公开(公告)号：EP1404903B1

公开(公告)日：2006-03-29

申请号：EP02751008.0

申请日：2002-06-10

申请人： Aixtron AG

发明人： SCHWAMBERA, Markus ,  FRANKEN, Walter ,  STRAUCH, Gerd

IPC分类号： C30B25/12 ,  C23C16/458 ,  C30B25/14 ,  C23C16/455 ,  C30B25/02

CPC分类号： C23C16/45574 ,  C23C16/45563 ,  C23C16/4584 ,  C30B25/02 ,  C30B25/12 ,  C30B25/14

摘要： The invention relates to a method for the deposition of, in particular crystalline layers on a substrate lying on rotating substrate holders (2) in a process chamber (1). The substrate holders (2) are arranged around the centre of a rotating substrate holder support. Said substrate holder support (3) forms a process chamber base (4) together with the substrate holders (2), which is opposite a process chamber cover (5) with a central gas inlet device (6), through which, together with a carrier gas, one or several gaseous starting materials may be introduced into a decomposition zone, arranged above a heated central region (4') of the process chamber floor (4), surrounded by a diffusion zone (4''), from which the decomposition products are transported radially outwards in the carrier gas stream to the substrate. According to the invention, the supply of decomposition products to the substrate may be equilibrated, whereby the central region (4') of the process chamber base (4) is rotated relative to the substrate holder support (3) and to the process chamber cover (5) or the gas inlet device (6).

公开(公告)号：EP1337700B1

公开(公告)日：2005-08-24

申请号：EP01978454.5

申请日：2001-10-25

申请人： Aixtron AG

发明人： KÄPPELER, Johannes ,  WISCHMEYER, Frank ,  BERGE, Rune

IPC分类号： C30B25/10 ,  C30B25/14

CPC分类号： C30B25/12 ,  C23C16/4584 ,  Y10S117/901

摘要： The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber (2) arranged in a reactor housing (1) where the floor (3) thereof, comprises at least one substrate holder (6) which is rotatably driven by a gas flow flowing in a feed pipe (5) associated with said floor. Said substrate holder is disposed in a bearing cavity (4) on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity (4) is associated with a tray-shaped element (8) arranged below the outflow (7) of the feed pipe (5).

公开(公告)号：EP1335997B1

公开(公告)日：2005-06-29

申请号：EP01983565.1

申请日：2001-10-25

申请人： Aixtron AG

发明人： KÄPPELER, Johannes

IPC分类号： C30B25/14 ,  C30B25/16 ,  C30B25/10 ,  C23C16/458

CPC分类号： C23C16/46 ,  C23C16/4584 ,  C30B25/10 ,  C30B25/14 ,  C30B25/16 ,  C30B25/165

摘要： The invention relates to a method for controlling the surface temperatures of substrates arranged on substrate supports borne by a substrate support carrier on dynamic gas cushions in a processing chamber of a CVD-reactor. The aim of the invention is to reduce or adjust the temperature variations. According to the invention, an average surface temperature value (T1-T5) is calculated, being measured in a particularly optical manner, and the level of the gas cushions (8) is regulated by varying the individually controlled gas flow producing the gas cushions in such a way that the variations of the measured surface temperatures (T1 - T5) in relation to the average value lies within a predetermined temperature window (TU, TL).

公开(公告)号：EP1523585A2

公开(公告)日：2005-04-20

申请号：EP03764944.9

申请日：2003-07-07

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  KÄPPELER, Johannes ,  FRANKEN, Walter

IPC分类号： C23C16/458 ,  H01L21/00

CPC分类号： H01L21/68764 ,  C23C14/56 ,  C23C16/4585 ,  C23C16/54 ,  H01L21/67754 ,  H01L21/68707 ,  H01L21/68771

摘要： The invention relates to a device for loading at least one substrate (1) into a process chamber of a coating unit and unloading the at least one substrate (1) therefrom by means of a gripper (2) of a handling machine. The inventive device comprises a loading plate (3) which can be gripped by the gripper (2) and embodies a storage place for each at least one substrate (1), said storage place being formed by an edge (4) of an opening (5) that is assigned to each substrate (1). The inventive device also comprises a substrate holder (7) that is provided with a pedestal-type substrate support which is adapted to the loading plate (3) and on which the substrate plate can be placed such that some sectors of the surface of the substrate support are located at a certain gap distance from the substrate or the substrate lies in a planar manner on a sector of the surface.

公开(公告)号：EP1459362A2

公开(公告)日：2004-09-22

申请号：EP02790389.7

申请日：2002-11-16

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  KROST, Alois ,  DADGAR, Armin

IPC分类号： H01L21/20 ,  H01L33/00 ,  C30B25/02 ,  H01L21/762

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02455 ,  H01L21/02463 ,  H01L21/02538 ,  H01L21/0262

摘要： The invention relates to a method for depositing thick III-V semiconductor layers on a non-III-V substrate, particularly a silicon substrate, by introducing gaseous starting materials into the process chamber of a reactor. The aim of the invention is to carry out the crystalline deposition of thick III-V semiconductor layers on a silicon substrate without the occurrence of unfavorable lattice distortions. To this end, the invention provides that a thin intermediate layer is deposited at a reduced growth temperature between two III-V layers.

