- Patent Title: Gas flow profile modulated control of overlay in plasma CVD films
-
Application No.: US15192732Application Date: 2016-06-24
-
Publication No.: US09837265B2Publication Date: 2017-12-05
- Inventor: Prashant Kumar Kulshreshtha , Sudha Rathi , Praket P. Jha , Saptarshi Basu , Kwangduk Douglas Lee , Martin J. Seamons , Bok Hoen Kim , Ganesh Balasubramanian , Ziqing Duan , Lei Jing , Mandar B. Pandit
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; C23C16/458 ; C23C16/46 ; H01L21/033 ; H01L21/66 ; C23C16/26 ; C23C16/04 ; H01L21/311

Abstract:
Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.
Public/Granted literature
- US20160307752A1 GAS FLOW PROFILE MODULATED CONTROL OF OVERLAY IN PLASMA CVD FILMS Public/Granted day:2016-10-20
Information query
IPC分类: