Invention Grant
- Patent Title: Beam shapers, annealing systems employing the same, methods of heat treating substrates and methods of fabricating semiconductor devices
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Application No.: US14740779Application Date: 2015-06-16
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Publication No.: US09466490B2Publication Date: 2016-10-11
- Inventor: Sanghyun Kim , Chalykh Roman , Jongju Park , Donggun Lee , Seongsue Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2012-0104116 20120919
- Main IPC: H01L21/268
- IPC: H01L21/268 ; H01L21/324 ; B23K26/352 ; B23K26/354 ; H01L21/027 ; B23K26/00 ; B23K26/06 ; B23K26/073 ; G03F1/24 ; G02B27/09 ; H01L21/033
Abstract:
A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.
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