公开(公告)号：US10176987B2

公开(公告)日：2019-01-08

申请号：US15587258

申请日：2017-05-04

Applicant: SHOWA DENKO K.K.

Inventor： Akira Miyasaka ,  Yutaka Tajima ,  Yoshiaki Kageshima ,  Daisuke Muto ,  Kenji Momose

IPC: H01L21/02 ,  H01L29/34 ,  C23C16/32 ,  H01L29/16 ,  H01L29/06 ,  C30B25/18 ,  C30B25/00 ,  C30B29/36 ,  C30B25/20 ,  H01L21/66

Abstract: A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm2 to 0.5 pieces/cm2 (where x indicates the off angle).

公开(公告)号：US20150162187A1

公开(公告)日：2015-06-11

申请号：US14407397

申请日：2013-06-19

Applicant: SHOWA DENKO K.K.

Inventor： Akira Miyasaka ,  Yutaka Tajima ,  Yoshiaki Kageshima ,  Daisuke Muto ,  Kenji Momose

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/06 ,  H01L21/66

CPC classification number: H01L21/0262 ,  C23C16/325 ,  C30B25/00 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L22/12 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/34

Abstract: Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.

Abstract translation: 提供了使用安装在手套箱中的SiC-CVD炉在SiC衬底上制造包括SiC外延层的SiC外延晶片的方法。 该方法包括将SiC衬底放置在SiC-CVD炉中同时在手套箱中循环气体的SiC衬底放置步骤。

公开(公告)号：US09679767B2

公开(公告)日：2017-06-13

申请号：US14407397

申请日：2013-06-19

Applicant: SHOWA DENKO K.K.

Inventor： Akira Miyasaka ,  Yutaka Tajima ,  Yoshiaki Kageshima ,  Daisuke Muto ,  Kenji Momose

IPC: H01L21/02 ,  H01L21/66 ,  C30B25/20 ,  C30B29/36 ,  C30B25/00 ,  C30B25/18 ,  H01L29/06 ,  H01L29/16

CPC classification number: H01L21/0262 ,  C23C16/325 ,  C30B25/00 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L22/12 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/34

Abstract: Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.