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    BIAS CORRECTION FOR LITHOGRAPHY
    1.
    发明公开
    BIAS CORRECTION FOR LITHOGRAPHY 审中-公开
    光刻的偏差校正

    公开(公告)号：EP3264442A1

    公开(公告)日：2018-01-03

    申请号：EP17178472.1

    申请日：2017-06-28

    申请人： D2S, Inc.

    发明人： ZABLE, Harold Robert

    IPC分类号： H01J37/302 ,  H01J37/317 ,  G03F1/78 ,  G03F1/70 ,  G03F1/36 ,  G03F7/20

    摘要： Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.

    摘要翻译： 方法包括输入像素阵列，其中像素阵列中的每个像素具有像素剂量。 像素阵列表示要用多个图案曝光的表面上的剂量，多个图案中的每个图案具有边缘。 目标偏差是输入。 识别多个图案中的图案的边缘。 对于在所识别的边缘附近的每个像素，计算所计算的像素剂量，使得所识别的边缘由目标偏差重新定位。 输出具有计算的像素剂量的像素阵列。 还公开了用于执行该方法的系统。

    METHOD AND SYSTEM FOR FORMING PATTERNS WITH CHARGED PARTICLE BEAM LITHOGRAPHY
    2.
    发明公开
    METHOD AND SYSTEM FOR FORMING PATTERNS WITH CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
    方法和系统模式的生产中使用承载器射线光刻

    公开(公告)号：EP2724197A1

    公开(公告)日：2014-04-30

    申请号：EP12804558.0

    申请日：2012-06-19

    申请人： D2S, Inc.

    发明人： FUJIMURA, Akira ,  BORK, Ingo

    IPC分类号： G03F1/20 ,  H01L21/027

    CPC分类号： G03F7/2037 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/78 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  H01L21/027 ,  Y10S430/143

    摘要： In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (ß
    f ). At least some shots in the plurality of shots overlap other shots. In some embodiments, ß
    f is reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity to ß
    f expands the process window for the charged particle beam lithography process.

    摘要翻译： 在用于打碎或掩模数据准备或掩模工艺校正带电粒子束光刻的方法，拍摄的多元性是确定性的开采thatwill形式的表面，其中，镜头是确定性的开采，以减少所产生的图案的灵敏度的变化上的图案 波束模糊（测试版F）。 至少在镜头的多元性一些镜头重叠其他射击。 在一些实施方案中，β-f由在镜头的多元性控制拍摄的重叠量减少，要么在初始拍摄的确定，或在后处理步骤。 于βf显示降低的灵敏度扩展用于带电粒子束光刻工艺的工艺窗口。

    METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING CHARACTER PROJECTION LITHOGRAPHY
    3.
    发明公开
    METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING CHARACTER PROJECTION LITHOGRAPHY 审中-公开
    方法光学邻近校正设计及制造字符投影光刻线程CROSS生产资料

    公开(公告)号：EP2321701A2

    公开(公告)日：2011-05-18

    申请号：EP09810440.9

    申请日：2009-08-10

    申请人： D2S, Inc.

    发明人： FUJIMURA, Akira ,  GLASSER, Lance ,  MITSUHASHI, Takashi ,  HAGIWARA, Kazuyuki

    IPC分类号： G03F7/20 ,  H01L21/027 ,  G03F1/16

    CPC分类号： G03F7/2037 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/68 ,  H01J37/3174

    摘要： A method and system for manufacturing a surface having a multiplicity of slightly different patterns is disclosed. The method comprises using a stencil mask having a set of characters for forming the patterns on the surface and reducing shot count or total write time by use of a character varying technique. Application of such a method to fracturing, mask data preparation, or proximity effect correct is also disclosed. A method for optical proximity correction of a design of a pattern on a surface is also disclosed, comprising inputting desired patterns for the substrate and inputting a set of characters, some of which are complex characters, that may be used to form the pattern on the surface. A method of creating glyphs is also disclosed.

    摘要翻译： 一种用于制造具有大量微小差别图案的多个表面的方法和系统游离缺失盘。 该方法包括使用具有一组字符的表面上形成图案和通过使用字符改变技术的减少拍数或总写入时间模板掩模。 寻求压裂，掩模数据准备，或邻近效应正确gibt游离缺失盘的方法中的应用。 包括输入希望的图形的基板和输入一组字符，其中的一些是复杂字符，也可使用一种用于在表面gibt盘上的图案游离缺失，的设计的光学邻近校正的方法，以在该图案 表面。 创建字形gibt游离缺失盘的方法。

    BIAS CORRECTION FOR LITHOGRAPHY
    4.
    发明公开
    BIAS CORRECTION FOR LITHOGRAPHY 审中-公开

    公开(公告)号：EP3654361A3

    公开(公告)日：2020-07-29

    申请号：EP19214083.8

    申请日：2017-06-28

    申请人： D2S, Inc.

    发明人： ZABLE, Harold Robert

    IPC分类号： H01J37/302 ,  H01J37/317 ,  G03F1/78 ,  G03F1/70 ,  G03F1/36 ,  G03F7/20

    摘要： Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.

    Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
    6.
    发明公开
    Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography 审中-公开
    利用带电粒子束光刻的曲线特征来压裂和形成图案的方法

    公开(公告)号：EP2302659A2

    公开(公告)日：2011-03-30

    申请号：EP10173794.8

    申请日：2010-08-24

    申请人： D2S, Inc.

    发明人： Fujimura, Akira ,  Tucker, Michael

    IPC分类号： H01J37/317 ,  G03F1/14 ,  G03F7/20

    CPC分类号： G06F17/5081 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F1/78 ,  G03F7/2061 ,  G06F17/5045 ,  H01J37/3026 ,  H01J37/3174 ,  Y10S430/143

    摘要： In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed.

    摘要翻译： 在使用成形带电粒子束光刻的半导体生产领域中，公开了一种用于压裂或掩模数据准备或邻近效应校正的方法和系统，其中为带电粒子束写入器系统确定一系列曲线字符投射照射，使得 该组镜头可以在表面上形成可能具有变化宽度的连续轨道。 还公开了一种使用一系列曲线字符投影镜头在表面上形成连续轨迹的方法。 还公开了通过使用一系列曲线字符投影镜头在表面上形成连续轨道来制造光罩和用于制造诸如硅晶片的基板的方法。

    METHOD AND SYSTEM FOR LOGIC DESIGN FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY
    7.
    发明公开
    METHOD AND SYSTEM FOR LOGIC DESIGN FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY 审中-公开
    方法和系统逻辑设计粒子射线刻制单元投影

    公开(公告)号：EP2095279A1

    公开(公告)日：2009-09-02

    申请号：EP07871641.2

    申请日：2007-11-29

    申请人： D2S, Inc.

    发明人： FUJIMURA, Akira ,  MITSUHASHI, Takashi ,  YOSHIDA, Kenji

    IPC分类号： G06F17/50

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20

    摘要： A method for particle beam lithography, such as electron beam (EB) lithography, includes predefining a stencil design having a plurality of cell patterns with information from a cell library, fabricating the stencil design, synthesizing a functional description into a logic circuit design after predefining the stencil design so that one or more characteristics of the stencil design are considered during synthesizing of the functional description into the logic circuit design, optimizing the logic circuit design, generating a layout design from the optimized logic circuit design, and forming the logic circuit on a substrate according to the stencil design and the layout design.