公开(公告)号：EP2538204B1

公开(公告)日：2018-02-21

申请号：EP10845783.9

申请日：2010-09-06

申请人： National University Corporation Tokyo University Of Agriculture and Technology

发明人： SAMESHIMA Toshiyuki

IPC分类号： G01N22/00 ,  H01L21/66 ,  G01R31/26 ,  G01R31/28

CPC分类号： G01N22/00 ,  G01R31/2648 ,  G01R31/2831 ,  H01L22/12

摘要： Disclosed is a photoinduced carrier lifetime measuring method capable of obtaining photoinduced carrier effective lifetime of a semiconductor substrate with high accuracy regardless of the surface state of the sample. The method includes the steps of: irradiating a microwave onto a semiconductor substrate while periodically pulse-irradiating an induction light onto the semiconductor substrate; detecting the microwave transmitted through the semiconductor substrate or reflected by the semiconductor substrate; and obtaining the effective lifetime of photoinduced carriers generated in the semiconductor substrate by the pulse irradiation of the induction light, based on an irradiation duration T1 and a non-irradiation duration T2 when performing the induction light pulse irradiation and an integrated value of each microwave intensity obtained by the detection.

公开(公告)号：EP3199670A1

公开(公告)日：2017-08-02

申请号：EP15855510.2

申请日：2015-10-28

申请人： Osaka University ,  Itochu Plastics Incorporated ,  National University Corporation Tokyo University of Agriculture and Technology

发明人： MORI Yusuke ,  YOSHIMURA Masashi ,  IMADE Mamoru ,  ISEMURA Masashi ,  KOUKITU Akinori

IPC分类号： C30B29/38 ,  C23C16/34 ,  C30B25/14 ,  H01L21/205 ,  H01L33/32

CPC分类号： C30B29/406 ,  C23C16/34 ,  C30B9/02 ,  C30B25/02 ,  C30B25/14 ,  C30B25/20 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/205 ,  H01L29/2003 ,  H01L33/32

摘要： To provide a method for producing a Group III element nitride crystal by growing it on a plane on the -c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane is a plane on the -c-plane side. A crystal growth temperature is 1200°C or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately -c direction.

摘要翻译： 提供一种通过在-c面侧的平面上生长III族元素氮化物晶体作为晶体生长面来制造III族元素氮化物晶体的方法。 本发明是用于制造III族元素氮化物晶体的方法，其包括通过气相沉积在III族元素氮化物晶种11的晶体生长面上生长III族元素氮化物晶体12的气相生长步骤。 气相生长步骤是使III族金属，氧化剂和含氮气体彼此反应以生长III族元素氮化物晶体12的步骤，或者包括：还原产物气体生成步骤， 使III族元素氧化物与还原性气体反应而生成III族元素氧化物的还原物的气体的工序; 和使还原生成物的气体和含氮气体反应而生成III族元素氮化物晶体12的晶体生成工序。晶体生长平面是-c面侧的面。 晶体生长温度为1200℃或更高。 在气相生长步骤中，III族元素氮化物晶体在近似-c方向上生长。

公开(公告)号：EP2679675B1

公开(公告)日：2017-03-15

申请号：EP12749214.8

申请日：2012-02-24

申请人： National University Corporation Tokyo University of Agriculture and Technology

发明人： MORIYAMA Hiromitsu ,  FUKUHARA Toshiyuki ,  ARIE Tsutomu ,  TERAOKA Tohru

IPC分类号： C12N7/00 ,  A01N63/00 ,  A01P3/00 ,  C12N1/14

CPC分类号： A01N63/04 ,  A01N63/00 ,  C07K14/08 ,  C12N1/14 ,  C12N7/00 ,  C12N2720/00021 ,  C12N2720/00031 ,  C12R1/645

摘要： It is intended to exert a higher control effect on plant-pathogenic fungi. The mycovirus of the present invention has 5 types of double-stranded RNAs, wherein 4 types of double-stranded RNAs out of the 5 types of double-stranded RNAs have 81%, 75%, 72%, and 73% or higher homologies to the nucleotide sequences represented by SEQ ID NOs: 1 to 4, respectively. As an example, a novel mycovirus MoCV3 is used.

