Invention Grant
- Patent Title: Devices with backside metal structures and methods of formation thereof
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Application No.: US15229985Application Date: 2016-08-05
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Publication No.: US09960076B2Publication Date: 2018-05-01
- Inventor: Oliver Hellmund , Ingo Muri , Johannes Baumgartl , Iris Moder , Thomas Christian Neidhart , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L21/762 ; H01L21/311 ; H01L21/306 ; H01L21/28 ; H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L21/3105
Abstract:
A method of fabricating a semiconductor device includes forming trenches filled with a sacrificial material. The trenches extend into a semiconductor substrate from a first side. An epitaxial layer is formed over the first side of the semiconductor substrate and the trenches. From a second side of the semiconductor substrate opposite to the first side, the sacrificial material in the trenches is removed. The trenches are filled with a conductive material.
Public/Granted literature
- US20180040504A1 Devices with Backside Metal Structures and Methods of Formation Thereof Public/Granted day:2018-02-08
Information query
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