利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

567 条记录 (耗时 0.012 秒)

    Process for forming deposited film
    101.
    发明公开
    Process for forming deposited film 失效
    形成沉积膜的过程

    公开(公告)号：EP0241317A2

    公开(公告)日：1987-10-14

    申请号：EP87303225.4

    申请日：1987-04-13

    申请人： CANON KABUSHIKI KAISHA

    发明人： Hirai, Yutaka ,  Shirai, Shigeru ,  Matsuyama, Jinsho

    IPC分类号： H01L21/205 ,  C23C16/24

    CPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

    摘要： A process for forming a deposited film comprises the steps of:

    (a) arranging previously a substrate for formation of a deposited film in a film forming space;
    (b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween; and
    (c) exposing the deposited film growth surface to a gaseous substance (E) having etching action on the deposited film to be formed during the film forming step (b) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.

    摘要翻译： 一种形成沉积膜的方法包括以下步骤：（a）预先在膜形成空间中布置用于形成沉积膜的衬底; （b）通过引入由含硅和卤素的化合物（SX）的分解形成的活化物种（A）和由化学物质（B）形成的活化物种（B）用于膜形成在所述衬底上形成沉积膜 其与所述活化物种（A）化学相互反应而彼此分开，进入所述膜形成空间以实现它们之间的化学反应; 和（c）将沉积的膜生长表面暴露于对成膜步骤（b）期间形成的沉积膜具有蚀刻作用的气态物质（E），以在沉积的膜生长表面上施加蚀刻作用，由此实现优先结晶 在特定的脸部方向增长。

    Process for forming deposited film
    102.
    发明公开
    Process for forming deposited film 失效
    Verfahren zur Herstellung einer niedergeschlagenen Schicht。

    公开(公告)号：EP0241311A2

    公开(公告)日：1987-10-14

    申请号：EP87303171.0

    申请日：1987-04-10

    申请人： CANON KABUSHIKI KAISHA

    发明人： Hirai, Yutaka

    IPC分类号： H01L21/205 ,  C23C16/24

    CPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02647

    摘要： A process for forming a deposited film comprises:

    (a) the step of arranging a substrate having a portion comprising a material which becomes the crystal nucleus for formation of a deposited film or a material capable of forming selectively said crystal nucleus into a film forming space for formation of a deposited film;
    (b) the film forming step of introducing an activated species (A) formed by decomposition of a compound containing silicon and a halogen and an activated species (8) formed from a chemical substance for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween and form a deposited film on said substrate;
    (c) the step of exposing the deposited film growth surface to a gaseous substance having etching action on the deposited film to be formed during the film forming step to apply etching action on said deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.

    摘要翻译： 形成沉积膜的方法包括：（a）将具有包含成为晶核的材料的部分的基板布置成用于形成沉积膜或能够选择性地形成所述晶核的材料的成膜空间的步骤 用于形成沉积膜; （b）引入由含有硅和卤素的化合物分解形成的活性物质（A）的成膜步骤和由用于成膜的化学物质形成的活化物质（B），所述化学物质与所述活化物质化学相互反应 （A）彼此分离成所述成膜空间以在其间进行化学反应，并在所述基材上形成沉积膜; （c）将沉积的膜生长表面暴露于在成膜步骤期间形成的沉积膜上具有蚀刻作用的气态物质以对所述沉积膜生长表面施加蚀刻作用的步骤，从而优先实现特定的 面向。

    Method of forming amorphous polymeric halosilane films and products produced therefrom
    104.
    发明公开
    Method of forming amorphous polymeric halosilane films and products produced therefrom 失效
    一种生产薄膜的和聚合的卤代硅烷的无定形和通过该方法方法制得的产品。

    公开(公告)号：EP0140660A2

    公开(公告)日：1985-05-08

    申请号：EP84307210.9

    申请日：1984-10-19

    申请人： DOW CORNING CORPORATION

    发明人： Sharp, Kenneth George ,  Stark, Leslie Diane ,  Chu, Hsien-kun

    IPC分类号： C23C16/24

    CPC分类号： H01L21/02425 ,  C23C16/24 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262

    摘要： There is described herein a method of forming amorphous polymeric halosilane films by decomposition on a substrate of bromo-, chloro-, fluoro-, di- or polysilanes at a temperature of between about 250°C and 550°C. As an example, hexafluorodisilane was decomposed at 350°C for 45 minutes and formed a gold lightly reflective film on a glass substrate. The films so formed may have application as solar cells, thin film transistors, optical data storage media and scratch resistant coatings.

    摘要翻译： 有在上溴，氯，氟 - ，二 - 或聚硅烷的衬底上形成由分解无定形聚合卤代硅烷膜的方法在约250℃和550℃。如在实施例中，六氟乙硅烷的温度下描述 该分解在350℃下45分钟，形成在玻璃基板轻轻反射电影金。 该膜如此形成可具有应用如太阳能电池，薄膜晶体管，光学数据存储介质和耐刮擦性的涂层。