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11.发明公开
公开(公告)号：EP1689011A4
公开(公告)日：2009-08-05
申请号：EP04792957
申请日：2004-10-26
发明人： HATTA NAOKI , INABA TOSHIKAZU , UCHIYAMA IZUMI
IPC分类号： C01B25/45 , H01M4/131 , H01M4/1315 , H01M4/136 , H01M4/13915 , H01M4/58 , H01M4/62 , H01M10/052 , H01M10/36 , H01M10/44
CPC分类号： H01M4/5825 , C01B25/45 , H01M4/131 , H01M4/1315 , H01M4/136 , H01M4/13915 , H01M4/582 , H01M4/625 , H01M10/052
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12.发明公开
公开(公告)号：EP1603177A4
公开(公告)日：2009-08-05
申请号：EP04706803
申请日：2004-01-30
发明人： HATTA NAOKI , INABA TOSHIKAZU , UCHIYAMA IZUMI
CPC分类号： H01M10/0525 , H01M4/136 , H01M4/364 , H01M4/5825 , H01M4/625
摘要： A positive electrode material for secondary battery, comprising as a main component a positive electrode active substance of the general formula LinFePO4 (wherein n is a number of 0 to 1) and further comprising molybdenum (Mo). The Mo is complexed with the positive electrode active substance LinFePO4. In a preferred form of the positive electrode material, the positive electrode material on its surface has deposits of conductive carbon.
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13.发明公开CVD APPARATUS HAVING MEANS FOR CLEANING WITH FLUORINE GAS AND METHOD OF CLEANING CVD APPARATUS WITH FLUORINE GAS 审中-公开随着对清洁氟气和方法用于清洁CVD设备符合GAS FLUOR MEANS化学气相淀积设备
公开(公告)号：EP1542264A4
公开(公告)日：2007-03-28
申请号：EP03712689
申请日：2003-03-13
发明人： BEPPU TATSURO , SAKAI KATSUO , OKURA SEIJI , SAKAMURA MASAJI , ABE KAORU , MURATA HITOSHI , WANI ETSUO , KAMEDA KENJI , MITSUI YUKI , OHIRA YUTAKA , YONEMURA TAISUKE , SEKIYA AKIRA
IPC分类号： H01L21/306 , B08B7/00 , C23C16/44 , H01J37/32 , H01L21/3065 , H01L21/31
CPC分类号： B08B7/0035 , C23C16/4405 , H01J37/32357 , H01J37/32862 , Y02C20/30 , Y02P70/605
摘要： A method of cleaning a CVD apparatus that enables efficiently removing by-products, such as SiO2 and Si3N4, having stuck to and deposited on the surfaces of inside wall, electrode, etc. of a reaction chamber during the operation of film formation, and that minimizes the volume of cleaning gas discharged so as to decrease influences on global warming and other environmental matter, thereby enabling cost reduction. A fluorinated compound is energized so that the fluorinated compound is reacted to thereby form fluorine gas component and components other than the fluorine gas component. The thus formed fluorine gas component and components other than the fluorine gas component are separated from each other, and the separated fluorine gas component is purified. The separated and purified fluorine gas is converted to plasma by a CVD apparatus after the operation of film formation on a substrate, which plasma removes by-products sticking to the inside of reaction chamber.
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14.发明公开
公开(公告)号：EP1213049A4
公开(公告)日：2002-09-04
申请号：EP00911286
申请日：2000-03-22
申请人： NAT INST OF ADVANCED IND SCIEN , RES INST INNOVATIVE TECH EARTH , NIPPON STEEL CORP , SUMITOMO ELECTRIC INDUSTRIES
发明人： TACHIKI AKIRA , MANO HIROSHI , HARAYA KENJI
IPC分类号： B01D53/22 , B01D71/24 , B01D71/44 , B01D71/52 , B01D71/56 , B01D71/64 , B01D71/68 , B01D71/82 , C08G73/10 , B01D67/00 , C08J5/18
CPC分类号： B01D71/82 , B01D53/228 , B01D71/24 , B01D71/44 , B01D71/52 , B01D71/56 , B01D71/64 , B01D71/68 , C08G73/10
摘要： This invention relates to resin material for gas separation base containing a cardo polyimide structure in which the hydrogen atoms in the side-chain benzyl and/or allyl position are halogenated at a rate of modification by halogen of 0.1% or more or resin material for gas separation base containing polymer in which the hydrogen atoms in the side-chain benzyl and/or allyl position are halogenated at a rate of modification by halogen of 34% or more and, additionally, relates to polymer which serves as raw material for the aforementioned resin material for gas separation base containing a cardo polymer structure and a process for producing said polymer; said polymer not only excels in such properties as solvent solubility, ease of conversion to film by a wet process, thermal stability, and chemical stability but also performs well in gas permeability and the process of this invention makes it possible to produce gas separation base, particularly gas separation membrane, whose gas permeability and gas selectivity can be readily controlled.
