Invention Grant
- Patent Title: Microelectromechanical systems (MEMS) devices at different pressures
-
Application No.: US14557513Application Date: 2014-12-02
-
Publication No.: US09656857B2Publication Date: 2017-05-23
- Inventor: Hsin-Ting Huang , Hsiang-Fu Chen , Wen-Chuan Tai , Shao-Chi Yu , Chia-Ming Hung , Allen Timothy Chang , Bruce C. S. Chou , Chin-Min Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B81B7/02
- IPC: B81B7/02

Abstract:
Some embodiments relate to multiple MEMS devices that are integrated together on a single substrate. A device substrate comprising first and second micro-electro mechanical system (MEMS) devices is bonded to a capping structure. The capping structure comprises a first cavity arranged over the first MEMS device and a second cavity arranged over the second MEMS device. The first cavity is filled with a first gas at a first gas pressure. The second cavity is filled with a second gas at a second gas pressure, which is different from the first gas pressure. A recess is arranged within a lower surface of the capping structure. The recess abuts the second cavity. A vent is arranged within the capping structure. The vent extends from a top of the recess to the upper surface of the capping structure. A lid is arranged within the vent and configured to seal the second cavity.
Public/Granted literature
- US20160130137A1 MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES AT DIFFERENT PRESSURES Public/Granted day:2016-05-12
Information query