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8 条记录 (耗时 0.011 秒)

    THYRISTOR MEMORY CELL INTEGRATED CIRCUIT
    1.
    发明公开
    THYRISTOR MEMORY CELL INTEGRATED CIRCUIT 审中-公开
    晶体管存储器单元集成电路

    公开(公告)号：EP3025349A2

    公开(公告)日：2016-06-01

    申请号：EP14829912.6

    申请日：2014-07-18

    申请人： Opel Solar, Inc. ,  The University of Connecticut

    发明人： TAYLOR, Geoff, W.

    IPC分类号： G11C11/39

    CPC分类号： G11C13/0004 ,  G11C11/39 ,  G11C13/0097 ,  G11C14/0045 ,  G11C14/009 ,  H01L27/2445 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233

    摘要： A semiconductor memory device including an array of memory cells (MC) formed on a substrate each realized from a load element and thyristor that define a switchable current path whose state represents a volatile bit value stored by the MC. At least one word line corresponding to a respective row of the array is formed on the substrate and coupled to MC current paths for the corresponding row. Bit lines corresponding to respective columns of the array are formed on the substrate and can be coupled to a modulation doped QW interface of the MC thyristors for the corresponding column. Circuitry is configured to apply electrical signal to the word line(s) in order to generate current that programs phase change material of the MC load elements into one of a high or low resistive state according to state of the current path of the MCs for non-volatile backup and restore purposes.

    摘要翻译： 一种半导体存储器件，包括在基板上形成的存储器单元（MC）阵列，每个存储器单元由负载元件和晶闸管实现，该负载元件和晶闸管限定可切换电流路径，其状态表示由MC存储的易失性位值。 对应于阵列的相应行的至少一个字线形成在衬底上并且耦合到用于对应行的MC电流路径。 对应于阵列的各列的位线形成在衬底上，并且可以耦合到用于相应列的MC晶闸管的调制掺杂QW界面。 电路被配置为将电信号施加到字线以产生电流，该电流根据MC的电流路径的状态，将MC负载元件的相变材料编程为高电阻状态或低电阻状态之一 易失性备份和恢复的目的。

    OPTOELECTRONIC INTEGRATED CIRCUIT
    2.
    发明公开
    OPTOELECTRONIC INTEGRATED CIRCUIT 审中-公开
    OPTOELEKTRONISCHE INTEGRIERTE SCHALTUNG

    公开(公告)号：EP3011595A1

    公开(公告)日：2016-04-27

    申请号：EP14813594.0

    申请日：2014-06-11

    申请人： Opel Solar, Inc. ,  The University of Connecticut

    发明人： TAYLOR, Geoff, W.

    IPC分类号： H01L29/15

    CPC分类号： H01L29/0688 ,  B82Y10/00 ,  G02B6/125 ,  H01L21/0259 ,  H01L27/144 ,  H01L27/15 ,  H01L29/0665 ,  H01L29/122 ,  H01L29/127 ,  H01L29/155 ,  H01L29/66977 ,  H01L29/7786 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/18 ,  H01L33/005 ,  H01L33/06 ,  H01S5/026 ,  H01S5/06203 ,  H01S5/18358 ,  H01S5/309 ,  H01S5/34 ,  H01S5/3412

    摘要： A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure.

    摘要翻译： 半导体器件包括支撑多个层的衬底，其包括从量子阱（QD-in-QW）结构中的量子点偏移的至少一个调制掺杂量子阱（QW）结构。 调制掺杂QW结构包括通过间隔层与至少一个QW隔开的电荷片。 QD-in-QW结构将QD嵌入在一个或多个QW中。 QD-QW结构可以包括由阻挡层隔开的至少一个模板/发射子结构对，模板子结构具有比发射子结构更小的尺寸QD。 可以提供多个QD-in-QW结构以支持不同特征波长（例如1300nm至1550nm范围内的光波长）的电磁辐射的处理（发射，吸收，放大）。 该装置可以实现一种集成电路，该集成电路包括处理由QD-QW-QW结构的QD支持的特征波长的电磁辐射的各种各样的装置。 还描述和要求保护其他半导体器件。

