标题翻译:N-WEGE-HF-LEISTUNGSVERSTÄRKERSCHALTUNG麻省理工学院VERGRÖSSERTER后退FÄHIGKEITUND MEHRLEISTUNGSEFFIZIENZ UNTER VERWENDUNGGEWÄHLTERPHASENLÄNGENUND AUSGANGSIMPEDANZEN
摘要:
An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. A plurality of peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90° transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90° transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R and the carrier amplifier delivers current to the load, which is one-half the current at maximum power when the amplifier is saturated. In one embodiment with the output having an impedance, Z, the carrier amplifier and each peak amplifier is connected to the output through an output-matching network presenting an output impedance of less than Z to each amplifier and with each output-matching network having selected phase length to reduce reactance of the output impedance.
摘要:
An RF power amplifier circuit for amplifying an RF signal over a broad range of power with improved efficiency includes a carrier amplifier for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power is disclosed. One or more peak amplifiers are connected in parallel with the carrier amplifier with each of the peak amplifiers being biased to sequentially provide an amplified output signal after the carrier amplifier approaches saturation. The input signal is applied through a signal splitter to the carrier amplifier and the plurality of peak amplifiers, and an output for receiving amplified output signals from the carrier amplifier and the plurality of peak amplifiers includes a resistive load R/2. The split input signal is applied through a 90° transformer to the carrier amplifier, and the outputs of the peak amplifiers are applied through 90° transformers to a output load. When operating below saturation, the carrier amplifier delivers power to a load of 2R when the carrier amplifier delivers current to the load, which is one-half the current at maximum power and the amplifier is saturated. The signal splitter can split the input signal power equally among the carrier and one or more peak amplifiers, or the input signal can be split unequally with the carrier amplifier receiving less input power than each of the peak amplifiers and vice versa.
摘要:
In an activation signal output circuit having an RF/DC converting circuit for receiving a high frequency power (RF) of a particular frequency to output a DC potential (DC), there is provided a detecting/amplifying part (210) comprising a voltage doubler detector circuit (10) having a detection diode Q1 (Tr34) for detecting a high frequency power; a differential amplifier having a differential pair of transistors (Tr31,Tr32); and a current mirror circuit, wherein the base current of one of the differential pair of transistors (Tr31) is caused to be approximately equal to the DC component of a current flowing through the detection diode Q1 (Tr34), and the sum of currents flowing through the differential pair of transistors (Tr31,Tr32) is caused to be approximately constant by the current mirror circuit. In this way, an activation signal output circuit can be realized which is small-sized and exhibits a high sensitivity and a low power consumption.
摘要:
A high-frequency amplifier comprises a constant voltage drive amplifier (1) using a bipolar transistor (7) the base of which is biased by a constant voltage and which serves as an amplifying element and a constant current driven amplifier (2) using a bipolar transistor (8) the base of which is biased by a constant current. The idle current value of the constant current driven amplifier (2) is set low, and the idle current value of the constant voltage driven amplifier (1) is correspondingly adjusted, thus achieving parallel composition.
摘要:
The linearity of a transistor amplifier comprising a plurality of transistors operating parallel is improved by reducing the odd order transconductance derivatives of signals generated by the transistors. The transistors can be provided in groups with each group having a different bias voltage applied thereto or each group of transistors can have a different input signal applied thereto. The groups of transistors can have different physical parameters suchas the width to length ratio of gates in field effect transistors and threshold voltages for the transistors.
摘要:
Disclosed are a multi-chip power amplifier comprising a plurality of chips (20-23) with each chip being a transistor amplifier, and a housing (36) in which all of the semiconductor chips are mounted. A plurality of input leads extend into the housing and a plurality of output leads extend from the housing. A plurality of first matching networks (38) couple a semiconductor chip to an input lead and a plurality of second matching networks (40) couple each semiconductor chip to an output lead whereby each chip has its own input lead and output lead. By providing all amplifier chips within a single housing with matching networks within the housing coupling the chips to the input and output leads, manufacturing cost is reduced and the overall package footprint on a mounting substrate is reduced. Further, the close proximity of the chips within the housing reduces phase differences among signals in the semiconductor chips.
摘要:
A base station subsystem (102) includes at least one transmit branch (300) having a forward path (301) that includes a signal processing unit (330) coupled at an input to an input Fourier Transform Matrix (FTM) (320) and at an output to an output FTM (360). The transmit branch further includes two error compensation loops, an inner feedback loop that includes an inner loop feedback circuit (302) and an outer feedback loop that includes an outer loop feedback circuit (303). The inner feedback loop provides error compensation for error introduced by the signal processing section to a signal input to the transmit branch. The outer loop provides error compensation for all residual error introduced into the signal when routed through the transmit branch forward path after error compensation may be performed by the inner feedback loop.
摘要:
An optical sensor system for use in a currency validator is described. The system includes a microcontroller (32), a plurality of light transmitters (A, B, C, D, SL, SR, and CC), a plurality of light receivers (A, B, C, D, SL, SR, and CC) and a variable gain amplifier circuit (46) connected to the receivers (A, B, C, D, SL, SR, and CC) and to the microcontroller (37). The microcontroller (37) controls the gain of the variable gain amplifier circuit (46). The variable gain amplifier circuit (46) includes dual transconductance amplifiers (96, 97) connected together in such a manner to compensate for leakage current over a wide range of temperatures.
摘要:
An RF power amplifier for amplifying an RF signal over a broad range of power with improved efficiency includes a main amplifier (20) for amplifying an RF signal over a first range of power and with a power saturation level below the maximum of the broad range of power. A plurality of auxiliary amplifiers (21, 22, 23) are connected in parallel with the main amplifier (20) with each of the auxiliary amplifiers (21, 22, 23) being biased to sequentially provide an amplified output signal after the main amplifier (20) approaches saturation. The input signal is applied through a signal splitter (32) to the main amplifier (20) and the plurality of auxiliary amplifiers (21, 22, 23), and an output for receiving amplified output signals from the main amplifier (20) and the plurality of auxiliary amplifiers (21, 22, 23) includes a resistive load R/2. The split input signal is applied through a 90° transformer (30) to the main amplifier (20), and the outputs of the auxiliary amplifiers (21, 22, 23) are applied through 90° transformers (24, 25, 26) to a output load (28). When operating below saturation, the main amplifier (20) delivers power to a load of 2R and the main amplifier (20) delivers current to the load which is one-half the current at maximum power and the amplifier is saturated.