公开(公告)号：EP3534209B1

公开(公告)日：2022-03-30

申请号：EP18204690.4

申请日：2009-09-08

发明人： PINGUET, Thierry ,  GLOECKNER, Steffen ,  DE DOBBELAERE, Peter ,  ABDALLA, Sherif ,  KUCHARSKI, Daniel ,  MASINI, Gianlorenzo ,  YOKOYAMA, Kosei ,  GUCKENBERGER, John ,  MEKIS, Attila

IPC分类号： G02F3/00 ,  H04L27/144 ,  H01L21/84 ,  H01L27/12 ,  H01L25/065 ,  H01L25/16 ,  H04B10/40

公开(公告)号：EP3479502B1

公开(公告)日：2021-12-01

申请号：EP17738020.1

申请日：2017-06-30

发明人： DE DOBBELAERE, Peter ,  YOUNG, Greg

IPC分类号： H04B10/50 ,  G02F1/225 ,  G02F1/21 ,  H04B10/032

公开(公告)号：EP3046255B1

公开(公告)日：2021-08-04

申请号：EP16151740.4

申请日：2016-01-18

发明人： Pang, Simon ,  Denton, Scott ,  Barabas, Stefan ,  Balardeta, Joseph

IPC分类号： H03F1/08 ,  H03F3/08 ,  H03G1/00 ,  H03G3/30 ,  H03F1/30

公开(公告)号：EP3046275B1

公开(公告)日：2019-10-09

申请号：EP16151742.0

申请日：2016-01-18

申请人： Luxtera, Inc.

发明人： Welch, Brian ,  Xu, Kevin

IPC分类号： H04B10/516 ,  H04B10/524 ,  H04B10/50 ,  H04B10/54

公开(公告)号：EP3507649A1

公开(公告)日：2019-07-10

申请号：EP17771625.5

申请日：2017-09-01

申请人： Luxtera, Inc.

发明人： MEKIS, Attila ,  SAHNI, Subal ,  DE KONINCK, Yannick ,  MASINI, Gianlorenzo ,  GHOLAMI, Faezeh

IPC分类号： G02F1/025 ,  G02F1/225

公开(公告)号：EP2326988B1

公开(公告)日：2018-11-07

申请号：EP09812368.0

申请日：2009-09-08

申请人： Luxtera, Inc.

发明人： PINGUET, Thierry ,  GLOECKNER, Steffen ,  DE DOBBELAERE, Peter ,  ABDALLA, Sherif ,  KUCHARSKI, Daniel ,  MASINI, Gianlorenzo ,  YOKOYAMA, Kosei ,  GUCKENBERGER, John ,  MEKIS, Attila

IPC分类号： G02F3/00 ,  H04L27/144 ,  H01L21/84 ,  H01L27/12

CPC分类号： H04B10/2575 ,  H01L21/84 ,  H01L27/1203 ,  H04B10/40

摘要： Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on a single CMOS wafer with different silicon layer thicknesses. The devices may be fabricated on a semiconductor-on-insulator (SOI) wafer utilizing a bulk CMOS process and/or on a SOI wafer utilizing a SOI CMOS process. The different thicknesses may be fabricated utilizing a double SOI process and/or a selective area growth process. Cladding layers may be fabricated utilizing one or more oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafer. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions. Silicon dioxide or silicon germanium integrated in the CMOS wafer may be utilized as an etch stop layer.

公开(公告)号：EP1631980B1

公开(公告)日：2018-08-15

申请号：EP04718583.0

申请日：2004-03-08

申请人： Luxtera, Inc. ,  Gunn III, Lawrence C.

发明人： GUNN III, Lawrence, C. ,  CAPELLINI, Giovanni ,  RATTIER, Maxime, J. ,  PINGUET, Thierry, J.

IPC分类号： H01L21/8238 ,  H01L21/20 ,  H01L21/205 ,  H01L27/144

CPC分类号： H01L21/823878 ,  H01L21/8238 ,  Y10S438/958

摘要： Methods for deposition of a Ge layer during a CMOS process on a monolithic device are disclosed. The insertion of the Ge layer enables the conversion of light to electrical signals easily. As a result of this method, standard metals can be attached directly to the Ge in completing an electrical circuit. Vias can also be used to connect to the Ge layer. In a first aspect of the invention, a method comprises the step of incorporating the deposition of Ge at multiple temperatures in a standard CMOS process. In a second aspect of the invention, a method comprises the step of incorporating the deposition of poly-Ge growth in a standard CMOS process.