    IMAGING CELL ARRAY INTEGRATED CIRCUIT
    3.
    发明公开
    IMAGING CELL ARRAY INTEGRATED CIRCUIT 审中-公开
    在EIN BILDGEBUNGSZELLARRAY INTEGRIERTER SCHALTKREIS

    公开(公告)号：EP3044811A4

    公开(公告)日：2017-04-19

    申请号：EP14843596

    申请日：2014-09-04

    申请人： OPEL SOLAR INC ,  UNIV CONNECTICUT

    发明人： TAYLOR GEOFF W

    IPC分类号： H01L27/148 ,  H01L27/146

    CPC分类号： H01L31/035218 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14652 ,  H01L27/14689 ,  H01L27/14812 ,  H01L27/14831 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/1113

    摘要： A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film having a periodic array of holes.

    摘要翻译： 提供一种半导体器件，其包括由形成在衬底上的多个层实现的成像单元的阵列，其中所述多个层包括与至少一个量子点结构间隔开的至少一个调制掺杂量子阱结构。 每个相应的成像单元包括与对应的电荷存储区域间隔开的成像区域。 成像区域的至少一个量子点结构产生由入射电磁辐射的吸收产生的光电流。 所述至少一个调制掺杂量子阱结构限定了用于横向转移光电流以用于电荷存储区域中的电荷累积并由其输出的掩埋沟道。 每个成像单元的至少一个调制掺杂量子阱结构和至少一个量子点结构可以设置在接收入射电磁辐射的谐振腔内或具有周期性阵列孔的结构化金属膜的下方。

    IMAGING CELL ARRAY INTEGRATED CIRCUIT
    5.
    发明公开
    IMAGING CELL ARRAY INTEGRATED CIRCUIT 审中-公开
    在成像单元阵列集成电路

    公开(公告)号：EP3044811A1

    公开(公告)日：2016-07-20

    申请号：EP14843596.9

    申请日：2014-09-04

    申请人： Opel Solar, Inc. ,  The University of Connecticut

    发明人： TAYLOR, Geoff, W.

    IPC分类号： H01L27/14 ,  H01S5/30 ,  H01S5/34

    CPC分类号： H01L31/035218 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14652 ,  H01L27/14689 ,  H01L27/14812 ,  H01L27/14831 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/1113

    摘要： A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film having a periodic array of holes.

    FIBER OPTIC COUPLER ARRAY
    7.
    发明公开
    FIBER OPTIC COUPLER ARRAY 审中-公开
    光纤耦合器

    公开(公告)号：EP2932320A1

    公开(公告)日：2015-10-21

    申请号：EP13861887.1

    申请日：2013-12-12

    申请人： Opel Solar, Inc. ,  University of Connecticut

    发明人： TAYLOR, Geoff, W. ,  ZHANG, Yan

    IPC分类号： G02B6/26 ,  G02B6/42 ,  G02B6/36

    CPC分类号： G02B6/305 ,  G02B6/1228 ,  G02B6/14 ,  G02B6/421 ,  G02B6/423 ,  G02B6/4249 ,  G02B6/4257

    摘要： An assemby includes optical fibers each having a waveguide core, a photonic integrated circuit (IC) that includes in-plane waveguides corresponding to the optical fibers, and a substrate bonded to the photonic IC with grooves that support the optical fibers. The substrate and photonic IC can have metal bumps that cooperate to provide mechanical bonding and electrical connections between the substrate and photonic IC. Portions of the optical fibers supported by the substrate grooves can define flat surfaces spaced from the optical fiber cores. The photonic IC can include passive waveguide structures with a first coupling section that interfaces to the flat surface of a corresponding optical fiber (for evanescent coupling of optical signals) and a second coupling section that interfaces to a corresponding in-plane waveguide (for adiabatic spot-size conversion of optical signals).