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178 条记录 (耗时 0.014 秒)

    Alkene ligand precursor and synthesis method
    101.
    发明公开
    Alkene ligand precursor and synthesis method 有权
    Alkenligand-Zwischenstoff und Syntheseverfahren

    公开(公告)号：EP1001047A2

    公开(公告)日：2000-05-17

    申请号：EP99308880.6

    申请日：1999-11-08

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Zhuang, Wei-Wei ,  Nguyen, Tue ,  Evans, David R. ,  Hsu, Sheng Teng ,  Barrowcliff, Robert ,  Charneski, Lawrence J.

    IPC分类号： C23C16/06

    CPC分类号： C23C16/18

    摘要： A metal(hfac), alkene ligand precursor has been provided. The alkene ligand includes double bonded carbon atoms, with first and second bonds to the first carbon atom, and third and fourth bonds to the second carbon atom. The first, second, third, and fourth bonds are selected from a the group consisting of H, C 1 to C 8 alkyl, C 1 to C 8 haloalkyl, and C 1 to C 8 alkoxyl. As a general class, these precursors are capable of high metal deposition rates and high volatility, despite being stable in the liquid phase at low temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described alkene ligand class of metal precursors.

    摘要翻译： 已经提供了金属（hfac），烯烃配体前体。 烯属配体包括双键键合的碳原子，与第一个碳原子具有第一个和第二个键，第三个和第四个键连接到第二个碳原子。 第一，第二，第三和第四键选自H，C 1至C 8烷基，C 1至C 8卤代烷基和C 1至C 8烷氧基。 作为一般类，尽管在低温下在液相中稳定，但这些前体能够具有高的金属沉积速率和高挥发性。 沉积有该前体的铜具有低电阻率和高粘合特性。 已经提供了一种产生上述烯属配体类金属前体的高产率的合成方法。

    ESD protection thyristor with trigger diode
    103.
    发明公开
    ESD protection thyristor with trigger diode 有权
    ESD-Schutz晶闸管触发二极管

    公开(公告)号：EP0982776A2

    公开(公告)日：2000-03-01

    申请号：EP99306769.3

    申请日：1999-08-25

    申请人： SHARP KABUSHIKI KAISHA

    发明人： Kawazoe, Hidechika ,  Aoki, Eiji ,  Hsu, Sheng Teng ,  Fujii, Katsumasa

    IPC分类号： H01L27/02 ,  H01L29/74

    CPC分类号： H01L27/0262 ,  H01L27/0248 ,  H01L27/0259 ,  H01L29/7412

    摘要： An electrostatic discharge protection device according to the present invention is provided at an input or an output of a semiconductor integrated circuit for protecting an internal circuit of the semiconductor integrated circuit from an electrostatic surge flowing into or out of the semiconductor integrated circuit. The electrostatic discharge protection device includes: a thyristor; and a trigger diode for triggering the thyristor with a low voltage. The trigger diode includes: an n-type cathode high impurity concentration region; a p-type anode high impurity concentration region; and an insulator section for electrically insulating a silicide layer formed on a surface of the n-type cathode high impurity concentration region from another silicide layer formed on a surface of the p-type anode high impurity concentration region.

    摘要翻译： 根据本发明的静电放电保护装置设置在半导体集成电路的输入或输出端，用于保护半导体集成电路的内部电路免受流入或流出半导体集成电路的静电浪涌。 静电放电保护装置包括：晶闸管; 以及用于以低电压触发晶闸管的触发二极管。 触发二极管包括：n型阴极高杂质浓度区域; p型阳极杂质浓度高的区域; 以及绝缘体部分，用于将形成在n型阴极高杂质浓度区域的表面上的硅化物层与形成在p型阳极高杂质浓度区域的表面上的另一硅化物层电绝缘。