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    Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays
    24.
    发明公开
    Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays 审中-公开
    结构形成用电子束或EUV射线显影的有机溶剂或用于多重显影的方法

    公开(公告)号：EP2746853A3

    公开(公告)日：2014-09-24

    申请号：EP13199335.4

    申请日：2010-02-19

    申请人： Fujifilm Corporation

    发明人： Tsubaki, Hideaki ,  Shirakawa, Koji ,  Tsuchihashi, Toru

    IPC分类号： G03F7/32 ,  G03F7/038 ,  H01L21/027 ,  G03F7/039

    摘要： Provided is a pattern-forming method including, in the following order: (1) a process of forming a film with an actinic ray-sensitive or radiation-sensitive resin composition comprising a resin which contains an acid-decomposable repeating unit and is capable of decreasing the solubility in an organic solvent by the action of an acid; (2) a process of exposing the film with an electron beam or an EUV ray; and (4) a process of developing the film with a developer containing an organic solvent, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises:
    (A) the resin containing an acid-decomposable repeating unit and being capable of decreasing the solubility in an organic solvent by the action of an acid;
    (B) a compound generating an acid upon irradiation with an actinic ray or radiation; and
    (C) a solvent; and
    resin (A) is (Ai) a resin having a lactone group and containing a repeating unit represented by the following formula (1), or (Aii) a resin containing a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or cyano group and a repeating unit represented by the following formula (1):

    wherein A represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, or a cyano group; R represents a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkenyl group, an aralkyl group, an alkoxy group, an alkylcarbonyloxy group, an alkylsulfonyloxy group, an alkyloxycarbonyl group or an aryloxycarbonyl group, and when two or more R's are present, each R may be the same as or different from every other R or when two or more R's are present, they may form a ring in combination with each other; a represents an integer of 1 to 3; and b represents an integer of 0 to (3-a).

    Pattern forming method
    25.
    发明授权
    Pattern forming method 有权
    结构形成过程

    公开(公告)号：EP2535771B1

    公开(公告)日：2013-12-18

    申请号：EP12183679.5

    申请日：2007-12-21

    申请人： Fujifilm Corporation

    发明人： Tsubaki, Hideaki ,  Kanna, Shinichi

    IPC分类号： G03F7/32 ,  G03F7/20

    CPC分类号： G03F7/325 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  Y10T428/24802

    摘要： The present invention is directed to a pattern forming method, comprising: applying, to a substrate, a resist composition of which solubility in a positive developer which is an alkali developer increases and solubility in a negative developer containing an organic solvent decreases upon irradiation with actinic rays or radiation, so as to form a resist film; exposing the resist film; and developing the resist film with the negative developer, wherein the resist composition contains a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure and being capable of increasing a solubility of the resin in an alkali developer and decreasing a solubility of the resin in an organic solvent under an action of an acid, and the resin contains at least one member selected from the group consisting of a repeating unit having an alicyclic hydrocarbon-containing partial structure represented by any one of the following formulae (pI) to (pV): in formulae (pI) to (pV), R 11 represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group; Z represents an atomic group necessary for forming a cycloalkyl group together with the carbon atom; R 12 to R 16 each independently represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 12 to R 14 or either one of R 15 and R 16 represents a cycloalkyl group; R 17 to R 21 each independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 17 to R 21 represents a cycloalkyl group and that either one of R 19 and R 21 represents a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group; R 22 to R 25 each independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 4 or a cycloalkyl group, provided that at least one of R 22 to R 25 represents a cycloalkyl group; and R 23 and R 24 may combine with each other to form a ring.

    Pattern forming method
    30.
    发明公开
    Pattern forming method 有权
    图案形成方法

    公开(公告)号：EP2413194A3

    公开(公告)日：2012-02-08

    申请号：EP11186305.6

    申请日：2007-12-21

    申请人： Fujifilm Corporation

    发明人： Tsubaki, Hideaki ,  Kanna, Shinichi

    IPC分类号： G03F7/32 ,  G03F7/20

    CPC分类号： G03F7/325 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  Y10T428/24802

    摘要： The present invention relates to a pattern forming method, comprising:
    (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film;
    (B) exposing the resist film; and
    (D) developing the resist film with a negative developer,

    wherein (D) developing the resist film with a negative developer is performing development with a developer containing a solvent represented by formula (1) or a developer containing a solvent represented by formula (2):

    wherein R and R' each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxyl group, an alkoxycarbonyl group, a carboxyl group, a hydroxy group, a cyano group or a halogen atom, and R and R' may combine with each other to form a ring:

    wherein R" and R"" each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxyl group, an alkoxycarbonyl group, a carboxyl group, a hydroxyl group, a cyano group or a halogen atom, and R" and R"" may combine with each other to form a ring; and
    R'" represents an alkylene group or a cycloalkylene group.

    摘要翻译： 本发明涉及一种图案形成方法，其包括：（A）用正型抗蚀剂组合物涂布基底，所述正型抗蚀剂组合物在光化射线或辐射照射下其对正显影剂的溶解度增加并且在负显影剂中的溶解度降低，以形成 抗蚀剂膜; （B）暴露抗蚀剂膜; （D）用负显影剂显影抗蚀剂膜，其中（D）用负显影剂显影抗蚀剂膜用含有由式（1）表示的溶剂的显影剂或含有由式（1）表示的溶剂的显影剂进行显影 2）表示：其中R和R'各自独立地表示氢原子，烷基，环烷基，烷氧基，烷氧基羰基，羧基，羟基，氰基或卤素原子，并且R和 R'可以彼此结合形成环：其中R“和R”“各自独立地表示氢原子，烷基，环烷基，烷氧基，烷氧基羰基，羧基，羟基， 氰基或卤素原子，并且R“和R”“可以相互结合形成环; 和R“'代表亚烷基或亚环烷基。