公开(公告)号：EP2588608B1

公开(公告)日：2016-10-05

申请号：EP10854117.8

申请日：2010-07-02

申请人： National University Corporation Tokyo University Of Agriculture and Technology

发明人： IKEBUKURO, Kazunori

IPC分类号： C12N15/09 ,  C12Q1/68 ,  G01N33/49

CPC分类号： C12N15/115 ,  C12N2310/16 ,  G01N33/57434 ,  G01N33/57488

公开(公告)号：EP2463366B1

公开(公告)日：2015-08-12

申请号：EP10806260.5

申请日：2010-01-21

申请人： National University Corporation Tokyo University Of Agriculture and Technology

发明人： OZEKI Yoshihiro ,  SASAKI Nobuhiro ,  NAGASAWA Kazuo ,  TERA Masayuki ,  MATSUBA Yuki ,  NAKAMURA Haruka ,  ABE Yutaka

IPC分类号： C12N15/09 ,  C07H13/08 ,  C07H17/065 ,  C12P19/44

CPC分类号： C12N9/1048 ,  C07H13/08 ,  C07H15/18 ,  C07H17/065 ,  C12P19/44 ,  C12P19/60

公开(公告)号：EP2821504A1

公开(公告)日：2015-01-07

申请号：EP13755605.6

申请日：2013-02-28

申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Tokyo Metropolitan University

发明人： TAKAHASHI, Nobuhiro ,  IZUMIKAWA, Keiichi ,  ISHIKAWA, Hideaki ,  YOSHIKAWA, Harunori ,  ISOBE, Toshiaki ,  TAOKA, Masato ,  NAKAYAMA, Hiroshi

IPC分类号： C12Q1/68 ,  A61K31/7088 ,  A61P21/04 ,  A61P25/16 ,  A61P25/28 ,  C40B30/06 ,  G01N33/15 ,  G01N33/50 ,  G01N33/566 ,  G01N33/68 ,  C12N15/09

CPC分类号： G01N33/6845 ,  A61K31/7088 ,  C12N15/113 ,  C12Q1/6883 ,  C12Q2600/106 ,  C12Q2600/156 ,  G01N33/5038 ,  G01N33/6893 ,  G01N2333/4703 ,  G01N2333/4727 ,  G01N2333/90616 ,  G01N2500/04 ,  G01N2800/28 ,  G01N2800/2821 ,  G01N2800/2835

摘要： The present invention aims to develop and provide a method for identifying a disease associated with the abundance of TDP-43 in cells and a method for producing a TDP-43 binding inhibitor. By measuring the abundance of a measurement substance, the amount of binding between a measurement substance and TDP-43, etc. in cells obtained from a subject, it is identified whether or not the subject is suffering from a disease associated with the abundance of TDP-43 in cells. Also, a drug which can significantly reduce the binding between a measurement substance and TDP-43 is produced by adding a drug candidate substance.

摘要翻译： 本发明旨在开发和提供一种用于鉴定与细胞中TDP-43丰度相关的疾病的方法和用于产生TDP-43结合抑制剂的方法。 通过测量测量物质的丰度，从受试者获得的细胞中测量物质和TDP-43等之间的结合量，确定受试者是否患有与TDP丰度相关的疾病 -43细胞。 而且，通过添加药物候选物质，能够显着降低测定物质与TDP-43的结合的药物。

公开(公告)号：EP2796596A1

公开(公告)日：2014-10-29

申请号：EP11878135.0

申请日：2011-12-22

申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Tokuyama Corporation

发明人： KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  NAGASHIMA, Toru ,  HIRAREN, Yuki

IPC分类号： C30B29/38 ,  C30B25/02

CPC分类号： H01L33/343 ,  C30B23/00 ,  C30B25/02 ,  C30B25/08 ,  C30B29/403 ,  H01L21/0254 ,  H01L33/0054

摘要： The present invention relates to an aluminum nitride single crystal characterized in that the concentration of carbon is 1x10 14 atoms/cm 3 , the concentration of chlorine is 1x10 14 to 1x10 17 atoms/cm 3 , and the absorption coefficient at a wavelength of 265 nm is 40 cm -1 or less.

