Invention Grant
US09478431B2 BARC-assisted process for planar recessing or removing of variable-height layers
有权
用于平面凹陷或去除可变高度层的BARC辅助工艺
- Patent Title: BARC-assisted process for planar recessing or removing of variable-height layers
- Patent Title (中): 用于平面凹陷或去除可变高度层的BARC辅助工艺
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Application No.: US14967741Application Date: 2015-12-14
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Publication No.: US09478431B2Publication Date: 2016-10-25
- Inventor: Wen-Kuei Liu , Teng-Chun Tsai , Kuo-Yin Lin , Shen-Nan Lee , Yu-Wei Chou , Kuo-Cheng Lien , Chang-Sheng Lin , Chih-Chang Hung , Yung-Cheng Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L29/66 ; H01L21/28 ; H01L21/311 ; H01L21/3213 ; H01L21/02 ; H01L21/308 ; H01L29/06

Abstract:
The present disclosure provides a method of manufacturing an integrated circuit device in some embodiments. In the method, a semiconductor substrate is processed through a series of operations to form a topographically variable surface over the semiconductor substrate. The topographically variable surface varies in height across the semiconductor substrate. A polymeric bottom anti-reflective coating (BARC) is provided over the topographically variable surface. Chemical mechanical polishing is performed to remove a first portion of the BARC, and etching effectuates a top-down recessing of the BARC.
Public/Granted literature
- US20160099157A1 BARC-ASSISTED PROCESS FOR PLANAR RECESSING OR REMOVING OF VARIABLE-HEIGHT LAYERS Public/Granted day:2016-04-07
Information query
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