发明授权
- 专利标题： Dense arrays and charge storage devices
- 专利标题（中）： 密集阵列和电荷存储设备
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申请号： US14856131申请日： 2015-09-16
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公开(公告)号： US09559110B2公开(公告)日： 2017-01-31
- 发明人: Thomas H. Lee
- 申请人： SANDISK 3D LLC
- 申请人地址： US TX Plano
- 专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人地址： US TX Plano
- 代理机构： The Marbury Law Group PLLC
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L27/115 ; G11C16/34 ; H01L21/822 ; H01L27/06 ; H01L27/112 ; H01L29/423 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; H01L29/861 ; H01L29/16 ; G11C16/10 ; G11C16/14 ; G11C16/26 ; H01L29/06 ; H01L29/51 ; H01L27/12
摘要：
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive levels is planarized by chemical mechanical polishing.
公开/授权文献
- US20160079258A1 DENSE ARRAYS AND CHARGE STORAGE DEVICES 公开/授权日：2016-03-17
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