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15.发明公开
公开(公告)号：EP2270135A4
公开(公告)日：2013-04-10
申请号：EP09735982
申请日：2009-04-15
发明人： YUKAWA HIDEAKI , INUI MASAYUKI
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16.发明公开CORYNEFORM BACTERIUM TRANSFORMANT, AND PROCESS FOR PRODUCING ISOBUTANOL USING SAME 审中-公开FOR ISOBUTANOLHERSTELLUNG转化棒状杆菌和方法，以便
公开(公告)号：EP2415860A4
公开(公告)日：2012-09-05
申请号：EP10758603
申请日：2010-03-29
发明人： YUKAWA HIDEAKI , INUI MASAYUKI
CPC分类号： C12P7/16 , C12N9/0006 , C12N9/88 , Y02E50/10
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公开(公告)号：EP1619170A4
公开(公告)日：2008-12-17
申请号：EP04720210
申请日：2004-03-12
发明人： MITSUI YUKI , YONEMURA TAISUKE , OHIRA YUTAKA , SEKIYA AKIRA
CPC分类号： C01B32/80
摘要： A process for safely and easily producing high-purity carbonyl fluoride having a reduced carbon tetrafluoride content, which comprises feeding carbon monoxide and fluorine to a reactor and reacting the carbon monoxide with the fluorine under such conditions that the pressure inside the reactor is lower than the atmospheric pressure.
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18.发明公开CVD APPARATUS AND METHOD OF CLEANING THE CVD APPARATUS 有权CVD-VORRICHTUNG UND VERFAHREN ZUR REINIGUNG DER CVD-VORRICHTUNG
公开(公告)号：EP1489646A4
公开(公告)日：2008-01-23
申请号：EP03715381
申请日：2003-03-19
发明人： SAKAI K , OKURA S , SAKAMURA M , ABE K , MURATA H , WANI E , KAMEDA K , MITSUI Y , OHIRA Y , YONEMURA T , SEKIYA A
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/306 , H01L21/31
CPC分类号： C23C16/45593 , C23C16/4405 , C23C16/4412 , H01L21/02046 , Y02C20/30 , Y02P70/605
摘要： A method of cleaning a CVD apparatus that enables efficiently removing by-products, such as SiO2 and Si3N4, having stuck to and deposited on the surfaces of inside wall, electrode, etc. of a reaction chamber during the operation of film formation, and that minimizes the volume of cleaning gas discharged so as to decrease influences on global warming and other environmental matter, thereby enabling cost reduction. A CVD apparatus adapted to feed reaction gas into a reaction chamber so as to form a deposit film on a surface of substrate disposed in the reaction chamber, wherein an exhaust path for discharging exhaust gas from the inside of the reaction chamber by means of a pump is fitted with an exhaust gas reflux path for refluxing exhaust gas from a downstream side of the pump to the reaction chamber.
摘要翻译： 一种清洗CVD装置的方法，其能够有效地去除在成膜操作期间粘附并沉积在反应室的内壁，电极等的表面上的SiO 2和Si 3 N 4等副产物，并且 使排出的清洁气体量最小化，以减少对全球变暖和其他环境物质的影响，由此降低成本。 1。一种CVD装置，其特征在于，将反应气体供给到反应室内，在配置在所述反应室内的基板的表面形成堆积膜，所述排气路径利用泵从所述反应室内排出排气 配备有废气回流路径，用于将废气从泵的下游侧回流到反应室。
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公开(公告)号：EP1489645A4
公开(公告)日：2008-01-23
申请号：EP03715380
申请日：2003-03-19
发明人： SAKAI K , OKURA S , SAKAMURA M , ABE K , MURATA H , WANI E , KAMEDA K , MITSUI Y , OHIRA Y , YONEMURA T , SEKIYA A
IPC分类号： C23C16/44 , C23C16/455 , H01L21/306 , H01L21/31 , H01L21/205
CPC分类号： C23C16/45593 , C23C16/4405 , H01L21/02046 , Y02C20/30 , Y02P70/605
摘要： A method of cleaning a CVD apparatus that enables efficiently removing by-products, such as SiO2 and Si3N4, having stuck to and deposited on the surfaces of inside wall, electrode, etc. of a reaction chamber and the side wall of piping, etc. for exhaust path, etc. during the operation of film formation, and that minimizes the volume of cleaning gas discharged so as to decrease influences on global warming and other environmental matter, thereby enabling cost reduction. A CVD apparatus adapted to feed reaction gas into a reaction chamber so as to form a deposit film on a surface of substrate disposed in the reaction chamber, wherein an exhaust path for discharging exhaust gas from the inside of the reaction chamber by means of a pump is fitted with an exhaust gas reflux path for refluxing exhaust gas from a downstream side of the pump to an upstream side of the exhaust path, the exhaust gas reflux path fitted with a plasma generator.
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公开(公告)号：EP1475822A4
公开(公告)日：2007-04-25
申请号：EP03701903
申请日：2003-01-28
发明人： OHIRA Y , MITSUI Y , YONEMURA T , SEKIYA A
IPC分类号： B08B7/00 , C09K13/00 , C09K13/08 , C23C16/44 , H01L21/205 , H01L21/306 , H01L21/3065 , H01L21/311
CPC分类号： H01L21/02019 , B08B7/00 , C09K13/00 , C09K13/08 , C23C16/4405 , H01L21/02046 , H01L21/30604 , H01L21/31116 , Y02C20/30 , Y02P70/605
摘要： A gas for use in cleaning a chamber and etching a silicon-containing film, characterized in that it comprises a perfluoro cyclic ether having two to four oxygen atoms bonded to carbon atoms in an ether linkage. The gas for use in cleaning a chamber and etching a silicon-containing film is a non-toxic gas or volatile liquid, is environmentally friendly since it is less prone to formation of CF4 which is considered to have global warming effect and thus harmful to the environment, is easy to handle, and is excellent with respect to the easiness in the treatment of an exhaust gas derived therefrom, and further exhibits an excellent cleaning speed.
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