公开(公告)号：US09373505B2

公开(公告)日：2016-06-21

申请号：US14278296

申请日：2014-05-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Ying Huang ,  Jen-Hsiu Li ,  Mei-Chen Chen ,  Ya-Ling Chen ,  Yi-Jing Wang ,  Chi-Ming Huang

IPC: H01L23/544 ,  H01L21/033

CPC classification number: H01L21/0334 ,  H01L21/0337 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In this disclosure, a mark segmentation method and a method for manufacturing a semiconductor structure applying the same are provided. The mark segmentation method comprises the following steps. First, a plurality of segments having a width WS and separated from each other by a space SS formed on a substrate are identified by a processor. Thereafter, a plurality of marks are set over the segments by the processor. This step comprises: (1) adjusting a width WM of each one of the marks being equal to m(WS+SS)+WS or m(WS+SS)+SS by the processor, wherein m is an integer; and (2) adjusting a space SM of adjacent two of the marks by the processor such that WM+SM=n(WS+SS), wherein n is an integer.

Abstract translation: 在本公开中，提供了一种标记分割方法及其制造应用该半导体结构的方法。 标记分割方法包括以下步骤。 首先，通过处理器识别具有宽度WS并且由形成在基板上的空间SS彼此分离的多个段。 此后，处理器在片段上设置多个标记。 该步骤包括：（1）处理器调整每一个标记的宽度WM等于m（WS + SS）+ WS或m（WS + SS）+ SS，其中m是整数; 和（2）由处理器调整相邻两个标记的空格SM，使得WM + SM = n（WS + SS），其中n是整数。

公开(公告)号：US09653404B1

公开(公告)日：2017-05-16

申请号：US15245161

申请日：2016-08-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Jing Wang ,  En-Chiuan Liou ,  Mei-Chen Chen ,  Han-Lin Zeng ,  Chia-Hung Lin ,  Chun-Chi Yu

IPC: H01L23/544

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446

Abstract: The present invention provides an overlay target. The overlay target includes a plurality of first pattern blocks and a plurality of second pattern blocks. The first pattern blocks and the second patterns blocks are arranged in array by being separated by at least one first gaps stretching along a first direction and at least one second gaps stretching along a second direction. Each first pattern block is composed of a plurality of first stripe patterns stretching along a third direction, and each second pattern block is composed of a plurality of second stripe patterns stretching along a fourth direction. The first direction is orthogonal to the second direction, the third direction and the fourth direction are 45 degrees relative to the first direction.

公开(公告)号：US09530646B2

公开(公告)日：2016-12-27

申请号：US14629491

申请日：2015-02-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Li-Wei Feng ,  Shih-Hung Tsai ,  Chao-Hung Lin ,  Hon-Huei Liu ,  An-Chi Liu ,  Chih-Wei Wu ,  Jyh-Shyang Jenq ,  Shih-Fang Hong ,  En-Chiuan Liou ,  Ssu-I Fu ,  Yu-Hsiang Hung ,  Chih-Kai Hsu ,  Mei-Chen Chen ,  Chia-Hsun Tseng

IPC: H01L21/8234 ,  H01L21/033 ,  H01L21/66 ,  H01L21/308

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/823431 ,  H01L22/12

Abstract: A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is provided. Next, a plurality of first mandrels is formed on a substrate through the patterned hard mask. Following these, at least one sidewall image transferring (SIT) process is performed. Finally, a plurality of fins is formed in the substrate, wherein each of the fins has a predetermined critical dimension (CD), and each of the mandrel patterns has a CD being 5-8 times greater than the predetermined CD.

Abstract translation: 形成半导体结构的方法包括以下步骤。 首先，提供具有多个心轴图案的图案化的硬掩模层。 接下来，通过图案化的硬掩模在基板上形成多个第一心轴。 接下来，执行至少一个侧壁图像传送（SIT）处理。 最后，在基板上形成多个散热片，其中每个翅片具有预定的临界尺寸（CD），并且每个心轴图案具有比预定CD大5-8倍的CD。

公开(公告)号：US20160247678A1

公开(公告)日：2016-08-25

申请号：US14629491

申请日：2015-02-24

Applicant: United Microelectronics Corp.

Inventor： Li-Wei Feng ,  Shih-Hung Tsai ,  Chao-Hung Lin ,  Hon-Huei Liu ,  An-Chi Liu ,  Chih-Wei Wu ,  Jyh-Shyang Jenq ,  Shih-Fang Hong ,  En-Chiuan Liou ,  Ssu-I Fu ,  Yu-Hsiang Hung ,  Chih-Kai Hsu ,  Mei-Chen Chen ,  Chia-Hsun Tseng

IPC: H01L21/033 ,  H01L21/66

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/823431 ,  H01L22/12

Abstract: A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is provided. Next, a plurality of first mandrels is formed on a substrate through the patterned hard mask. Following these, at least one sidewall image transferring (SIT) process is performed. Finally, a plurality of fins is formed in the substrate, wherein each of the fins has a predetermined critical dimension (CD), and each of the mandrel patterns has a CD being 5-8 times greater than the predetermined CD.

Abstract translation: 形成半导体结构的方法包括以下步骤。 首先，提供具有多个心轴图案的图案化的硬掩模层。 接下来，通过图案化的硬掩模在基板上形成多个第一心轴。 接下来，执行至少一个侧壁图像传送（SIT）处理。 最后，在基板上形成多个散热片，其中每个翅片具有预定的临界尺寸（CD），并且每个心轴图案具有比预定CD大5-8倍的CD。

公开(公告)号：US20150294058A1

公开(公告)日：2015-10-15

申请号：US14278296

申请日：2014-05-15

Applicant: United Microelectronics Corp.

Inventor： En-Chiuan Liou ,  Yu-Ying Huang ,  Jen-Hsiu Li ,  Mei-Chen Chen ,  Ya-Ling Chen ,  Yi-Jing Wang ,  Chi-Ming Huang

IPC: G06F17/50 ,  H01L21/033

CPC classification number: H01L21/0334 ,  H01L21/0337 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In this disclosure, a mark segmentation method and a method for manufacturing a semiconductor structure applying the same are provided. The mark segmentation method comprises the following steps. First, a plurality of segments having a width WS and separated from each other by a space SS formed on a substrate are identified by a processor. Thereafter, a plurality of marks are set over the segments by the processor. This step comprises: (1) adjusting a width WM of each one of the marks being equal to m(WS+SS)+WS or m(WS+SS)+SS by the processor, wherein m is an integer; and (2) adjusting a space SM of adjacent two of the marks by the processor such that WM+SM=n(WS+SS), wherein n is an integer.

Abstract translation: 在本公开中，提供了一种标记分割方法及其制造应用该半导体结构的方法。 标记分割方法包括以下步骤。 首先，通过处理器识别具有宽度WS并且由形成在基板上的空间SS彼此分离的多个段。 此后，处理器在片段上设置多个标记。 该步骤包括：（1）处理器调整每一个标记的宽度WM等于m（WS + SS）+ WS或m（WS + SS）+ SS，其中m是整数; 和（2）由处理器调整相邻两个标记的空格SM，使得WM + SM = n（WS + SS），其中n是整数。