Method of forming a semiconductor structure

Invention Grant

US09530646B2 Method of forming a semiconductor structure 有权

Title translation: 形成半导体结构的方法

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Patent Title: Method of forming a semiconductor structure
Patent Title (中): 形成半导体结构的方法
Application No.: US14629491

Application Date: 2015-02-24
Publication No.: US09530646B2

Publication Date: 2016-12-27
Inventor: Li-Wei Feng , Shih-Hung Tsai , Chao-Hung Lin , Hon-Huei Liu , An-Chi Liu , Chih-Wei Wu , Jyh-Shyang Jenq , Shih-Fang Hong , En-Chiuan Liou , Ssu-I Fu , Yu-Hsiang Hung , Chih-Kai Hsu , Mei-Chen Chen , Chia-Hsun Tseng
Applicant: UNITED MICROELECTRONICS CORP.
Applicant Address: TW Hsin-Chu
Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee Address: TW Hsin-Chu
Agent Winston Hsu; Scott Margo
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L21/033 ; H01L21/66 ; H01L21/308

Abstract:

A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is provided. Next, a plurality of first mandrels is formed on a substrate through the patterned hard mask. Following these, at least one sidewall image transferring (SIT) process is performed. Finally, a plurality of fins is formed in the substrate, wherein each of the fins has a predetermined critical dimension (CD), and each of the mandrel patterns has a CD being 5-8 times greater than the predetermined CD.

Abstract(Chinese):

形成半导体结构的方法包括以下步骤。首先，提供具有多个心轴图案的图案化的硬掩模层。接下来，通过图案化的硬掩模在基板上形成多个第一心轴。接下来，执行至少一个侧壁图像传送（SIT）处理。最后，在基板上形成多个散热片，其中每个翅片具有预定的临界尺寸（CD），并且每个心轴图案具有比预定CD大5-8倍的CD。

Public/Granted literature

US20160247678A1 METHOD OF FORMING A SEMICONDUCTOR STRUCTURE Public/Granted day:2016-08-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