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39 条记录 (耗时 0.018 秒)

    Separating method for a layer that is to be transferred
    11.
    发明公开
    Separating method for a layer that is to be transferred 审中-公开
    Methode zur Separierung einer zu transferierenden Schicht

    公开(公告)号：EP1434263A2

    公开(公告)日：2004-06-30

    申请号：EP03029236.1

    申请日：2003-12-18

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Maruyama, Junya ,  Ohno, Yumiko ,  Takayama, Toru ,  Goto, Yuugo ,  Yamazaki, Shunpei

    IPC分类号： H01L21/68

    摘要： The present invention is a separation method for easy separation of an allover release layer (12) with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A separation method comprising the steps of forming a metal film (11), a first oxide, and a semiconductor film containing hydrogen in this order; and bonding a support (13) to a release layer (12) containing the first oxide and the semiconductor film and separating the release layer (12) bonded to the support (13) from a substrate (10) provided with the metal layer (11) by a physical means. Through the separation method, heat treatment is carried out to diffuse hydrogen contained in the semiconductor film, a third oxide is formed by reducing a second oxide formed at a surface boundary between the metal film (11) and the first oxide film, and a film containing the second oxide and the third oxide, a surface boundary between the film containing the second oxide and the third oxide, and the metal film, or a surface boundary between the film containing the second oxide and the third oxide, and the first oxide is split.

    摘要翻译： 本发明是用于容易地分离大面积的全面释放层（12）的分离方法。 此外，本发明是在形成剥离层期间不受使用诸如基板的种类的基板的限制的分离方法。 一种分离方法，包括以下步骤：依次形成含有氢的金属膜（11），第一氧化物和半导体膜; 以及将支撑体（13）接合到包含所述第一氧化物和所述半导体膜的剥离层（12）上，并且从设置有所述金属层（11）的基板（10）分离与所述支撑体（13）接合的所述剥离层（12） ）通过物理手段。 通过分离方法，进行热处理以扩散半导体膜中所含的氢，通过还原在金属膜（11）和第一氧化物膜之间的表面边界处形成的第二氧化物，形成第三氧化物， 含有第二氧化物和第三氧化物的膜，含有第二氧化物的膜和第三氧化物的膜与金属膜之间的表面边界或含有第二氧化物的膜与第三氧化物之间的表面边界以及第一氧化物是 分裂。

    Method of transferring a laminate and method of manufacturing a semiconductor device
    13.
    发明公开
    Method of transferring a laminate and method of manufacturing a semiconductor device 有权
    一种用于传送一个对象和方法，用于制造半导体器件的方法

    公开(公告)号：EP1363319A2

    公开(公告)日：2003-11-19

    申请号：EP03010502.7

    申请日：2003-05-09

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Takayama, Toru ,  Goto, Yuugo ,  Maruyama, Junya ,  Ohno, Yumiko

    IPC分类号： H01L21/20 ,  H01L21/762

    CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L2221/68368 ,  Y10T428/14

    摘要： An object of the present invention is to provide a method of transferring an object to be peeled onto a transferring member in a short time without imparting damage to the object to be peeled within a laminate. Also, another object of the present invention is to provide a method of manufacturing a semiconductor device in which a semiconductor element manufactured on a substrate is transferred onto a transferring member, typically, a plastic substrate. The methods are characterized by including: forming a peeling layer (11) and an object (13) to be peeled on a substrate (10); bonding the object to be peeled and a support through a two-sided tape; peeling the object to be peeled from the peeling layer by using a physical method, and then bonding the object to be peeled onto a transferring member; and peeling the support and the two-sided tape from the object to be peeled.

    摘要翻译： 本发明的一个目的是提供传递环的方法反对可以在很短的时间到转印环构件剥离而不赋予损坏对象物的层压体中剥离。 所以，本发明的另一个目的是提供一种制造其中在衬底制造的半导体元件被转印到转印环构件典型地，塑料基板的半导体装置的制造方法。 方法是通过包括为特征：形成剥离层（11）和到对象（13）上的基板（10）被剥离; 粘接被剥离的对象，并通过双面胶带的支撑体; 剥离对象从剥离层，通过使用物理方法，然后接合所述对象到转印环构件被剥离被剥离; 剥离的支持和来自物体的双面胶带被剥离。

    Manufacture of semiconductor device
    16.
    发明公开
    Manufacture of semiconductor device 审中-公开
    韦尔法罕zur Herstellung eines Halbleiterbauelements

    公开(公告)号：EP2259300A2

    公开(公告)日：2010-12-08

    申请号：EP10176959.4

    申请日：2004-10-19

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Goto, Yuugo ,  Fukumoto, Yumiko ,  Takayama, Toru ,  Maruyama, Junya ,  Tsurume, Takuya

    IPC分类号： H01L21/762 ,  H01L21/84

    摘要： A method for manufacturing a semiconductor device, comprising the steps of: forming a peeling layer containing an element and a terminal electrode over a first substrate; peeling the peeling layer and the terminal electrode from the first substrate; pasting a second substrate to the peeling layer and the terminal electrode with an adhesive material; and pressure-bonding an FPC to the terminal electrode in which a circumference is covered with a protective layer.

    摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在第一衬底上形成包含元件和端子电极的剥离层; 从第一基板剥离剥离层和端子电极; 用粘合剂材料将第二衬底粘贴到剥离层和端子电极; 并且将FPC压接到周围被保护层覆盖的端子电极。

    Method of transferring a laminate and method of manufacturing a semiconductor device
    17.
    发明公开
    Method of transferring a laminate and method of manufacturing a semiconductor device 有权
    转印一种制造半导体器件的叠层体和方法的方法

    公开(公告)号：EP1363319A3

    公开(公告)日：2005-01-26

    申请号：EP03010502.7

    申请日：2003-05-09

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Takayama, Toru ,  Goto, Yuugo ,  Maruyama, Junya ,  Ohno, Yumiko

    IPC分类号： H01L21/20 ,  H01L21/762

    CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L2221/68368 ,  Y10T428/14

    摘要： An object of the present invention is to provide a method of transferring an object to be peeled onto a transferring member in a short time without imparting damage to the object to be peeled within a laminate. Also, another object of the present invention is to provide a method of manufacturing a semiconductor device in which a semiconductor element manufactured on a substrate is transferred onto a transferring member, typically, a plastic substrate. The methods are characterized by including: forming a peeling layer (11) and an object (13) to be peeled on a substrate (10); bonding the object to be peeled and a support through a two-sided tape; peeling the object to be peeled from the peeling layer by using a physical method, and then bonding the object to be peeled onto a transferring member; and peeling the support and the two-sided tape from the object to be peeled.

    Peeling method
    20.
    发明公开
    Peeling method 有权
    Methode zur Herstellung eines Halbleiterbauelementes

    公开(公告)号：EP1383165A2

    公开(公告)日：2004-01-21

    申请号：EP03015816.6

    申请日：2003-07-10

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Takayama, Toru ,  Maruyama, Junya ,  Goto, Yuugo ,  Ohno, Yumiko ,  Tsurume, Takuya ,  Kuwabara, Hideaki

    IPC分类号： H01L21/336

    CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

    摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410°C or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

    摘要翻译： 提供不会对被剥离层造成损害的剥离方法，该方法不仅能够剥离具有小面积的被剥离层，而且可以剥离具有大面积的待剥离的整个层 高产。 此外，提供一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种半导体器件及其制造方法，该半导体器件通过将各种元件（通常为TFT）粘附到柔性膜而减小了重量。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。