摘要翻译： 本发明涉及一种氮化铝单晶，其特征在于碳的浓度为1×10 14原子/ cm 3，氯的浓度为1×10 14至1×10 17原子/ cm 3，波长为265nm的吸收系数 为40cm -1以下。

公开(公告)号：EP2452679B1

公开(公告)日：2014-05-28

申请号：EP10796931.3

申请日：2010-02-05

申请人： National University Corporation Tokyo University Of Agriculture and Technology ,  Showa University ,  TMS Co., Ltd.

发明人： HONDA, Kazuo ,  HASHIMOTO, Terumasa ,  SHIBATA, Keita ,  HASEGAWA, Keiko ,  HASUMI, Keiji

IPC分类号： A61K31/407 ,  A61P7/02 ,  A61P9/10

CPC分类号： A61K31/407 ,  C07D491/04

公开(公告)号：EP2364987B1

公开(公告)日：2013-11-20

申请号：EP11154933.3

申请日：2011-02-18

申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Takasago International Corporation

发明人： Tanaka, Ken ,  Yokozawa, Tohru ,  Hakamata, Tomohiko

IPC分类号： C07F9/53 ,  C07F9/6561 ,  C07B53/00

CPC分类号： C07B53/00 ,  C07F9/5325 ,  C07F9/6561

摘要： To provide an axially asymmetric optically active biarylphosphorus compound that can easily produced without the step of optical resolution which was almost indispensable in conventional methods. [Means for solving the problems] A method for producing an axially asymmetric phosphorus compound represented by the general formula (1) , comprising a cycloaddition reaction of a compound having a triple bond with the use of a catalyst containing rhodium metal and an optically active bisphosphine. (In the formula (1) , R 1 and R 2 may be the same or different and independently are an alkyl group optionally having a substituent group, a cycloalkyl group optionally having a substituent group, an aryl group optionally having a substituent group, an alkoxy group optionally having a substituent group or an aryloxy group optionally having a substituent group; * is axial asymmetry.) [Representative drawing] none

公开(公告)号：EP2243868A1

公开(公告)日：2010-10-27

申请号：EP09702588.6

申请日：2009-01-09

申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Tokuyama Corporation

发明人： KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  ISHIZUKI, Masanari ,  NAGASHIMA, Toru ,  HAKOMORI, Akira ,  TAKADA, Kazuya

IPC分类号： C30B29/38 ,  C30B25/18

CPC分类号： C30B25/18 ,  C30B25/183 ,  C30B29/403

摘要： The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800 °C in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600 °C, for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600 °C in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature.

摘要翻译： 本发明提供一种自支撑基板，其通过以下步骤获得：在由无机的单晶制成的基底上形成厚度在3〜200nm范围内的Al系III族氮化物薄层 在800℃，在惰性气体气氛中基本上不分解的物质，当与800-1600℃的温度范围内的还原气体接触时会分解产生挥发物，例如蓝宝石; 通过在800-1600℃的温度范围内，在含有氨气体的还原性气体气氛中对叠层基板进行热处理，沿着基底基板和Al基III族氮化物薄层之间的界面形成空隙 ; 在Al系III族氮化物薄层上形成III族氮化物单晶厚层; 并分离这些形成的层。 自支撑衬底是诸如AlN的III族氮化物单晶的自支撑衬底，其适合用于形成诸如紫外光发射器件的半导体器件，并且其晶面显示出大的曲率半径。