公开(公告)号：EP2685298B1

公开(公告)日：2018-02-21

申请号：EP13175823.7

申请日：2013-07-09

申请人： Luxtera, Inc.

发明人： Verslegers, Lieven ,  Mekis, Attila

IPC分类号： G02B6/34 ,  G02B6/124

CPC分类号： G02B6/26 ,  G02B5/1861 ,  G02B6/124 ,  G02B6/126 ,  G02B6/30 ,  G02B6/34 ,  G02B6/4214 ,  G02B2006/12107 ,  G02B2006/12147 ,  G02B2006/1215

摘要： Methods and systems for grating couplers (117A-117H) incorporating perturbed waveguides are disclosed and may include in a semiconductor photonics die (130), communicating optical signals into and/or out of the die utilizing a grating coupler (117A-117H) on the die, where the grating coupler comprises perturbed waveguides. The perturbed waveguides may comprise a variable width along their length. The grating coupler may comprise a single polarization grating coupler comprising perturbed waveguides and a non-perturbed grating. The grating coupler may comprise a polarization splitting grating coupler (PSGC) (403)that includes two sets of perturbed waveguides at a non-zero angle, or a plurality of non-linear rows of discrete shapes. The PSGC may comprise discrete scatterers (805) at an intersection of the sets of perturbed waveguides. The grating couplers may be etched in a silicon layer on the semiconductor photonics die or deposited on the semiconductor photonics die. The grating coupler may comprise individual scatterers (805) between the perturbed waveguides.

公开(公告)号：EP2447751B1

公开(公告)日：2016-11-02

申请号：EP11187269.3

申请日：2004-02-11

申请人： Luxtera, Inc.

发明人： Gunn, Lawrence, C., III ,  Pinguet, Thierry, J. ,  Rattier, Maxime, J.

IPC分类号： G02B6/34

CPC分类号： G02B6/30 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/124 ,  G02B6/132 ,  G02B6/136 ,  G02B6/2852 ,  G02B6/305 ,  G02B2006/12097

公开(公告)号：EP3046275A1

公开(公告)日：2016-07-20

申请号：EP16151742.0

申请日：2016-01-18

申请人： Luxtera, Inc.

发明人： Welch, Brian ,  Xu, Kevin

IPC分类号： H04B10/524 ,  H04B10/54 ,  H04B10/50

CPC分类号： H04B10/516 ,  H04B10/5055 ,  H04B10/524 ,  H04B10/541

摘要： Methods and systems for a distributed optical transmitter with local domain splitting is disclosed and may include, in an optical modulator integrated in a silicon photonics chip: receiving electrical signals, communicating the electrical signals to domain splitters along a length of waveguides of the optical modulator utilizing one or more delay lines, generating electrical signals in voltage domains utilizing the domain splitters, modulating received optical signals in the waveguides of the optical modulator by driving diodes with the electrical signals generated in the voltage domains, and generating a modulated output signal through interference of the modulated optical signal in the waveguides of the optical modulator. The delay lines may comprise one delay element per domain splitter, or may comprise a delay element per domain splitter for a first subset of the domain splitters and more than one delay element per domain splitter for a second subset of the domain splitters.

摘要翻译： 公开了具有局域分解的分布式光发射机的方法和系统，并且可以包括在集成在硅光子芯片中的光学调制器中：接收电信号，沿着光调制器的波导长度将电信号传送到畴分离器，利用 一个或多个延迟线，利用区域分离器在电压域中产生电信号，通过在电压域中产生的电信号驱动二极管来调制光调制器的波导中的接收光信号，并通过干扰产生调制输出信号 在光调制器的波导中的调制光信号。 延迟线可以包括每个分离器的一个延迟元件，或者可以包括用于域分离器的第一子集的每个域分离器的延迟元件以及用于域分割器的第二子集的每个域分离器的多于一个延迟元件。