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    THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ANNULAR ETCH-STOP SPACER AND METHOD OF MAKING THEREOF
    2.
    发明公开
    THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ANNULAR ETCH-STOP SPACER AND METHOD OF MAKING THEREOF 审中-公开

    公开(公告)号：EP3913671A1

    公开(公告)日：2021-11-24

    申请号：EP21181870.3

    申请日：2017-02-14

    申请人： SanDisk Technologies LLC

    发明人： NAKAMURA, Tadashi ,  TSUTSUMI, Masanori ,  FUNAYAMA, Kota ,  EHARA, Ryoichi ,  FURIHATA, Youko ,  ZHANG, Tong

    IPC分类号： H01L27/1157 ,  H01L27/11524 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792 ,  H01L27/11565 ,  H01L27/11582

    摘要： A monolithic three-dimensional memory device is disclosed herein. The device comprises a first alternating stack of first insulating layers 132 and first electrically conductive layers 146 located over a top surface of a substrate 10, an insulating cap layer 170A overlying the first alternating stack (132, 146), a second alternating stack of second insulating layers 232 and second electrically conductive layers 246 overlying the insulating cap layer 170A, and a memory stack structure 55 extending through the second alternating stack (232, 246), the insulating cap layer 170A and the first alternating stack (132, 146). The memory stack structure 55 comprises a semiconductor channel 60 and a memory film 50 including a plurality of charge storage regions. The insulating cap layer 170A comprises a first concave surface having a first radius of curvature R1, laterally surrounding the memory stack structure 55, and adjoined to an upper periphery of a substantially vertical sidewall of the memory stack structure 55, and the insulating cap layer 170A comprises a second concave surface having a second radius of curvature R2 that is greater than the first radius of curvature R1, laterally surrounding the memory stack structure 55, and adjoined to an upper periphery of the first concave surface.