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    MIT SIC BESCHICHTETE KÖRPER UND VERFAHREN ZUR HERSTELLUNG SIC-BESCHICHTETER KÖRPER
    1.
    发明公开
    MIT SIC BESCHICHTETE KÖRPER UND VERFAHREN ZUR HERSTELLUNG SIC-BESCHICHTETER KÖRPER 有权
    与SIC涂覆体，及其制造方法SIC-覆盖本体

    公开(公告)号：EP2414558A1

    公开(公告)日：2012-02-08

    申请号：EP10712725.0

    申请日：2010-03-17

    申请人： Spawnt Private S.à.r.l. ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

    发明人： ENDLER, Ingolf ,  HÖHN, Mandy ,  GEBEL, Thoralf ,  BAUCH, Christian ,  DELTSCHEW, Rumen ,  HOLL, Sven ,  LIPPOLD, Gerd ,  MOHSSENI-ALA, Seyed-Javad ,  AUNER, Norbert

    IPC分类号： C23C16/32 ,  C23C16/30

    CPC分类号： C23C16/325 ,  B32B18/00 ,  B82Y30/00 ,  C22C29/065 ,  C23C16/30 ,  Y10T428/264

    摘要： The invention relates to bodies, coated by a SiC hard material layer or by a layer system comprising at least one SiC hard material layer, and to a method for producing said type of coated bodies. The aim of the invention is to supply bodies with SiC layers that have a particle-free, non-porous structure, a high degree of hardness, low brittleness, high bond strength, good oxidation resistance and a high resistance to crack growth. According to the invention, the bodies are coated by a SiC layer or a multi-layer coating system comprising at least one SiC layer, wherein the SiC layer comprises nano-crystalline 3C-SiC comprising halogen or a mixed layer comprising nano-crystalline 3C-SiC comprising halogen and amorphous SiC or nano-crystalline 3C-SiC comprising halogen and amorphous carbon. The coating of said bodies is carried out in a thermal CVD process, wherein a gas mixture comprising H
    2 and/or one or more inert gases, one or more of the halogen polysilanes of the formulae Si
    n X
    2n , Si
    n X
    2n+2 , Si
    n X
    y H
    z , wherein X is the halogen and n ≥ 2 and one or more hydrocarbons is used. Alternatively according to the invention a gas mixture comprising one or more substituted halogen polysilanes having organic substitutes R of the general formulae Si
    n X
    y R
    z or Si
    n H
    x X
    y R
    z is used in H
    2 and/or one or more inert gases, wherein X is the halogen and n ≥ 2, z > 0, y ≥ 1. The stoichiometric ratios 2n+2 = y +z or 2n=y+z apply for Si
    n X
    y R
    z and the stochiometric ratios 2n+2 = x+y+z or 2n=x+y+z apply for Si
    n H
    x X
    y R
    z.

    CHLORIERTE OLIGOGERMANE UND VERFAHREN ZU DEREN HERSTELLUNG
    9.
    发明公开
    CHLORIERTE OLIGOGERMANE UND VERFAHREN ZU DEREN HERSTELLUNG 审中-公开

    公开(公告)号：EP2507299A2

    公开(公告)日：2012-10-10

    申请号：EP10787451.3

    申请日：2010-12-06

    申请人： Spawnt Private S.à.r.l.

    发明人： AUNER, Norbert ,  BAUCH, Christian ,  HOLL, Sven ,  DELTSCHEW, Rumen ,  MOHSSENI, Javad ,  LIPPOLD, Gerd ,  GEBEL, Thoralf

    IPC分类号： C08G79/00

    CPC分类号： C08G77/60 ,  C01B33/04 ,  C01G17/00 ,  C08G79/14 ,  Y02P20/582

    摘要： The invention relates to chlorinated oligogermanes as a pure compound or as a mixture of compounds, and to a method for the production thereof. The chlorinated oligogermanes as a pure compound or a mixture of compounds respectively comprise at least one direct bond Ge-Ge, the substituents comprise chlorine or chlorine and hydrogen and in the composition thereof, the atomic ratio of substituent to germanium is at least 1:1. The mixture has on average a ratio Ge:Cl of 1:2 - 1:3, or the pure compound has a ratio Ge:Cl of 1:2 - 1:2, 67, preferably 1:2, 2 - 1:2, 5, and the mixture has an average number of germanium atoms of 2 - 10.

    摘要翻译： 本发明涉及作为纯化合物或作为化合物混合物的氯化低聚锗酮及其生产方法。 作为纯化合物或化合物混合物的氯化低聚锗烯分别包含至少一个直接键Ge-Ge，取代基包含氯或氯和氢，并且在其组合物中，取代基与锗的原子比至少为1：1 。 该混合物平均具有1:2-1:3的比例Ge:Cl，或者该纯化合物具有1:2-1:2,67，优选1:2-2-1:2的Ge:Cl比例 ，5，并且混合物具有2-10的平均锗原子数。