Invention Grant
- Patent Title: Monolithic MEMS platform for integrated pressure, temperature, and gas sensor
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Application No.: US14645826Application Date: 2015-03-12
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Publication No.: US09845236B2Publication Date: 2017-12-19
- Inventor: Shao-Chi Yu , Chia-Ming Hung , Hsin-Ting Huang , Hsiang-Fu Chen , Allen Timothy Chang , Wen-Chuan Tai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B81C1/00
- IPC: B81C1/00 ; G01L19/00 ; B81B7/02 ; G01L9/00 ; G01K13/00 ; G01N27/22

Abstract:
The present disclosure is directed to a monolithic MEMS (micro-electromechanical system) platform having a temperature sensor, a pressure sensor and a gas sensor, and an associated method of formation. In some embodiments, the MEMS platform includes a semiconductor substrate having one or more transistor devices and a temperature sensor. A dielectric layer is disposed over the semiconductor substrate. A cavity is disposed within an upper surface of the dielectric layer. A MEMS substrate is arranged onto the upper surface of the dielectric layer and has a first section and a second section. A pressure sensor has a first pressure sensor electrode that is vertically separated by the cavity from a second pressure sensor electrode within the first section of a MEMS substrate. A gas sensor has a polymer disposed between a first gas sensor electrode within the second section of a MEMS substrate and a second gas sensor electrode.
Public/Granted literature
- US20160266061A1 MONOLITHIC MEMS PLATFORM FOR INTEGRATED PRESSURE, TEMPERATURE, AND GAS SENSOR Public/Granted day:2016-09-15
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