsuji Nakamura ,  Kaichi Tsuruta ,  Yuji Ozaki ,  Shigeaki Watarai ,  Hidenori Takagi ,  Yutaka Ohori

发明人： Katsuji Nakamura ,  Kaichi Tsuruta ,  Yuji Ozaki ,  Shigeaki Watarai ,  Hidenori Takagi ,  Yutaka Ohori

IPC分类号： H01B1/02 ,  H01B13/32

CPC分类号： H01G11/50 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1827 ,  C23C18/31 ,  C23C18/32 ,  C23C18/36 ,  C23C18/48 ,  C23C18/52 ,  C23C18/54 ,  C25D3/12 ,  C25D3/22 ,  C25D3/30 ,  C25D3/565 ,  C25D3/60 ,  C25D5/12 ,  C25D5/44 ,  H01B1/023 ,  H01B13/32 ,  H01G11/06 ,  H01G11/24 ,  H01G11/30 ,  H01G11/66 ,  H01M2/202 ,  H01M2/26 ,  H01M2/30 ,  H01M2004/028 ,  Y02E60/13 ,  Y10T29/49147

摘要： To increase a ground contact area in comparison with the conventional jointing by the spot-welding or the conventional fastening by a bolt so that the resistance value at the contacting point is reduced and the voltage of the energy storage device can be effectively supplied without any drop of the voltage.Zn layer 21 or Zn alloy layer, Ni layer 22, and Sn layer 23 or Sn alloy layer are formed on a connecting terminal part 10a of a positive electrode composed of Al by plating. Accordingly, this can solder Cu negative electrode, which is composed of metal that is different species from Al, through Sn layer 23 or Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. Further, since the ground contact area is increased in comparison with the conventional jointing by the spot-welding or the conventional fastening by a bolt so that the resistance value at the contacting point is reduced, the voltage drop of the energy storage device by contact resistance can be reduced.

摘要翻译： 为了增加接地面积，与通过点焊的常规接合或通过螺栓的常规紧固相比，接触点的电阻值降低，并且能够有效地提供能量存储装置的电压而没有任何下落 的电压。 Zn层21或Zn合金层，Ni层22和Sn层23或Sn合金层通过电镀在由Al构成的正极的连接端子部10a上形成。 因此，这可以通过Sn层23或Sn合金层来焊接由不同于Al的金属构成的Cu负极，从而可以提高Al正极和Cu负极的接合强度。 此外，由于与通过点焊的常规接合或通过螺栓的常规紧固相比，接地面积增加，使得接触点处的电阻值降低，所以能量存储装置的接触电压的下降 可以减少

公开(公告)号：US09368249B2

公开(公告)日：2016-06-14

申请号：US13806104

申请日：2011-06-14

申请人： Katsuji Nakamura ,  Kaichi Tsuruta ,  Yuji Ozaki ,  Shigeaki Watarai ,  Hidenori Takagi ,  Yutaka Ohori

发明人： Katsuji Nakamura ,  Kaichi Tsuruta ,  Yuji Ozaki ,  Shigeaki Watarai ,  Hidenori Takagi ,  Yutaka Ohori

IPC分类号： H01R43/16 ,  H01B1/02 ,  C23C18/16 ,  C23C18/18 ,  C23C18/54 ,  H01G11/24 ,  H01G11/66 ,  H01M2/20 ,  H01M2/30 ,  H01B13/32 ,  C25D5/12 ,  C25D5/44 ,  C23C18/36 ,  C23C18/52

CPC分类号： H01G11/50 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1827 ,  C23C18/31 ,  C23C18/32 ,  C23C18/36 ,  C23C18/48 ,  C23C18/52 ,  C23C18/54 ,  C25D3/12 ,  C25D3/22 ,  C25D3/30 ,  C25D3/565 ,  C25D3/60 ,  C25D5/12 ,  C25D5/44 ,  H01B1/023 ,  H01B13/32 ,  H01G11/06 ,  H01G11/24 ,  H01G11/30 ,  H01G11/66 ,  H01M2/202 ,  H01M2/26 ,  H01M2/30 ,  H01M2004/028 ,  Y02E60/13 ,  Y10T29/49147

摘要： Zn layer 21 or Zn alloy layer, Ni layer 22, and Sn layer 23 or Sn alloy layer are formed on a connecting terminal part 10a of a positive electrode composed of Al by plating. Accordingly, this can solder Cu negative electrode, which is composed of metal that is different species from Al, through Sn layer 23 or Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. Further, since the contacting area is increased in comparison with the conventional jointing by the spot-welding or the conventional fastening by a bolt so that the resistance value at the contacting point is reduced, the voltage drop of the energy storage device by contact resistance can be reduced.

摘要翻译： Zn层21或Zn合金层，Ni层22和Sn层23或Sn合金层通过电镀在由Al构成的正极的连接端子部10a上形成。 因此，这可以通过Sn层23或Sn合金层来焊接由不同于Al的金属构成的Cu负极，从而可以提高Al正极和Cu负极的接合强度。 此外，由于与通过点焊的常规接合或通过螺栓的常规紧固相比，接触面积增加，使得接触点处的电阻值减小，所以能量存储装置的接触电阻的电压降可以 减少