利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

16 条记录 (耗时 0.012 秒)

    Low-resistance salicide fill for trench capacitors
    2.
    发明公开
    Low-resistance salicide fill for trench capacitors 有权
    Verfahren zurSalizidfüllungmit Niedrigem WiderstandfürGrabenkondensatoren

    公开(公告)号：EP0967643A2

    公开(公告)日：1999-12-29

    申请号：EP99304729.9

    申请日：1999-06-17

    申请人： International Business Machines Corporation ,  SIEMENS AKTIENGESELLSCHAFT

    发明人： Gambino, Jeffrey P. ,  Gruening, Ulrike ,  Mandelman, Jack A. ,  Radens, Carl J.

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/10861

    摘要： Trench capacitors are fabricated utilizing a method which results in a refractory metal salicide as a component of the trench electrode in a lower region of the trench. The salicide-containing trench electrode exhibits reduced series resistance compared to conventional trench electrodes of similar dimensions, thereby enabling reduced ground rule memory cell leats and/or reduced cell access time. The trench capacitors of the invention are especially useful as components of DRAM memory cells.

    摘要翻译： 使用导致难熔金属硅化物作为沟槽的下部区域中的沟槽电极的部件的方法来制造沟槽电容器。 与具有类似尺寸的常规沟槽电极相比，含有自对接硅化物的沟槽电极显示出降低的串联电阻，从而能够减少接地规则存储器单元格和/或减少的单元访问时间。 本发明的沟槽电容器特别可用作DRAM存储单元的组件。

    Low-resistance salicide fill for trench capacitors
    4.
    发明公开
    Low-resistance salicide fill for trench capacitors 有权
    Salizidfüllungmit niedrigem WiderstandfürGrabenkondensatoren

    公开(公告)号：EP0967643A3

    公开(公告)日：2003-08-20

    申请号：EP99304729.9

    申请日：1999-06-17

    申请人： International Business Machines Corporation ,  SIEMENS AKTIENGESELLSCHAFT

    发明人： Gambino, Jeffrey P. ,  Gruening, Ulrike ,  Mandelman, Jack A. ,  Radens, Carl J.

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/10861

    摘要： Trench capacitors are fabricated utilizing a method which results in a refractory metal salicide (32) as a component of the trench electrode (26,32,34) in a lower region of the trench. The salicide-containing trench electrode exhibits reduced series resistance compared to conventional trench electrodes of similar dimensions, thereby enabling reduced ground rule memory cell leats and/or reduced cell access time. The trench capacitors of the invention are especially useful as components of DRAM memory cells.

    摘要翻译： 使用导致难熔金属硅化物作为沟槽的下部区域中的沟槽电极的部件的方法来制造沟槽电容器。 与具有类似尺寸的常规沟槽电极相比，含有自对接硅化物的沟槽电极显示出降低的串联电阻，从而能够减少接地规则存储器单元格和/或减少的单元访问时间。 本发明的沟槽电容器特别可用作DRAM存储单元的组件。

    Providing dual work function doping
    6.
    发明公开
    Providing dual work function doping 审中-公开
    Dotierung zur Erzielung einer doppelten Austrittsarbeit

    公开(公告)号：EP0929101A1

    公开(公告)日：1999-07-14

    申请号：EP98310525.5

    申请日：1998-12-21

    申请人： International Business Machines Corporation

    发明人： Bronner, Gary Bela ,  Gambino, Jeffrey P. ,  Mandelman, Jack A. ,  Radens, Carl J. ,  Tonti, William Robert

    IPC分类号： H01L21/8234 ,  H01L21/336 ,  H01L21/28 ,  H01L21/225

    CPC分类号： H01L21/28035 ,  H01L21/82345

    摘要： Dual work function doping is provided by doping a selected number of gate structures having self-aligned insulating layer on top of the structures through at least one side wall of the gate structures with a first conductivity type to thereby provide an array of gate structures whereby some are doped with the first conductivity type and others of the gate structures are doped with a second and different conductivity type. Also provided is an array of gate structures whereby the individual gate structures contain self-aligned insulating layer on their top portion and wherein some of the gate structures are doped with a first conductivity type and other of the gate structures are doped with a second and different conductivity type.

