摘要:
An optically pumped vertical-cavity surface-emitting laser (VCSEL) device (66) and a method of fabricating the device utilize two separate substrates (70 and 74) that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light (76) to drive the device to emit output laser (78) light having a long peak wavelength. Preferably, the output laser light has a peak wavelength between 1250 nm and 1700 nm, which is desirable for applications in the field of optical communications. The optically pumped VCSEL device includes a short-wavelength VCSEL (68) formed on one (70) of the two substrates and a long-wavelength VCSEL (72) formed on the other substrate (74). The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material (88) may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. Preferably, flip-chip technology is used for the bonding step. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.
摘要:
Provided is a high-power semiconductor laser based on VCSEL, comprising a VCSEL laser module. The VCSEL laser module includes a VCSEL chip array (1) consisting of a plurality of VCSEL chips (10) and an inner wall reflection optical transmission device (2) which is arranged in front of a light emergent face of the VCSEL chip array (1); and the light emergent face of the VCSEL chip array (1) is used for secondarily reflecting the reflected light reflected by a target object (3) and the inner wall reflection optical transmission device (2). Also provided is a packaging structure for the high-power semiconductor laser. The VCSEL chip array (1) is packaged by an inwardly concave arc-shaped heat sink (4), so that the purpose of converging the laser light beam near a centre position can be achieved. The high-power semiconductor laser based on VCSEL has a wide application prospect in the laser medicine and industrial laser processing fields.
摘要:
A semiconductor device includes an array of long-wavelength VCSELs pumped by a short-wavelength optical pump. The array of long-wavelength VCSELs includes a series of semiconductor recesses, where each semiconductor recess is between two layers of a VCSEL, substantially overlapping the transverse model profile of the VCSEL under operation.
摘要:
An optically pumped vertical-cavity surface-emitting laser (VCSEL) device (66) and a method of fabricating the device utilize two separate substrates (70 and 74) that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light (76) to drive the device to emit output laser (78) light having a long peak wavelength. Preferably, the output laser light has a peak wavelength between 1250 nm and 1700 nm, which is desirable for applications in the field of optical communications. The optically pumped VCSEL device includes a short-wavelength VCSEL (68) formed on one (70) of the two substrates and a long-wavelength VCSEL (72) formed on the other substrate (74). The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material (88) may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. Preferably, flip-chip technology is used for the bonding step. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.
摘要:
A vertical cavity surface emitting laser diode (VCSEL), includes top and bottom electrically non-conductive mirrors defining a first laser cavity containing a laser mediuru and designed to resonate at a first wavelength. A second laser cavity is designed to resonate at a second wavelength less than the first wavelength. The second laser cavity is optically coupled to said first laser cavity so as to pump said laser medium and create laser action in said first laser cavity. The second laser cavity is normally provided by a VCSEL stacked below the first laser cavity.
摘要:
A miniature, external cavity, filter-locked laser has a semiconductor optical amplifier, such as a diode laser, and a monolithic prism assembly positioned in the external resonant cavity. The monolithic prism assembly includes a transparent substrate carrying a thin film Fabry-Perot interference filter which is tilted, that is, oriented not normal to the path of the travel of the laser light in the external cavity. Such optical devices can be economically mass produced in advantageously small size, having reproducible spectral performance properties held within tight tolerances. Significantly advantageous applications include dense wavelength division multiplexing systems requiring tightly spaced wavelength subranges for each of the multiple channels. High wavelength stability against temperature and humidity changes, etc., can be achieved.
摘要:
A system and method (10) for heating objects (O) during a thermal treatment process in a production line (P) is described. The system (10) comprises a transport system (11), a mirror arrangement (201, 202, 203, 204, 205, 206) comprising a first mirror surface (21, 21', 21'') and a second mirror surface (22, 22', 22'') arranged at opposite sides, so that the objects (0) may be transported between the mirror surfaces (21, 22, 21', 22', 21'', 22'') along the production line and a radiation device (30) comprising a number of lasers for generating light (L). The radiation device (30) and the mirror arrangement (201, 202, 203, 204, 205, 206) are constructed such that the main direction (R) of light (L) that enters the mirror arrangement (201, 202, 203, 204, 205, 206) is directed towards the first mirror surface (21, 21', 21'') at an angle to the production line (P), and the light (L) subsequently undergoes multiple reflections between the mirror surfaces (21, 22, 21', 22', 21'', 22'') so that a series of multiple reflections of the light (L) travels in the transport direction (OT) along at least a section of the mirror surface (21, 22, 21', 22', 21'', 22'') or travels against the transport direction (OT) along at least a section of the mirror surface (21, 22, 21', 22', 21'', 22'') and heats the objects (0) being transported between the mirror surfaces (21, 22, 21', 22', 21'', 22'').