MULTI RESONANT ANTENNA
    166.
    发明公开
    MULTI RESONANT ANTENNA 审中-公开
    MULTIRESONANZANTENNE

    公开(公告)号:EP2087551A4

    公开(公告)日:2010-01-06

    申请号:EP07833611

    申请日:2007-10-26

    发明人: YUN JE-HOON

    IPC分类号: H01Q5/00 H01Q1/24 H01Q9/42

    摘要: Provided is a small multi-resonant antenna, which includes an antenna element; a plurality of feeders for supplying power to the antenna element; a parasitic device disposed in a dielectric region between a board where an antenna circuit is positioned and the antenna element; a feed switch for selectively connecting any one among the feeders to the antenna element to supply power to the antenna element; and a parasitic device switch for controlling the parasitic device. Herein the feeders are disposed in such a manner that a total length of the antenna element is different individually. The present invention provides an antenna that can widely vary resonant frequency and delicately control frequency within a randomly selected resonant frequency, and a manufacturing method thereof.

    FIELD EMISSION DEVICE AND FIELD EMISSION DISPLAY DEVICE USING THE SAME
    169.
    发明公开
    FIELD EMISSION DEVICE AND FIELD EMISSION DISPLAY DEVICE USING THE SAME 审中-公开
    场发射装置和场发射显示设备

    公开(公告)号:EP1751782A4

    公开(公告)日:2008-12-10

    申请号:EP05746170

    申请日:2005-06-03

    摘要: Provided are a field emission device and a field emission display device using the same. The field emission device includes a cathode portion having a substrate, a cathode electrode formed on the substrate, and a field emitter connected to the cathode electrode; a field emission-suppressing gate portion formed on the cathode portion around the field emitter and surrounding the field emitter; and a field emission-inducing gate portion having a metal mesh with at least one penetrating hole, and a dielectric layer formed on at least a part of the metal mesh, wherein the field emission-suppressing gate portion suppresses electrons from being emitted from the field emitter, and the field emission-inducing gate portion induces electrons to be emitted from the field emitter. According to this configuration, the conventional problems of the field emission device including a gate leakage current, electron emission caused by an anode voltage, electron beam divergence can be significantly improved.