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    Peeling method
    3.
    发明公开
    Peeling method 有权
    Methode zur Herstellung eines Halbleiterbauelementes

    公开(公告)号：EP1383165A2

    公开(公告)日：2004-01-21

    申请号：EP03015816.6

    申请日：2003-07-10

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Takayama, Toru ,  Maruyama, Junya ,  Goto, Yuugo ,  Ohno, Yumiko ,  Tsurume, Takuya ,  Kuwabara, Hideaki

    IPC分类号： H01L21/336

    CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

    摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410°C or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

    摘要翻译： 提供不会对被剥离层造成损害的剥离方法，该方法不仅能够剥离具有小面积的被剥离层，而且可以剥离具有大面积的待剥离的整个层 高产。 此外，提供一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种半导体器件及其制造方法，该半导体器件通过将各种元件（通常为TFT）粘附到柔性膜而减小了重量。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

    TFT with an LDD structure and its manufacturing method
    9.
    发明公开
    TFT with an LDD structure and its manufacturing method 有权
    TFT mit einer LDD Struktur und sein Herstellungsverfahren

    公开(公告)号：EP0989614A2

    公开(公告)日：2000-03-29

    申请号：EP99117347.7

    申请日：1999-09-03

    申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Yamazaki, Shunpei ,  Nakajima, Setsuo ,  Kuwabara, Hideaki

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/78627 ,  H01L27/1237 ,  H01L27/1296 ,  H01L29/66765 ,  H01L29/78624 ,  H01L29/78678 ,  H01L29/78684

    摘要： There is provided a semiconductor device including a semiconductor circuit formed by semiconductor elements having an LDD structure which has high reproducibility, improves the stability of TFTs and provides high productivity and a method for manufacturing the same.
    In order to achieve the object, the design of a second mask is appropriately determined in accordance with requirements associated with the circuit configuration to make it possible to form a desired LDD region on both sides or one side of the channel formation region of a TFT.

    摘要翻译： 提供一种半导体器件，其包括由具有高再现性的LDD结构的半导体元件形成的半导体电路，提高TFT的稳定性并提供高生产率及其制造方法。 为了实现该目的，根据与电路结构相关的要求适当地确定第二掩模的设计，使得可以在TFT的沟道形成区域的两侧或一侧上形成期望的LDD区域。