-
11.发明公开Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom 失效氮化钛含有氮化硼的制造工艺和陶瓷复合材料产品从其。
公开(公告)号：EP0149044A1
公开(公告)日：1985-07-24
申请号：EP84113503.1
申请日：1984-11-08
申请人： Research Development Corporation of Japan , THE FURUKAWA ELECTRIC CO., LTD. , JAPAN METALS & CHEMICALS CO., LTD. , Hirai, Toshio , Masumoto, Tsuyoshi
发明人： Nakae, Hiroyuki , Matsuda, Toshitsugu , Uno, Naoki, c/o Furukawa Denko Kibogaoka Shataku , Matsunami, Yukio , Hirai, Toshio , Masumoto, Tsuyoshi
IPC分类号： C01B21/064 , C04B35/58 , C23C16/34
CPC分类号： C03C17/225 , C03C2217/281 , C03C2218/152 , C04B35/583 , C23C16/34
摘要： Boron nitride containing titanium nitride in an amount of 0.05 to 10 wt.% which is produced at a relatively low temperature, utilizing a chemical vapor deposition technique. In the deposition process, boron, titanium and nitrogen source gases are introduced into an evacuated reactor together with a carrier and/or diluent gas and contacted with a heated substrate previously mounted in the reactor, whereby boron nitride with titanium nitride is deposited onto the substrate. The deposit thus obtained has a high density, a significantly improved heat-shielding ability, a high degree of anisotropy with respect to thermal diffusivity and a high chemical stability. By using such anisotropic boron nitride with BN ceramics, very useful BN type composite ceramics can be produced.
-
12.发明授权
公开(公告)号：EP0317147B1
公开(公告)日：1993-01-27
申请号：EP88310454.9
申请日：1988-11-07
发明人： Niihara, Koichi 1-2-2 Hashirimizu-Shukusha , Nakahira, Atsushi 407 Dokushin-Ryo , Hirai, Toshio
CPC分类号： C04B35/111
-
公开(公告)号：EP0336648A2
公开(公告)日：1989-10-11
申请号：EP89303165.8
申请日：1989-03-30
申请人： NIPPON OIL CO. LTD. , Hirai, Toshio , Sasaki, Makoto , THE GOVERNMENT OF JAPAN REPRESENTED BY THE DIRECTOR-GENERAL, NATIONAL AEROSPACE LABORATORY
发明人： Uemura, Seiichi , Sohda, Yoshio , Ido, Yasuji , Hirai, Toshio , Sasaki, Makoto , Niino, Masayuki
CPC分类号： C04B41/009 , C04B35/83 , C04B41/526 , C04B41/89 , Y10S427/10 , C04B41/4529 , C04B41/5001 , C04B41/5025 , C04B35/52 , C04B38/00
摘要： A carbon/carbon composite having oxidation resistance is produced by filling the voids of a carbon/carbon composite comprising 10-70% by volume of carbon fibers and 5-90% by volume of a carbonaceous matrix and having a void percentage of 10-55%, with at least one of carbon and a ceramic by chemical vapor infiltration and then coating the deposit surface with a ceramic or both ceramic and carbon by chemical vapor deposition.
摘要翻译： 具有抗氧化性的碳/碳复合材料通过填充包含10-70体积％的碳纤维和5-90体积％碳质基质并且具有10-55的空隙率的碳/碳复合物的空隙来制备 ％，通过化学气相渗透与碳和陶瓷中的至少一种，然后通过化学气相沉积用陶瓷或陶瓷和碳涂覆沉积表面。
-
14.发明授权Process for manufacturing thin film of high-Tc superconducting oxide 失效一种用于生产高温Supraleiteroxyd的薄层的过程。
公开(公告)号：EP0329103B1
公开(公告)日：1995-06-07
申请号：EP89102584.3
申请日：1989-02-15
申请人： KABUSHIKI KAISHA RIKEN , Research Development Corporation of Japan , Hirai, Toshio , Yamane, Hisanori
CPC分类号： H01L39/2441 , C23C16/408 , C30B25/02 , C30B29/22 , C30B29/225
摘要： A process for manufacturing a thin film of high-Tc superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the elements constituting the superconducting oxide and a carrier gas with oxygen, which process comprises depositing a layer of an oxide composition on a substrate under a chemical deposition condition of a temperature below 1,000 DEG C and a reduced pressure from vaporizing sources for the elements including at least barium, yttrium and copper and subjecting the so deposited layer to epitaxial crystal growth to form an oxide thin film having a chemical composition of Ba2YCu3O7-y, wherein said vaporizing sources consist each of an organic complex compound, such as beta -diketone complex.
-
15.发明公开RHOMBOHEDRAL POLYCRYSTALLINE BORON NITRIDE AND PROCESS FOR ITS PRODUCTION. 失效RHOMBOHEDRISCHES多晶氮化硼及其生产。
公开(公告)号：EP0216932A4
公开(公告)日：1989-07-26
申请号：EP86901511
申请日：1986-02-27
发明人： MATSUDA TOSHITSUGU , NAKAE HIROYUKI , HIRAI TOSHIO
IPC分类号： C01B21/064 , C04B35/583 , C04B35/5831 , C23C16/34 , C30B35/00
CPC分类号： C23C16/342 , C01B21/064 , C01P2002/72 , C01P2004/03 , C04B35/583 , C04B35/5831 , C30B35/002 , Y10S148/113
摘要： Highly pure, high-density rhombohedral polycrystalline boron nitride substantially comprising rhombohedral crystals and having a three-fold axis of symmetry (an axis parallel to axis c according to hexagonal representation) oriented to one direction, which can be obtained in an arbitrary mass or thin film form by a chemical vapor deposition process of introducing a boron source gas and a nitrogen source gas and, optionally, a diluting and carrier gas into a reactor provided with a heated base to deposit boron nitride on the base, while providing a nitrogen source gas- and/or a carrier gas-diffusing layer around the heated base. The resulting boron nitride is extremely useful as semiconductors, crucibles for melting, various high-temperature jigs, high-frequency insulators, microwave transmitting apertures, and boron source for semi-conductors and, in addition, optimal as a precursor of high-pressure phase cubic boron nitride.
