公开(公告)号：US10176987B2

公开(公告)日：2019-01-08

申请号：US15587258

申请日：2017-05-04

Applicant: SHOWA DENKO K.K.

Inventor： Akira Miyasaka ,  Yutaka Tajima ,  Yoshiaki Kageshima ,  Daisuke Muto ,  Kenji Momose

IPC: H01L21/02 ,  H01L29/34 ,  C23C16/32 ,  H01L29/16 ,  H01L29/06 ,  C30B25/18 ,  C30B25/00 ,  C30B29/36 ,  C30B25/20 ,  H01L21/66

Abstract: A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm2 to 0.5 pieces/cm2 (where x indicates the off angle).

公开(公告)号：US20150162187A1

公开(公告)日：2015-06-11

申请号：US14407397

申请日：2013-06-19

Applicant: SHOWA DENKO K.K.

Inventor： Akira Miyasaka ,  Yutaka Tajima ,  Yoshiaki Kageshima ,  Daisuke Muto ,  Kenji Momose

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/06 ,  H01L21/66

CPC classification number: H01L21/0262 ,  C23C16/325 ,  C30B25/00 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L22/12 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/34

Abstract: Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.

Abstract translation: 提供了使用安装在手套箱中的SiC-CVD炉在SiC衬底上制造包括SiC外延层的SiC外延晶片的方法。 该方法包括将SiC衬底放置在SiC-CVD炉中同时在手套箱中循环气体的SiC衬底放置步骤。

公开(公告)号：US10774444B2

公开(公告)日：2020-09-15

申请号：US16063911

申请日：2016-12-12

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke Muto ,  Akira Miyasaka

IPC: C30B25/16 ,  C30B29/36 ,  H01L21/02 ,  C30B25/18 ,  C23C16/32 ,  C23C16/455 ,  C30B25/20

Abstract: This method of producing a SiC epitaxial wafer having an epitaxial layer on a SiC single crystal substrate, and includes: when performing crystal growth of the epitaxial layer, a step of forming a part of an epitaxial layer under first conditions at an initial stage where the crystal growth is started; and a step of forming a part of a SiC epitaxial layer under second conditions in which a Cl/Si ratio is decreased and a C/Si ratio is increased in comparison to those in the first conditions, wherein the C/Si ratio is equal to or less than 0.6 and the Cl/Si ratio is equal to or more than 5.0 in the first conditions.

公开(公告)号：US09768047B2

公开(公告)日：2017-09-19

申请号：US15260152

申请日：2016-09-08

Applicant: SHOWA DENKO K.K.

Inventor： Yoshiaki Kageshima ,  Daisuke Muto ,  Kenji Momose ,  Yoshihiko Miyasaka

IPC: H01L29/15 ,  H01L21/68 ,  C30B29/36 ,  H01L21/02 ,  C30B25/02 ,  C30B25/12 ,  C30B25/16 ,  H01L29/16 ,  H01L29/34 ,  C23C16/44 ,  C23C16/32 ,  C23C16/52

CPC classification number: H01L21/681 ,  C23C16/325 ,  C23C16/4401 ,  C23C16/52 ,  C30B25/02 ,  C30B25/12 ,  C30B25/16 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/0262 ,  H01L29/1608 ,  H01L29/34

Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

公开(公告)号：US09679767B2

公开(公告)日：2017-06-13

申请号：US14407397

申请日：2013-06-19

Applicant: SHOWA DENKO K.K.

Inventor： Akira Miyasaka ,  Yutaka Tajima ,  Yoshiaki Kageshima ,  Daisuke Muto ,  Kenji Momose

IPC: H01L21/02 ,  H01L21/66 ,  C30B25/20 ,  C30B29/36 ,  C30B25/00 ,  C30B25/18 ,  H01L29/06 ,  H01L29/16

CPC classification number: H01L21/0262 ,  C23C16/325 ,  C30B25/00 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L22/12 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/34

Abstract: Provided is a method of manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a SiC substrate using a SiC-CVD furnace which is installed in a glove box. The method includes a SiC substrate placement step of placing the SiC substrate in the SiC-CVD furnace while circulating gas in the glove box.

公开(公告)号：US10208398B2

公开(公告)日：2019-02-19

申请号：US15531593

申请日：2015-11-27

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke Muto ,  Jun Norimatsu

IPC: H01L21/02 ,  C30B25/20 ,  C30B25/12 ,  C30B29/36 ,  C23C16/32 ,  C23C16/458 ,  H01L29/16 ,  C30B25/16 ,  C23C16/455 ,  H01L21/687

Abstract: Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to be mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.

公开(公告)号：US11105016B2

公开(公告)日：2021-08-31

申请号：US16519242

申请日：2019-07-23

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke Muto

IPC: C30B35/00 ,  C30B23/06 ,  C23C14/24 ,  C23C14/06 ,  C30B29/36

Abstract: A crystal growth apparatus, comprising a crucible, a heat-insulating material which covers a circumference of the crucible, and a heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, wherein the heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening in the heat-insulating material.

公开(公告)号：US10519566B2

公开(公告)日：2019-12-31

申请号：US16233390

申请日：2018-12-27

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke Muto ,  Jun Norimatsu

IPC: H01L21/02 ,  C30B25/20 ,  C30B25/12 ,  C30B29/36 ,  C23C16/32 ,  C23C16/458 ,  H01L29/16 ,  C30B25/16 ,  C23C16/455 ,  H01L21/687

Abstract: Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to be mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.