公开(公告)号：EP2436090A1

公开(公告)日：2012-04-04

申请号：EP10780346.2

申请日：2010-03-15

申请人： Ricoh Company Ltd.

发明人： SHOUJI, Hiroyoshi ,  SATO, Shunichi ,  ITOH, Akihiro ,  HARASAKA, Kazuhiro

IPC分类号： H01S5/183

CPC分类号： B32B37/14 ,  H01S5/0282 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/3202 ,  H01S5/423

摘要： A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.

公开(公告)号：EP2086076A3

公开(公告)日：2011-02-02

申请号：EP09158504.2

申请日：2008-02-25

申请人： Nichia Corporation

发明人： Michiue, Atsuo ,  Morizumi, Tomonori ,  Takahashi, Hiroaki

IPC分类号： H01S5/028 ,  H01S5/10

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0267 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0283 ,  H01S5/2201 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor laser element having a first nitride semiconductor layer (11), an active layer (12), a second nitride semiconductor layer (13), a first protective film (25) in contact with a cavity end face of the nitride semiconductor laser, and a second protective film (26) formed on the first protective film (25), wherein the second protective film (26) has a thick part protruding from a face on the cavity end face side and from a face opposite the cavity end face.

公开(公告)号：EP2223397A1

公开(公告)日：2010-09-01

申请号：EP08865674.9

申请日：2008-12-17

申请人： OSRAM Opto Semiconductors GmbH

发明人： LELL, Alfred ,  EICHLER, Christoph ,  SCHMID, Wolfgang ,  TAUTZ, Sönke ,  REILL, Wolfgang ,  DINI, Dimitri

IPC分类号： H01S5/028 ,  H01S5/22

CPC分类号： H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

摘要： A laser light source especially comprises a semiconductor layer sequence (10) having an active zone (45) and a radiation output surface (12) with a first section (121) and a second section (122), which is different therefrom, and a filter structure (5). When operating, the active zone (45) produces coherent first electromagnetic radiation (51) of a first wavelength range and incoherent second electromagnetic radiation (52) of a second wavelength range. The coherent first electromagnetic radiation (51) is emitted in a direction of emission (90) by the first section (121). The incoherent second electromagnetic radiation (51) is emitted by the first section (121) and the second section (122). The second wavelength range comprises the first wavelength range. The filter structure (5) at least partially attenuates the incoherent second electromagnetic radiation (52) emitted by the active zone along the direction of emission.

公开(公告)号：EP1903646A3

公开(公告)日：2009-09-09

申请号：EP07253681.6

申请日：2007-09-18

申请人： JDS Uniphase Corporation

发明人： Peters, Matthew Glenn ,  Rossin, Victor ,  Zucker, Erik Paul

IPC分类号： H01S5/16 ,  H01S5/042 ,  H01S5/028

CPC分类号： H01S5/16 ,  H01S5/0282 ,  H01S5/0425 ,  H01S5/1053 ,  H01S5/164 ,  H01S5/168

摘要： The invention relates to a semiconductor laser diode structure with increased catastrophic optical damage (COD) power limit, featuring three sections, sometimes called windows, at the output facet of the diode. These include an optically transparent section (53), a current blocking section (54) and a partially current blocking section (55).

公开(公告)号：EP2048752A3

公开(公告)日：2009-05-27

申请号：EP08172037.7

申请日：2006-07-31

申请人： Nichia Corporation

发明人： Ochiai, Masanao ,  Yuasa, Koji

IPC分类号： H01S5/028

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/16 ,  H01S5/34333

摘要： A semiconductor laser device, which has a protective film at an end surface thereof, is adaptable to demands for higher outputs or shorter wavelengths. The semiconductor laser device according to the present invention includes a dielectric film (110) on at least one end surface of an optical resonator (300), in which the dielectric film includes a first dielectric layer (111) and a second dielectric layer (112) comprised of the same elements and disposed in sequence from the end surface side of the semiconductor, the first dielectric layer including a layer made of a single crystal material and the second dielectric layer including a layer made of an amorphous material.

