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公开(公告)号：EP4380322A1
公开(公告)日：2024-06-05
申请号：EP23386006.3
申请日：2023-01-31
申请人： Prisma Ilektronika A.V.E.E. With d.t. "Prisma Electronics S.A." , National Technical University of Athens
发明人： Giordamlis, Christos , Zergioti, Ioanna , Makrygianni, Marina , Zaharatos, Filimon , Theodorakos, Ioannis
CPC分类号： H05K1/0269 , H05K3/1216 , H05K3/3485 , H05K3/0008 , H05K2203/033820130101 , H05K2203/052820130101 , H05K2203/10720130101 , H05K2203/16320130101 , H05K2203/16620130101 , H05K2203/012620130101 , H05K2201/0991820130101 , B23K2101/4220180801 , B23K1/0016 , B23K1/0056 , B23K3/0607
摘要： The invention relates to a method for pattern recognition to assemble printed circuit boards by digital printing and a system for implementing the method. In the method, pattern recognition methods are applied to extract information from the imaging of the printed circuit board, thereby automating the printing of the targeted object on the board. The method consists of the digital printing of a material that is uniformly coated on a transparent donor substrate and placed in parallel to a receiver substrate. A laser pulse irradiates the donor substrate resulting in the detachment and printing of part of the material on the receiver. This particular method allows to minimize the time of the overall process, with high alignment accuracy and high printing resolution.
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公开(公告)号：EP4380323A3
公开(公告)日：2024-09-25
申请号：EP24170624.1
申请日：2015-10-19
申请人： Orbotech Ltd.
发明人： ZENOU, Michael , KOTLER, Zvi
IPC分类号： H01L21/285 , H01L21/48 , H01L31/0224 , C23C14/28 , C23C14/48 , H05K3/14 , B23K26/0622
CPC分类号： H05K3/14 , H05K2203/052820130101 , H05K2203/10720130101 , H05K2203/12820130101 , H01L21/4846 , H01L21/2855 , C23C14/048 , C23C14/28 , B23K26/0006 , B23K26/0861 , B23K26/123 , B23K26/34 , B23K26/1224 , B23K26/0624 , B23K2101/4020180801 , B23K2103/5620180801 , H01L31/022425 , C23C14/04 , C23C14/48
摘要： An apparatus for material deposition, comprising a transparent donor substrate having deposited thereon a donor film comprising a metal with a thickness less than 2 µm. The apparatus further comprising a positioning assembly, which is configured to position the donor substrate in proximity to an acceptor substrate comprising a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate; and an optical assembly, which is configured to direct pulses of laser radiation, having a pulse duration less than 2 ns, to impinge on the donor substrate so as to cause droplets of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace in ohmic contact with the semiconductor material.
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公开(公告)号：EP4151057B1
公开(公告)日：2024-08-07
申请号：EP21727005.7
申请日：2021-05-12
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4.发明授权
公开(公告)号：EP4133911B1
公开(公告)日：2024-06-12
申请号：EP21717579.3
申请日：2021-04-01
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公开(公告)号：EP3207772B1
公开(公告)日：2024-04-17
申请号：EP15852999.0
申请日：2015-10-19
IPC分类号： H01L21/285 , H01L21/48 , H01L31/0224 , C23C14/28 , C23C14/48 , H05K3/14
CPC分类号： C23C14/04 , C23C14/48 , H01L21/2855 , H01L21/4846 , H01L31/022425 , H05K3/14 , H05K2203/052820130101 , H05K2203/10720130101 , H05K2203/12820130101
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公开(公告)号：EP4424120A1
公开(公告)日：2024-09-04
申请号：EP22829904.6
申请日：2022-12-14
申请人： REOPHOTONICS, LTD.
发明人： GILAN, Ziv , ZENOU, Michael , NESHER, Guy
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7.发明公开
公开(公告)号：EP4400625A1
公开(公告)日：2024-07-17
申请号：EP23151545.3
申请日：2023-01-13
IPC分类号： C23C14/04 , C23C14/54 , C23C14/26 , C23C14/28 , C23C14/16 , C23C14/08 , B33Y10/00 , B33Y30/00 , B29C64/00 , H05K3/04 , H01L21/26 , H01L23/00 , B23K26/00 , H05K1/09 , H05K3/40
CPC分类号： B33Y30/00 , B33Y10/00 , H05K3/046 , H05K2203/052820130101 , H05K2203/110520130101 , H05K2203/033820130101 , H05K2203/06620130101 , H05K3/403 , H05K1/097 , H01L24/00 , B23K26/00 , H01L33/0095 , B29C64/141 , B29C64/268
摘要： A deposition apparatus (1) for depositing materials (Ma, Mb, ..., Mn) on a target (T) is provided herein. The apparatus is configured to initiate ejection of a material portion from an ejection position of a donor plate (2) at a point in time that a spatial vector defined between the deposition position (ps) and the ejection position (pe) corresponds to a movement of the donor plate (2) relative to the target (T). Also a corresponding deposition method is provided.
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公开(公告)号：EP4140262B1
公开(公告)日：2024-07-17
申请号：EP21722582.0
申请日：2021-04-23
CPC分类号： H05K3/207 , H05K3/1275 , H05K1/095 , H05K1/092 , H05K2203/011320130101 , H05K2203/013920130101 , H05K2203/012620130101 , H05K2203/052220130101 , H05K2203/052820130101 , H05K2203/078320130101 , H05K2203/08320130101 , H05K2203/013420130101 , H05K3/1258 , H05K2203/110520130101 , H05K2203/111520130101
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公开(公告)号：EP4380323A2
公开(公告)日：2024-06-05
申请号：EP24170624.1
申请日：2015-10-19
申请人： Orbotech Ltd.
发明人： ZENOU, Michael , KOTLER, Zvi
IPC分类号： H05K3/14
CPC分类号： H05K3/14 , H05K2203/052820130101 , H05K2203/10720130101 , H05K2203/12820130101 , H01L21/4846 , H01L21/2855 , C23C14/048 , C23C14/28 , B23K26/0006 , B23K26/0861 , B23K26/123 , B23K26/34 , B23K26/1224 , B23K26/0624 , B23K2101/4020180801 , B23K2103/5620180801 , H01L31/022425 , C23C14/04 , C23C14/48
摘要： An apparatus for material deposition, comprising a transparent donor substrate having deposited thereon a donor film comprising a metal with a thickness less than 2 µm. The apparatus further comprising a positioning assembly, which is configured to position the donor substrate in proximity to an acceptor substrate comprising a semiconductor material with the donor film facing toward the acceptor substrate and with a gap of at least 0.1 mm between the donor film and the acceptor substrate; and an optical assembly, which is configured to direct pulses of laser radiation, having a pulse duration less than 2 ns, to impinge on the donor substrate so as to cause droplets of the metal to be ejected from the donor layer and land on the acceptor substrate, thereby forming a circuit trace in ohmic contact with the semiconductor material.
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