公开(公告)号：EP1404903A1

公开(公告)日：2004-04-07

申请号：EP02751008.0

申请日：2002-06-10

申请人： Aixtron AG

发明人： SCHWAMBERA, Markus ,  FRANKEN, Walter ,  STRAUCH, Gerd

IPC分类号： C30B25/12 ,  C23C16/458 ,  C30B25/14 ,  C23C16/455 ,  C30B25/02

CPC分类号： C23C16/45574 ,  C23C16/45563 ,  C23C16/4584 ,  C30B25/02 ,  C30B25/12 ,  C30B25/14

摘要： The invention relates to a method for the deposition of, in particular crystalline layers on a substrate lying on rotating substrate holders (2) in a process chamber (1). The substrate holders (2) are arranged around the centre of a rotating substrate holder support. Said substrate holder support (3) forms a process chamber base (4) together with the substrate holders (2), which is opposite a process chamber cover (5) with a central gas inlet device (6), through which, together with a carrier gas, one or several gaseous starting materials may be introduced into a decomposition zone, arranged above a heated central region (4') of the process chamber floor (4), surrounded by a diffusion zone (4''), from which the decomposition products are transported radially outwards in the carrier gas stream to the substrate. According to the invention, the supply of decomposition products to the substrate may be equilibrated, whereby the central region (4') of the process chamber base (4) is rotated relative to the substrate holder support (3) and to the process chamber cover (5) or the gas inlet device (6).

公开(公告)号：EP1393360A1

公开(公告)日：2004-03-03

申请号：EP02730281.9

申请日：2002-05-25

申请人： Aixtron AG

发明人： STRAUCH, Gerd

IPC分类号： H01L21/268 ,  H01L21/00 ,  H01L21/324

CPC分类号： H01L21/67109 ,  B01F3/026 ,  B01F15/00142 ,  B01F15/00344 ,  B01F15/06 ,  F28F13/02

摘要： The invention relates to a method and a device for the thermal treatment, especially short-term, of flat objects in particular, such as semi-conductor, glass or metal substrates. Heat is, at least in part, supplied to or taken away from both sides of said substrates by means of thermal conduction via a thermal conduction medium. The invention aims to improve the method and device so that they can be used effectively. To this end, a mixture consisting of two gases, differing greatly in their thermal conductivity, is used as a thermal conduction medium. The mixture on both sides of the substrate (1) is individually adjusted so that the respective surface temperature is time-controlled by taking the respective heat exchange due to heat radiation into account.

公开(公告)号：EP1343926A1

公开(公告)日：2003-09-17

申请号：EP01984799.5

申请日：2001-12-01

申请人： Aixtron AG

发明人： DAUELSBERG, Martin

IPC分类号： C30B25/14 ,  C23C16/44

CPC分类号： C23C16/45508 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/4584 ,  C30B25/14

摘要： The invention relates to a method and a device for depositing especially crystalline layers on especially crystalline substrates in a process chamber (1) of a reactor housing having a water-cooled wall (2). The floor (3) of said process chamber (1) is heated. At least one reaction gas as a process gas, and hydrogen as a carrier gas, are centrally introduced into the process chamber, and are extracted by a gas evacuation ring (5) surrounding the process chamber (1). A flush gas (7) flows between the cover of the reactor (6) and the cover of the process chamber (4). Said flush gas and the flush gas (8) which flushes the area (12) between the reactor wall (2) and the gas evacuation ring (5) are introduced into the outer region (1') of the process chamber (1), via a gap (9) between the cover of the reactor (4) and the gas evacuation ring (5) which can be lowered for loading the process chamber (1), in order to be sucked through the openings (11) in the gas evacuation ring (54) with the process gas (10). The gas which flushes the region (12) between the reactor wall (2) and the gas evacuation ring (5) is nitrogen or a mixture of hydrogen and nitrogen.

公开(公告)号：EP1325177A1

公开(公告)日：2003-07-09

申请号：EP01980316.2

申请日：2001-08-31

申请人： Aixtron AG

发明人： STRAUCH, Gerd ,  REINHOLD, Markus

IPC分类号： C30B25/14 ,  C23C16/455

CPC分类号： C23C16/45508 ,  C23C16/45568 ,  C23C16/45576 ,  C23C16/4558 ,  C30B25/14

摘要： The invention relates to a method and to a device for carrying out the method for depositing, in particular, crystalline layers on substrates that are also, in particular, crystalline. According to the invention, at least two process gases are introduced separate from one another into a process chamber (1) of a reactor, whereby the first process gas flows through a central line (2) having a central outlet opening (3), and the second process gas flows through a line, which is peripheral thereto and which has a peripheral outlet opening. The second process gas flows through one or more supply lines (5) and into a mixing chamber (4) and flows through additional means, which influence the gas stream and which are provided for homogenizing the radial flow profile of the process gas exiting the peripheral outlet opening. The aim of the invention is to obtain a homogeneous radial flow profile by using simple means. To this end, the invention provides that the second process gas flows through a flow influencing element, which is situated downstream from the mixing chamber (4) and which is provided, in particular, in the form of an annular throttle (7) or of a turbulence generator, and flows through an annular pre-chamber situated downstream therefrom, after which said second process gas exits through a gas-permeable gas outlet ring (6).

公开(公告)号：EP1320636A1

公开(公告)日：2003-06-25

申请号：EP01974282.4

申请日：2001-09-22

申请人： Aixtron AG

发明人： JÜRGENSEN, Holger ,  STRAUCH, Gerd ,  SCHWAMBERA, Markus

IPC分类号： C23C16/448 ,  C23C16/455

CPC分类号： C23C14/228 ,  C23C14/12 ,  C23C14/185 ,  C23C16/4402 ,  C23C16/4481 ,  Y10T117/1004 ,  Y10T117/1008

摘要： The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor (1), a non-gaseous starting material (3) that is stored in a source (I) in the form of a container (2) is transported from said source (I) to a substrate (II) by a carrier gas (4) in gaseous form (5) and is deposited on said substrate (II). The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefor provides that the preheated (6) carrier gas (4) washes through the starting material (3) from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated (7) container walls (13).