Invention Grant
- Patent Title: SiC epitaxial wafer and method for manufacturing the same
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Application No.: US14407397Application Date: 2013-06-19
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Publication No.: US09679767B2Publication Date: 2017-06-13
- Inventor: Akira Miyasaka , Yutaka Tajima , Yoshiaki Kageshima , Daisuke Muto , Kenji Momose
- Applicant: SHOWA DENKO K.K.
- Applicant Address: JP Tokyo
- Assignee: SHOWA DENKO K.K.
- Current Assignee: SHOWA DENKO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-137912 20120619
- International Application: PCT/JP2013/066808 WO 20130619
- International Announcement: WO2013/191201 WO 20131227
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/66 ; C30B25/20 ; C30B29/36 ; C30B25/00 ; C30B25/18 ; H01L29/06 ; H01L29/16
Abstract:
Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.
Public/Granted literature
- US20150162187A1 SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-06-11
Information query
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