利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

41 条记录 (耗时 0.012 秒)

    Position-sensitive radiation detector
    12.
    发明公开
    Position-sensitive radiation detector 失效
    Lageempfindlicher Strahlungsdetektor。

    公开(公告)号：EP0383389A1

    公开(公告)日：1990-08-22

    申请号：EP90200303.7

    申请日：1990-02-08

    申请人： TECHNISCHE UNIVERSITEIT DELFT

    发明人： Van Eijk, Carel Wilhelm Eduard ,  Schooneveld, Eric Maurits

    IPC分类号： H01L31/0352 ,  H01L31/118 ,  G01T1/29

    CPC分类号： H01L31/115 ,  G01T1/2928 ,  H01L31/03529 ,  H01L31/1185 ,  Y02E10/50

    摘要： Position-sensitive radiation detector provided with a semiconductor structure comprising a wafer of semiconductor material of a first conductivity type having two principal-surfaces situated at relatively short distances from each other, the dimen­sions of which are sufficient to enclose the desired radiation detection surface. An electrode structure is formed on the wafer surfaces such that when suitable voltages are applied to said electrodes two drift fields are generated in the depleted body of the wafer. Detector/amplifier circuits are connected to selected electrodes of the electrode structure to emit, during operation, a start signal at the instant at which charge carriers are generted in the depleted part of the structure as a consequence of incident radiation or elementary particles, and a to emit a stop signal at the instant when charge carriers reach a detection electrode of the structure after propagation through both drift fields.

    摘要翻译： 具有半导体结构的位置敏感型放射线检测器，该半导体结构包括第一导电类型的半导体材料晶片，其具有彼此相对短距离的两个主表面，其尺寸足以封闭所需的辐射检测表面。 在晶片表面上形成电极结构，使得当对所述电极施加合适的电压时，在晶片的耗尽体中产生两个漂移场。 检测器/放大器电路连接到电极结构的选定电极，以在操作期间发射作为入射辐射或基本粒子的结果的电荷载体在结构的耗尽部分产生的时刻的起始信号，以及 在载流子通过两个漂移场传播后到达结构的检测电极的瞬间发出停止信号。

    RADIATION DETECTOR
    13.
    发明公开
    RADIATION DETECTOR 审中-公开

    公开(公告)号：EP3907767A1

    公开(公告)日：2021-11-10

    申请号：EP21180810.0

    申请日：2017-06-19

    申请人： HAMAMATSU PHOTONICS K.K.

    发明人： KINPARA, Masanori ,  ONODERA, Toshiyuki ,  HITOMI, Keitaro

    IPC分类号： H01L31/08 ,  H01L31/118 ,  H01L31/0224 ,  G01T1/24

    摘要： The present embodiment relates to a radiation detector having a structure enabling suppression of polarization in a thallium bromide crystalline body and suppression of corrosion of an electrode in the air. The radiation detector comprises a first electrode, a second electrode, and a thallium bromide crystalline body provided between the first and second electrodes. At least one of the first electrode and the second electrode includes an alloy layer 12. The alloy layer is comprised of an alloy of metallic thallium and another metal different from the metallic thallium.

    STREIFENDETEKTOR
    17.
    发明授权
    STREIFENDETEKTOR 失效
    条探测器

    公开(公告)号：EP0902982B1

    公开(公告)日：2002-10-02

    申请号：EP97925853.0

    申请日：1997-05-20

    申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. ,  KEMMER, Josef, Dr.

    发明人： KEMMER, Josef ,  LUTZ, Gerhard ,  RICHTER, Rainer ,  STRÜDER, Lothar ,  ANDRICEK, Ladislav ,  GEBHART, Thomas

    IPC分类号： H01L31/115 ,  H01L31/118

    CPC分类号： H01L31/1185 ,  H01L31/115

    摘要： The invention relates to a strip detector and a process for producing a strip detector for detecting ionising particles and/or radiation. Said strip detector has a silicon substrate which provides mutually spaced n-doped regions and therebetween a p-doped insulation region at least on a substrate surface in the form of strips and voltage supply regions, and a first insulation layer applied to a substrate surface, and metal strips arranged above the n-doped regions. The invention is characterised in that directly above the first insulation layer at least one other insulation layer is provided, and that at least one of the insulation layers is interrupted, in projection over the region, between two adjacent n-doped regions, and the p-doped insulation region has a lateral p-doping agent concentration distribution which provides in the region below the interruption of the interrupted insulation layer a higher doping agent concentration than in the insulation regions directly adjoining the n-doped regions.

    Monolithic semiconductor particle detector and method for its manufacture
    18.
    发明公开
    Monolithic semiconductor particle detector and method for its manufacture 有权
    Monolithischer Halbleiterteilchendetektor und Verfahren zu seiner Herstellung

    公开(公告)号：EP1061587A1

    公开(公告)日：2000-12-20

    申请号：EP99830367.1

    申请日：1999-06-15

    申请人： STMicroelectronics S.r.l.

    发明人： Patti, Davide ,  Valvo, Giuseppina

    IPC分类号： H01L31/118 ,  H01L25/04

    CPC分类号： H01L31/115

    摘要： A particle detector formed in a chip of semiconductor material comprises:

    a first layer (42) with a first type of conductivity (n) having a surface on the first major surface of the chip,
    a second layer (40) with the first type of conductivity (n) having a surface on the second major surface of the chip,
    a third layer (41) with the first type of conductivity (n) having a resistivity lower than those of the first and second layers and disposed between the first layer (42) and the second layer (40),
    a first region (46) with a second type of conductivity (p), extending from the first surface into the first layer (42),
    a second region (45) with the second type of conductivity (p), extending from the second major surface into the second layer (40), and
    first (48), second (50,51) and third (43,47) electrical connection means for connection with the first region (46) with the second region (45), and with the third layer (41), respectively.

    To produce a position detector which does not require a large number of connections, the second electrical connection means comprise two electrodes (50,51) arranged a predetermined distance apart on the surface of the second region (45).

    摘要翻译： 形成在半导体材料芯片中的粒子检测器包括：具有在芯片的第一主表面上的表面的第一导电类型的第一层（42），具有第一类型的第二层（40） 具有在芯片的第二主表面上的表面的导电性（n），具有比第一和第二层的电阻率低的第一类型导电性（n）的第三层（41），并且设置在第一层 42）和第二层（40），具有从第一表面延伸到第一层（42）的具有第二类型导电性（p）的第一区域（46），具有第二类型 从第二主表面延伸到第二层（40）的电导率（p）和用于与第一区域（46）连接的第一（48），第二（50,51）和第三（43,47）电连接装置， 与第二区域（45）以及第三层（41）分别连接。 为了产生不需要大量连接的位置检测器，第二电连接装置包括在第二区域（45）的表面上隔开预定距离布置的两个电极（50,51）。