    摘要翻译： 通过在第一导电类型的栅极结构的至少一个侧壁上掺杂选择数量的具有自对准绝缘层的栅极结构的结构，从而提供栅极结构的阵列，从而提供一些栅极结构，从而提供双功能掺杂 掺杂有第一导电类型，并且其他栅极结构被掺杂有第二和不同的导电类型。 还提供了栅极结构的阵列，由此各个栅极结构在其顶部部分包含自对准绝缘层，并且其中一些栅极结构被掺杂有第一导电类型，并且其他栅极结构被掺杂有第二和不同的 导电类型。

    Process for producing transistors having independently adjustable parameters
    7.
    发明公开
    Process for producing transistors having independently adjustable parameters 审中-公开
    一种用于晶体管的与独立的可调参数的制造过程

    公开(公告)号：EP1071125A3

    公开(公告)日：2005-06-01

    申请号：EP00114376.7

    申请日：2000-07-05

    申请人： International Business Machines Corporation ,  Infineon Technologies AG

    发明人： Divakaruni, Rama ,  Gambino, Jeffrey P. ,  Mandelman, Jack ,  Rengarajan, Rajesh

    IPC分类号： H01L21/336 ,  H01L29/49 ,  H01L21/8238

    CPC分类号： H01L21/76897 ,  H01L21/76895 ,  H01L21/823807 ,  H01L29/66492 ,  H01L29/66537 ,  H01L29/66583

    摘要： The process rules for manufacturing semiconductor devices such as MOSFET's are modified to provide dual work-function doping following the customary gate sidewall oxidation step, greatly reducing thermal budget and boron penetration concerns. The concern of thermal budget is further significantly reduced by a device structure which allows a reduced gap aspect ratio while maintaining low sheet resistance values. A reduced gap aspect ratio also relaxes the need for highly reflowable dielectric materials and also facilitates the use of angled source-drain (S-D) and halo implants. Also provided is a novel structure and process for producing a MOSFET channel, lateral doping profile which suppresses short channel effects while providing low S-D junction capacitance and leakage, as well as immunity to hot-carrier effects. This also affords the potential for reduction in the contact stud-to-gate conductor capacitance, because borderless contacts can be formed with an oxide gate sidewall spacer. As a result, the S-D junctions can be doped independently of the gate conductor doping, more easily allowing a variety of MOSFET structures.

    Method of forming a doped silicon oxide film
    8.
    发明公开
    Method of forming a doped silicon oxide film 失效
    Herstellung einer dotierten Siliziumoxidschicht

    公开(公告)号：EP0817251A1

    公开(公告)日：1998-01-07

    申请号：EP97304053.8

    申请日：1997-06-11

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Ajmera, Atul C. ,  Gambino, Jeffrey P. ,  Nguyen, Son Van

    IPC分类号： H01L21/3105 ,  H01L21/316

    CPC分类号： H01L21/02271 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02211 ,  H01L21/31051 ,  H01L21/31625

    摘要： A process is provided for the low temperature deposition of a thin film of borophosphosilicate glass (BPSG) for use in semiconductor devices, such as DRAMs. The process includes utilizing R-OH groups as reagents to provide additional -OH groups so that an intermediate {Si(OH) 4 } n is formed having superior reflow properties, allowing the annealing and reflow steps to occur at temperatures less than 750°C, which is the current processing temperature.

    摘要翻译： 提供了用于半导体器件（例如DRAM）中的硼磷硅玻璃（BPSG）薄膜的低温沉积的工艺。 该方法包括使用R-OH基团作为试剂以提供额外的-OH基团，从而形成具有优异回流性能的中间体äSi（OH）4ün，使退火和回流步骤在低于750℃的温度下发生， 当前加工温度。

    Gate electrode for DRAM transistor
    9.
    发明公开
    Gate electrode for DRAM transistor 审中-公开
    Gate-Elektrode f DRAM DRAM

    公开(公告)号：EP1137063A2

    公开(公告)日：2001-09-26

    申请号：EP01302653.9

    申请日：2001-03-22

    申请人： Infineon Technologies North America Corp. ,  International Business Machines Corporation

    发明人： Rupp, Thomas S. ,  Gambino, Jeffrey P. ,  Hoh, Peter ,  Srinivasan, Senthil

    IPC分类号： H01L21/8242 ,  H01L27/108

    CPC分类号： H01L27/10873

    摘要： In one aspect, the present invention discloses a transistor device (see e.g., Figure 3) that includes first and second source/drain regions 124a and 126 disposed in a semiconductor body 122 and separated by a channel region 128a. A dielectric layer 134a overlies the channel region 128a and a gate electrode 130a/132a overlies the dielectric layer 134a. In the preferred embodiment, the gate electrode includes a polysilicon layer 130a that extends a first lateral distance over the dielectric layer and a silicide layer 132a that extends a second lateral distance over the first polysilicon layer. In this example, the first lateral distance is greater than the second lateral distance.

    摘要翻译： 本发明公开了一对相邻的DRAM单元（120a，120b）的晶体管器件（114a，114b），它包括设置在半导体本体（122）中的第一和第二源/漏区（124a和126） 通道区域（128a）。 电介质层（134a）覆盖在沟道区（128a）上，栅电极（130a / 132a）覆盖在电介质层（134a）上。 在优选实施例中，栅电极包括在电介质层上延伸第一横向距离的多晶硅层（130a）和在第一多晶硅层上延伸第二横向距离的硅化物层（132a）。 在该示例中，第一横向距离大于第二横向距离。 导体（132）和位线接触（142）之间的较大间隔减小了位线（160）和字线（130/132）之间的寄生电容。