公开(公告)号：EP1748524B1

公开(公告)日：2009-02-25

申请号：EP06015927.4

申请日：2006-07-31

申请人： Nichia Corporation

发明人： Ochiai, Masanao ,  Yuasa, Koji

IPC分类号： H01S5/028

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/16 ,  H01S5/34333

公开(公告)号：EP1903646A2

公开(公告)日：2008-03-26

申请号：EP07253681.6

申请日：2007-09-18

申请人： JDS Uniphase Corporation

发明人： Peters, Matthew Glenn ,  Rossin, Victor ,  Zucker, Eric Paul

IPC分类号： H01S5/028

CPC分类号： H01S5/16 ,  H01S5/0282 ,  H01S5/0425 ,  H01S5/1053 ,  H01S5/164 ,  H01S5/168

摘要： The invention relates to a semiconductor laser diode structure with increased catastrophic optical damage (COD) power limit, featuring three sections, sometimes called windows, at the output facet of the diode. These include an optically transparent section (53), a current blocking section (54) and a partially current blocking section (55).

摘要翻译： 本发明涉及具有增加的灾难性光学损伤（COD）功率限制的半导体激光二极管结构，其特征在于在二极管的输出端具有三个部分，有时称为窗口。 这些包括光学透明部分（53），电流阻挡部分（54）和局部电流阻挡部分（55）。

公开(公告)号：EP1748524A1

公开(公告)日：2007-01-31

申请号：EP06015927.4

申请日：2006-07-31

申请人： Nichia Corporation

发明人： Ochiai, Masanao, c/o Nichia Corporation ,  Yuasa, Koji, c/o Nichia Corporation

IPC分类号： H01S5/028

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/16 ,  H01S5/34333

摘要： A semiconductor laser device, which has a protective film at an end surface thereof, is adaptable to demands for higher outputs or shorter wavelengths. The semiconductor laser device according to the present invention includes a dielectric film (110) on at least one end surface of an optical resonator (300), in which the dielectric film includes a first dielectric layer (111) and a second dielectric layer (112) comprised of the same elements and disposed in sequence from the end surface side of the semiconductor, the first dielectric layer including a layer made of a single crystal material and the second dielectric layer including a layer made of an amorphous material.

摘要翻译： 在其端面具有保护膜的半导体激光器件适用于对更高输出或更短波长的要求。 根据本发明的半导体激光器件包括在光学谐振器（300）的至少一个端面上的电介质膜（110），其中电介质膜包括第一电介质层（111）和第二电介质层（112 ）由相同的元素构成，并且从半导体的端面侧依次设置，第一介电层包括由单晶材料制成的层，第二介电层包括由非晶材料制成的层。

公开(公告)号：EP1406360A4

公开(公告)日：2006-05-03

申请号：EP02733264

申请日：2002-05-31

申请人： NICHIA CORP

发明人： SUGIMOTO YASUNOBU ,  OCHIAI MASANAO ,  YONEDA AKINORI

IPC分类号： H01S5/028 ,  H01S5/10 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1082 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/18

摘要： A semiconductor laser element which can provide a good FFP free from ripple and close to a Gaussian distribution, and which is provided with a laminate structure that is formed by sequentially laminating a first conductive type semiconductor layer, an active layer, and a second conductive type (different from the first conductive type) semiconductor layer and that has a waveguide area for guiding light in one direction and a laser-resonating resonator surfaces at the opposite ends thereof, wherein the laminate structure has at one end thereof a non-resonator surface separate from the resonator surfaces and formed so as to include an active layer sectional surface, and the active layer sectional surface of the non-resonator surface is covered with a light shielding layer.

摘要翻译： 本发明提供一种半导体激光元件，该半导体激光元件能够提供没有波纹并且接近高斯分布的良好的FFP，并且设置有层叠结构，该层叠结构通过依次层叠第一导电型半导体层，有源层和第二导电型层 （不同于第一导电类型）半导体层，并且具有用于沿一个方向引导光的波导区域和在其相对端处的激光谐振谐振器表面，其中该层叠结构在其一端具有非谐振器表面分离 从谐振器表面形成并且形成为包括有源层截面，并且非谐振器表面的有源层截面表面被遮光层覆盖。

公开(公告)号：EP1421631A1

公开(公告)日：2004-05-26

申请号：EP02759025.6

申请日：2002-08-09

申请人： Comlase AB

发明人： LINDSTRÖM, Karsten, V., L. ,  BLIXT, Peter, N. ,  SÖDERHOLM, Svante, H. ,  KRUMMENACHER, Laurent ,  SILFVENIUS, Christofer ,  SRINIVASAN, Anand ,  CARLSTRÖM, Carl-Fredrik

IPC分类号： H01L33/00 ,  H01S5/00

CPC分类号： H01S5/028 ,  H01S5/0202 ,  H01S5/0282 ,  H01S5/12 ,  H01S5/18 ,  H01S5/2081 ,  H01S5/2214

摘要： The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum. Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.