Invention Grant
- Patent Title: Structure for thermally assisted MRAM
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Application No.: US15347327Application Date: 2016-11-09
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Publication No.: US09917247B2Publication Date: 2018-03-13
- Inventor: Anthony J. Annunziata , Lucian Prejbeanu , Philip L. Trouilloud , Daniel C. Worledge
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , Crocus Technology SA
- Applicant Address: US NY Armonk FR Grenoble Cedex
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,CROCUS TECHNOLOGY SA
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,CROCUS TECHNOLOGY SA
- Current Assignee Address: US NY Armonk FR Grenoble Cedex
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/12 ; H01L27/22 ; G11C14/00 ; G11C11/56 ; H01L29/82 ; G11C11/16 ; G01R33/06 ; H01L43/10
Abstract:
A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.
Public/Granted literature
- US20170062701A1 STRUCTURE FOR THERMALLY ASSISTED MRAM Public/Granted day:2017-03-02
Information query
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