摘要:
A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the spin-orbit torque wiring extends in a second direction intersecting the first direction, and the spin-orbit torque wiring is bonded to a first surface of the first ferromagnetic metal layer, wherein the spin-orbit torque wiring includes a pure spin current generator which is bonded to the first ferromagnetic metal layer, and a low-resistance portion which is connected to each of both ends of the pure spin current generator in the second direction and is formed of a material having a smaller electrical resistivity than the pure spin current generator, and the pure spin current generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.
摘要:
An antenna device includes: antennas (1); magnetic oscillation element units (2) converting electrical energy to high-frequency power; and a modulator (6) outputting electrical energy input from outside to at least two magnetic oscillation element units, with a time difference to differentiate phases of high-frequency power converted from electrical energy by at least two magnetic oscillation element units (2-1, 2-2). The magnetic oscillation element units respectively include a pair of electrodes (11, 18), and further include, between the pair of electrodes, a PIN layer (14), a free layer (16), and an intermediate layer (15). A resistance value of an element configured by the PIN, free and intermediate layers changes according to the angle between the magnetization direction of the PIN layer and the magnetization direction of the free layer. The antennas transmit electromagnetic waves to open space outside the magnetic oscillation element units with the supply of high-frequency power.
摘要:
A Josephson junction has a Si substrate (1), a two layer film comprising an amorphous MgO layer (2) and a high orientation MgO layer (3) on the Si substrate, and a NbN film or the NbCN film (7) laminated on the two layer film.