Invention Grant
- Patent Title: Low resistance sinker contact
- Patent Title (中): 低电阻沉降片接触
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Application No.: US14695290Application Date: 2015-04-24
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Publication No.: US09397180B1Publication Date: 2016-07-19
- Inventor: Hong Yang , Seetharaman Sridhar , Yufei Xiong , Yunlong Liu , Zachary K. Lee , Peng Hu
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/45 ; H01L29/417 ; H01L29/78 ; H01L29/732 ; H01L29/739 ; H01L21/311 ; H01L21/768 ; H01L21/288 ; H01L21/3215 ; H01L21/265
Abstract:
An semiconductor device with a low resistance sinker contact wherein the low resistance sinker contact is etched through a first doped layer and is etched into a second doped layer and wherein the first doped layer overlies the second doped layer and wherein the second doped layer is more heavily doped that the first doped layer and wherein the low resistance sinker contact is filled with a metallic material. A method for forming a semiconductor device with a low resistance sinker contact wherein the low resistance sinker contact is etched through a first doped layer and is etched into a second doped layer and wherein the first doped layer overlies the second doped layer and wherein the second doped layer is more heavily doped that the first doped layer and wherein the low resistance sinker contact is filled with a metallic material.
Information query
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