-
公开(公告)号：EP0229522A3
公开(公告)日：1988-03-16
申请号：EP86310064
申请日：1986-12-23
申请人： National Aerospace Laboratories of Science & Technology Agency , Hirai, Toshio , Watanabe, Ryuzo , DAIKIN INDUSTRIES, LIMITED , SUMITOMO ELECTRIC INDUSTRIES LIMITED
发明人： Niino, Masayuki , Suzuki, Akio , Nirai, Toshio , Watanabe, Ryuzo , Hirano, Tohru , Kuroishi, Nobuhito
CPC分类号： C23C14/22 , B22F3/1109 , B22F7/02 , B22F2998/00 , C23C4/02 , C23C4/06 , C23C14/027 , C23C14/0688 , C23C16/029 , C23C16/30 , C23C16/44 , C23C28/3215 , C23C28/3455 , C23C28/36 , Y02T50/67 , B22F2207/01
摘要： The present invention relates to a method of producing a functionally gradient material whose components and structure are continuously adjusted by the coating, plating and powder metallurgy techniques to change its function in turn and provides a method of producing a functionally gradient material superior in heat-resistance, corrosion-reistance and resistance to thermal fatigue by distributing a third component having a lower Young's modulus or formed of high-strength material sufficiently durable to the fracture strength among ceramics as a first component and metals or other ceramics as a second component to change the function.
-
17.发明授权Process for manufacturing thin film of high-Tc superconducting oxide 失效一种用于生产高温的薄层的过程Supraleiteroxyd
公开(公告)号：EP0329103B2
公开(公告)日：1999-03-17
申请号：EP89102584.3
申请日：1989-02-15
申请人： Kabushiki Kaisha Riken , Research Development Corporation of Japan , Hirai, Toshio , Yamane, Hisanori
CPC分类号： H01L39/2441 , C23C16/408 , C30B25/02 , C30B29/22 , C30B29/225
摘要： A process for manufacturing a thin film of high-Tc superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the elements constituting the superconducting oxide and a carrier gas with oxygen, which process comprises depositing a layer of an oxide composition on a substrate under a chemical deposition condition of a temperature below 1,000 DEG C and a reduced pressure from vaporizing sources for the elements including at least barium, yttrium and copper and subjecting the so deposited layer to epitaxial crystal growth to form an oxide thin film having a chemical composition of Ba2YCu3O7-y, wherein said vaporizing sources consist each of an organic complex compound, such as beta -diketone complex.
-
公开(公告)号：EP0382609B1
公开(公告)日：1994-08-17
申请号：EP90400283.9
申请日：1990-02-02
申请人： KABUSHIKI KAISHA RIKEN , Research Development Corporation of Japan , Hirai, Toshio , Yamane, Hisanori
发明人： Kurosawa, Hideyuki, c/o Kabushiki Kaisha Riken , Hirai, Toshio , Yamane, Hisanori, 201 Roju Aihara , Yamashita, Tsutomu
CPC分类号： H01L39/2496 , H01L39/2441 , Y10S505/817 , Y10S505/819 , Y10S505/82
-
公开(公告)号：EP0329103A3
公开(公告)日：1990-10-10
申请号：EP89102584.3
申请日：1989-02-15
申请人： KABUSHIKI KAISHA RIKEN , Research Development Corporation of Japan , Hirai, Toshio , Yamane, Hisanori
CPC分类号： H01L39/2441 , C23C16/408 , C30B25/02 , C30B29/22 , C30B29/225
摘要： A process for manufacturing a thin film of high-T c superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the elements constituting the superconducting oxide and a carrier gas with oxygen, which process comprises depositing a layer of an oxide composition on a substrate under a chemical deposition condition of a temperature below 1,000°C and a reduced pressure from vaporizing sources for the elements including at least barium, yttrium and copper and subjecting the so deposited layer to epitaxial crystal growth to form an oxide thin film having a chemical composition of Ba₂YCu₃O 7-y , wherein said vaporizing sources consist each of an organic complex compound, such as β-diketone complex.
-
20.发明公开
公开(公告)号：EP0382609A2
公开(公告)日：1990-08-16
申请号：EP90400283.9
申请日：1990-02-02
申请人： KABUSHIKI KAISHA RIKEN , Research Development Corporation of Japan , Hirai, Toshio , Yamane, Hisanori
发明人： Kurosawa, Hideyuki, c/o Kabushiki Kaisha Riken , Hirai, Toshio , Yamane, Hisanori, 201 Roju Aihara , Yamashita, Tsutomu
CPC分类号： H01L39/2496 , H01L39/2441 , Y10S505/817 , Y10S505/819 , Y10S505/82
摘要： A method of manufacturing Josephson junctions includes steps of high Tc superconductor thin films on a substrates by chemical vapor deposition using raw materials, which includes at least yttrium, barium and copper, serving as vapor generating sources, and fabricating the high Tc superconductor thin films into micro-bridges to produce Josephson junctions.
摘要翻译： 制造约瑟夫森结的方法包括通过使用原料的化学气相沉积在基底上的高Tc超导体薄膜的步骤，其至少包括用作蒸汽发生源的钇，钡和铜，并且将高Tc超导体薄膜制成 微桥生产约瑟夫逊路口。
-
-
-
-
-
-
-
-
-
搜索结果
21 条记录 (耗时 0.01 秒)
