摘要:
A silicon carbide growth container for placement into a crystal growing furnace. The growth container has a liner of pyrolytic graphite which seals the inside of the container and allows for easy removal of the grown silicon carbide crystal.
摘要:
An apparatus and method for reducing particles in reactors. The apparatus (10) includes an enclosure for processing the semiconductor wafers. The enclosure has a wafer handling chamber (16) connected by an isolation gate valve (18) to a processing chamber (20). Additionally, the apparatus includes: pipes (24, 26) for delivering a purge gas into the wafer handling chamber (16); a pilot operated back pressure regulator (40) for regulating the delivery and removal of the purge gas from the enclosure for reducing disturbances from the purge gas entering into the enclosure; a flow regulated Bernoulli wand (36) for lifting and holding a single wafer; ionizers (21a-21d) in the purge gas lines entering the wafer handling chamber and load locks for ionizing the purged gas molecules, the ionized gas discharges all the static inside the semiconductor equipment and prevents the wafer from attracting charged particles; and means for reducing gas flow turbulence when switching valves within the reactor.
摘要:
This invention is a sublimating and cracking apparatus for producing a beam of molecules to be deposited on a substrate, and an apparatus which is particularly useful with phosphorus as the source material. In the phosphorus effusion cell of this invention, a vacuum jacket (10) encloses and supports a red phosphorus crucible (12), a condensing crucible for white phosphorus (14) and a connecting tube (16) within a vacuum space (19). In use, red phosphorus is first transformed and deposited as white phosphorus in the condensing chamber. The white phosphorus is then directed to a cracker section (20) where it is cracked and subsequently directed to the substrate.
摘要:
A molecular beam epitaxy effusion cell for growing epitaxial layers upon a semiconductor substrate by control of a collimated beam of molecules generated from a source material in a high vacuum environment in order to control the hyper abrupt stoichiometry of the effusion flux. A heated control assembly is used to control the size of the exit openings of the effusion cell. The control assembly comprises a boroelectric heating member such as a grating having a plurality of holes and a perforated cover which are adjustable relative to one another. The grating includes an internal heating element.
摘要:
Disclosed is a crucible of pyrolytic boron nitride (PBN) for molecular beam epitaxy for melting of the source material, with which the troubles due to adhering of the molten source material in the form of drops caused on the quality of the epitaxial layer can be greatly decreased. Namely, the inner surface of the crucible is free from pits or other irregularities responsible to the adhering of the melt when the growth plane, which can be exposed by stripping of the surface layer of 0.50 mm thickness by cleavage, has a surface roughness Ra not exceeding 2.0 µm and Rmax not exceeding 18 µm. Such a PBN crucible can be prepared by the CVD method to deposit PBN on the surface of a graphite core of which the surface roughness Ra does not exceed 2 µm.
摘要:
A thermal decomposition cell for producing a molecular beam from a material gas, comprises: a crucible maintained at a given temperature necessary for thermal decomposition of the material gas which is effused in the crucible in a given direction; and a thermal decomposition baffle provided in the crucible and heated to a given temperature necessary for thermal decomposition of the material gas for producing the molecular beam by thermal-decomposing the material gas such that the material gas is baffled in substantially all directions, the thermal decomposition baffle being made of a given metal to cause the thermal decomposition of the material gas. The thermal decomposition baffle may comprise a fiber or a cloth made of the metal loaded in the crucible. The thermal decomposition baffle may comprise plural different sizes of rooms made of the given metal, each of said rooms having fine holes to allow the material gas to pass therethrough, and successively arranged in such a manner that said material gas moves from one room toward the other adjacent thereto.
摘要:
A microchannel plate array assembly (10), comprising an array of microchannels in a microchannel plate (24), is provided in place of a conventional effusion cell to attain high and uniform fluxes localized in the substrate area for the growth of films thereon by gas source molecular beam epitaxy. Using this approach, an effective pressure at the substrate can be sustained which is as much as 100 times greater than the background pressure in the growth chamber.